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MBRS260T3G

Onsemi

MBRS260T3G by Onsemi

MBRS260T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.475V and output current of 2A. It operates b/w -55°C to 150°C, making it suitable for power applications. This single-configured diode comes in a small outline package with matte tin finish and dual terminals.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

42

In-Stock Inventory

1k+

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Mouser Electronics

USA . 52,949 parts In-Stock

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$0.560

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$0.218

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$0.146

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$0.560

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DigiKey

USA . 9,680 parts In-Stock

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$0.560

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$0.217

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$0.146

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$0.107

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$0.146

$0.107

Verical

USA . 100,000 parts In-Stock

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Rochester

USA . 100,000 parts In-Stock

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$0.107

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Future Electronics

Canada . 97,500 parts In-Stock

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Arrow

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Master Electronics

USA . 10,650 parts In-Stock

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Flip Electronics (Authorized)

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Element14

Singapore . 5,930 parts In-Stock

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Newark

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Chip1Stop

Japan . 2,495 parts In-Stock

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Nova Conductors

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Maritex

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Bristol Electronics

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TME

Poland . 4,285 parts In-Stock

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IBS Electronics

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NAC Semi

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Component Sense

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Modulus Dynamics

Lithuania . 10,497 parts In-Stock

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Ampacity Inc.

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Corphita

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Component Stockers USA

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Aztec Data Supply Inc.

USA . 4,725 parts In-Stock

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Advanced Electronics

New Zealand . 30 parts In-Stock

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Continental Prestige Electronics

USA . 5,295 parts In-Stock

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Argo Parts USA

USA . 1,932 parts In-Stock

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Netroflash

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Benley Electronics

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Perfect Parts

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

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Brazil . 16,156 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 6,334 parts In-Stock

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Kulean Microsystems

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iodParts Technologies Inc.

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Overview

Experience the superior quality and reliability of the MBRS260T3G diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that exceed expectations. This diode is perfect for power applications with its Schottky technology and high maximum output current of 2A. Its small outline package and dual terminal position make it versatile and easy to use. Trust Onsemi to provide you with a diode that offers excellent value, benefits, and advantages for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection for the diode, ensuring long-term reliability in various operating conditions.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, especially in compact electronic devices where space is limited.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising its performance, making it suitable for demanding environments.

Maximum Output Current: 2 A

The high maximum output current capability allows the diode to handle heavy loads, making it ideal for power applications.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop (0.475 V) and faster switching speed, improving overall efficiency and performance.

Technical Specifications

Diodes & Rectifiers MBRS260T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.475 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS260T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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