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BAV99S,115

NXP Semiconductors

BAV99S,115 by NXP Semiconductors

The NXP Semiconductors BAV99S,115 is a diode with 2 banks, series connected, center tap, and 2 elements. It has a max reverse recovery time of 0.004 us and a max forward voltage of 0.715 V. Ideal for rectification applications in electronics due to its small outline package style and high operating temperature range from -65 to 150 °C.

Median Price

$0.102

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1k+

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Mouser Electronics

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$0.310

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$0.117

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$0.076

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$0.045

482,936

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$0.117

$0.076

$0.045

DigiKey

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$0.310

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$0.117

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TTI

USA . 438,000 parts In-Stock

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EBV Elektronik

Germany . 246,000 parts In-Stock

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Future Electronics

Canada . 111,000 parts In-Stock

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RS (Exports)

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Farnell

UK . 33,590 parts In-Stock

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Element14

Singapore . 33,000 parts In-Stock

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Newark

USA . 27,000 parts In-Stock

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Elektronika Sales Private Limited

India . 21,000 parts In-Stock

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Verical

USA . 4,650 parts In-Stock

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Rochester

USA . 4,650 parts In-Stock

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$0.090

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Chip1Stop

Japan . 3,180 parts In-Stock

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Arrow

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Digiode

USA . 2,828 parts In-Stock

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EXC GmbH

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Nova Conductors

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Maritex

Poland . 13,120 parts In-Stock

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$0.064

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Bristol Electronics

USA . 1,810 parts In-Stock

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$0.225

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TME

Poland . 8 parts In-Stock

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$0.073

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8

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IBS Electronics

USA . 6,627,000 parts In-Stock

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NAC Semi

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Martec Srl

Italy . 1,755,000 parts In-Stock

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Micros

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Partservice

France . 18,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 18,000 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

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Connector Distribution Corp

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Right Parts Inc.

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Diverse Electronics

Canada . 300 parts In-Stock

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EPE Components Inc.

USA . 267 parts In-Stock

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ComSIT USA

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Prism Electronics

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Semicontronic

India . 1,413,664 parts In-Stock

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Ampacity Inc.

Singapore . 319,308 parts In-Stock

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Corphita

USA . 972 parts In-Stock

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Modulus Dynamics

Lithuania . 1,356 parts In-Stock

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AZTECH Wire

Italy . 13,212 parts In-Stock

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Argo Parts USA

USA . 3,899 parts In-Stock

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Bastille Electronics

Australia . 75 parts In-Stock

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Aztec Data Supply Inc.

USA . 150 parts In-Stock

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Corohmni

South Africa . 2,264 parts In-Stock

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Advanced Electronics

New Zealand . 62 parts In-Stock

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Eastek

USA . 660,000 parts In-Stock

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GreenTree Electronics

Israel . 143,000 parts In-Stock

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Perfect Parts

USA . 105,485 parts In-Stock

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Allen Electronics Distributors

USA . 92,800 parts In-Stock

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Lucentia Tech

USA . 31,892 parts In-Stock

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Kepictronics

USA . 31,536 parts In-Stock

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Continental Prestige Electronics

USA . 21,804 parts In-Stock

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Robosynatics

Brazil . 15,946 parts In-Stock

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Formix International (Excess)

India . 14,060 parts In-Stock

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Futuretech Components

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Supply Digital

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Overview

Unlock the power of cutting-edge technology with the NXP Semiconductors BAV99S,115 diode. Crafted with precision and expertise, this high-quality component offers unparalleled performance and reliability. Ideal for a variety of applications, this diode delivers exceptional value and efficiency to customers seeking top-notch electronic solutions. Experience the difference with NXP Semiconductors - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the diodes and ensures durability.

Config: 2 BANKS, SERIES CONNECTED

This configuration allows for efficient voltage regulation and increased performance.

Surface Mount: YES

The surface mount design makes installation easy and saves space on the circuit board.

Maximum Reverse Recovery Time: 0.004 us

The quick reverse recovery time helps improve overall efficiency of the product.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures minimal power loss and higher efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on the circuit board.

Reverse Test Voltage: 80 V

High reverse test voltage ensures reliable performance under varying conditions.

No. of Terminals: 6

Multiple terminals provide flexibility in wiring and connection options.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes it suitable for compact designs.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments.

Minimum Operating Temperature: -65 °C

Low operating temperature ensures performance even in extreme cold conditions.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position provides flexibility in installation and connection options.

Maximum Power Dissipation: 0.25 W

High power dissipation capability makes it suitable for demanding applications.

Maximum Time At Peak Reflow Temperature: 30s

Allows for safe and efficient reflow soldering during installation process.

Peak Reflow Temperature: 260 °C

High peak reflow temperature ensures reliable solder joints during installation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC current in various electronic applications.

Maximum Forward Voltage (VF): 0.715 V

Low forward voltage drop ensures minimal power loss and high efficiency.

Maximum Output Current: 0.2 A

High output current rating allows for use in various electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form provides secure connection and ease of soldering.

No. of Elements: 4

Multiple elements allow for efficient current flow and increased performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage ensures reliable performance under varying conditions.

Maximum Non Repetitive Peak Forward Current: 4 A

High peak forward current rating makes it suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diode element material provides high efficiency and reliability in operation.

Technical Specifications

Diodes & Rectifiers BAV99S,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV99S,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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