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Photovoltaic Cells

Photovoltaic cells, also known as solar cells, are electronic devices that convert sunlight into electricity. They are made from semiconductor materials, such as silicon, and are widely used in a variety of applications, including in solar panels, calculators, and remote sensors.

Photovoltaic cells work by using the energy from photons in sunlight to create an electric current. When light hits the photovoltaic cell, it causes electrons in the semiconductor material to be released, creating an electric current. This current can be used to power electronic devices or stored in batteries for later use.

One of the advantages of photovoltaic cells is their ability to produce electricity without any moving parts or emissions. They are a clean and renewable source of energy and do not produce any greenhouse gases or other harmful pollutants.

Another advantage of photovoltaic cells is their versatility. They can be used in a wide range of applications, from powering small electronic devices to providing electricity for homes and businesses.

One of the disadvantages of photovoltaic cells is their relatively low efficiency compared to other types of energy sources. They are not able to convert all of the energy from sunlight into electricity and require large surface areas to generate significant amounts of power.

Photovoltaic Cells

Available Parts 38

Part RoHS Manufacturer Description Optoelectronic Type Mounting Feature Terminal Finish Peak Wavelength (nm) Semiconductor Material Maximum Operating Temperature Minimum Operating Temperature Active Area JESD-609 Code Output Voltage (Open Circuit)
CM6-5 by New England Semiconductor

CM6-5

New England Semiconductor

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

BM1-5 by New England Semiconductor

BM1-5

New England Semiconductor

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

PDV-P5001 by Luna Innovations

PDV-P5001

Luna Innovations

Photovoltaic Cells;

FM2-5 by New England Semiconductor

FM2-5

New England Semiconductor

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

PDV-P8103 by Luna Innovations

PDV-P8103

Luna Innovations

Photovoltaic Cells;

PDV-P8104 by Luna Innovations

PDV-P8104

Luna Innovations

Photovoltaic Cells;

CPC1824N by IXYS Corporation

CPC1824N

IXYS Corporation

PHOTOVOLTAIC SOLAR CELL;

PHOTOVOLTAIC SOLAR CELL

SLMD121H08L by IXYS Corporation

SLMD121H08L

IXYS Corporation

PHOTOVOLTAIC SOLAR CELL;

PHOTOVOLTAIC SOLAR CELL

D3-8 by New England Semiconductor

D3-8

New England Semiconductor

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

CPC1831N by Ixys Integrated Circuits Division

CPC1831N

Ixys Integrated Circuits Division

Photovoltaic Cells;

KXOB22-12X1F by IXYS Corporation

KXOB22-12X1F

IXYS Corporation

PHOTOVOLTAIC SOLAR CELL;

PHOTOVOLTAIC SOLAR CELL

105407779 by Onsemi

105407779

Onsemi

PHOTOVOLTAIC CELL FOR INFRARED DETECTION; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 850; Minimum Operating Temperature: -65 Cel; Active Area: 154 sq mils; Maximum Operating Temperature: 125 Cel;

PHOTOVOLTAIC CELL FOR INFRARED DETECTION

SURFACE MOUNT

850

125 Cel

-65 Cel

154 sq mils

100951280 by Infineon Technologies

100951280

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 0.5 sq cm; Peak Wavelength (nm): 900; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .55 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.5 sq cm

.55 V

100951187 by Infineon Technologies

100951187

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Output Voltage (Open Circuit): 280 V; Semiconductor Material: SILICON; Maximum Operating Temperature: 100 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

5.9 x 12.3 mm

280 V

100951189 by Infineon Technologies

100951189

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): 280 V; Minimum Operating Temperature: -55 Cel; Active Area: 5.9 x 5.9 mm; Peak Wavelength (nm): 850;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

5.9 x 5.9 mm

280 V

100951989 by Infineon Technologies

100951989

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Active Area: 1.3 sq cm; Output Voltage (Open Circuit): 250 V; Peak Wavelength (nm): 850;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

1.3 sq cm

250 V

100952005 by Infineon Technologies

100952005

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .55 V; Active Area: 1.8 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

1.8 sq cm

.55 V

100951317 by Infineon Technologies

100951317

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 0.9 sq cm; Output Voltage (Open Circuit): .47 V; Peak Wavelength (nm): 555; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

0.9 sq cm

.47 V

100951987 by Infineon Technologies

100951987

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 1.3 x 1.3 mm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Output Voltage (Open Circuit): 250 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

85 Cel

-40 Cel

1.3 x 1.3 mm

250 V

BPY48P by Infineon Technologies

BPY48P

Infineon Technologies

PHOTOVOLTAIC CELL FOR INFRARED DETECTION; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;

PHOTOVOLTAIC CELL FOR INFRARED DETECTION

Tin/Lead (Sn/Pb)

e0

100951175 by Infineon Technologies

100951175

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Active Area: 7.6 x 7.6 mm; Output Voltage (Open Circuit): 260 V; Maximum Operating Temperature: 100 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

7.6 x 7.6 mm

260 V

100951188 by Infineon Technologies

100951188

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Output Voltage (Open Circuit): 280 V; Minimum Operating Temperature: -55 Cel; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

9.7 x 9.7 mm

280 V

100952009 by Infineon Technologies

100952009

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 0.1 sq cm; Peak Wavelength (nm): 900; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .55 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.1 sq cm

.55 V

100951274 by Infineon Technologies

100951274

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .55 V; Peak Wavelength (nm): 900; Active Area: 0.2 sq cm; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.2 sq cm

.55 V

100951305 by Infineon Technologies

100951305

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .47 V; Semiconductor Material: SILICON; Peak Wavelength (nm): 555; Active Area: 0.1 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

0.1 sq cm

.47 V

100951272 by Infineon Technologies

100951272

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: SILICON; Active Area: 0.1 sq cm; Peak Wavelength (nm): 900; Output Voltage (Open Circuit): .55 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.1 sq cm

.55 V

100951994 by Infineon Technologies

100951994

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .55 V; Semiconductor Material: SILICON; Peak Wavelength (nm): 900; Active Area: 0.2 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.2 sq cm

.55 V

100951173 by Infineon Technologies

100951173

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): 310 V; Semiconductor Material: SILICON; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

800

SILICON

100 Cel

-55 Cel

4.5 x 4.5 mm

310 V

100951322 by Infineon Technologies

100951322

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 555; Output Voltage (Open Circuit): .47 V; Active Area: 0.1 sq cm; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

0.1 sq cm

.47 V

100951308 by Infineon Technologies

100951308

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 555; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .47 V; Active Area: 0.2 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

0.2 sq cm

.47 V

100951186 by Infineon Technologies

100951186

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Semiconductor Material: SILICON; Output Voltage (Open Circuit): 280 V; Active Area: 9.7 x 19.7 mm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

9.7 x 19.7 mm

280 V

100951180 by Infineon Technologies

100951180

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: SILICON; Peak Wavelength (nm): 850; Minimum Operating Temperature: -55 Cel; Output Voltage (Open Circuit): 260 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

1.9 x 4.5 mm

260 V

100951319 by Infineon Technologies

100951319

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 555; Semiconductor Material: SILICON; Active Area: 1.8 sq cm; Output Voltage (Open Circuit): .47 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

1.8 sq cm

.47 V

100952003 by Infineon Technologies

100952003

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Active Area: 0.9 sq cm; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .55 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.9 sq cm

.55 V

100951324 by Infineon Technologies

100951324

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .47 V; Semiconductor Material: SILICON; Peak Wavelength (nm): 555; Active Area: 0.5 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

555

SILICON

0.5 sq cm

.47 V

100952007 by Infineon Technologies

100952007

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Active Area: 0.018 sq cm; Output Voltage (Open Circuit): .55 V; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.018 sq cm

.55 V

100952011 by Infineon Technologies

100952011

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 0.5 sq cm; Peak Wavelength (nm): 900; Output Voltage (Open Circuit): .55 V; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

900

SILICON

0.5 sq cm

.55 V

100951181 by Infineon Technologies

100951181

Infineon Technologies

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Output Voltage (Open Circuit): 260 V; Peak Wavelength (nm): 850; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL

THROUGH HOLE MOUNT

850

SILICON

100 Cel

-55 Cel

1.9 x 4.5 mm

260 V