Loading...

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,400+

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard
MMBT3904LT1G by Onsemi

MMBT3904LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.3 W

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

40 V

35 ns

-55 Cel

285 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

MMBT2907ALT1G by Onsemi

MMBT2907ALT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

PNP

SINGLE

YES

200 MHz

.225 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

45 ns

-55 Cel

100 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2N2222A by Texas Instruments

2N2222A

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN

SINGLE

NO

300 MHz

.5 W

.8 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

175 Cel

SILICON

40 V

35 ns

-65 Cel

285 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

ULN2003ADR by Texas Instruments

ULN2003ADR

Texas Instruments

NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V; Package Body Material: PLASTIC/EPOXY;

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AC

e3

NOT SPECIFIED

260

MMBT3906LT1G by Onsemi

MMBT3906LT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

PNP

SINGLE

YES

250 MHz

.3 W

.2 A

PLASTIC/EPOXY

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

4.5 pF

SILICON

40 V

70 ns

-65 Cel

300 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

SMMBT3904LT1G by Onsemi

SMMBT3904LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.3 W

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

SMMBT2222ALT1G by Onsemi

SMMBT2222ALT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

AEC-Q101

MMBT3904-7-F by Diodes Incorporated

MMBT3904-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

4 pF

SILICON

40 V

70 ns

-55 Cel

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

AEC-Q101

SMMBT2907ALT1G by Onsemi

SMMBT2907ALT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

PNP

SINGLE

YES

200 MHz

.3 W

.6 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

45 ns

100 ns

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

BC817,215 by NXP Semiconductors

BC817,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2N2222AUB by Microchip Technology

2N2222AUB

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

NPN

SINGLE

YES

.5 W

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

200 Cel

SILICON

50 V

35 ns

-65 Cel

300 ns

TIN LEAD

DUAL

R-CDSO-N3

Not Qualified

e0

MIL-19500/255

MMBTA42LT1G by Onsemi

MMBTA42LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

50 MHz

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

300 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

NO

200 MHz

.625 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

e0

2N3904 by Texas Instruments

2N3904

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

NO

300 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

70

150 Cel

SILICON

40 V

70 ns

250 ns

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

MMBT3904 by Onsemi

MMBT3904

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.225 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

250 ns

TIN

DUAL

R-PDSO-G3

1

COLLECTOR

Not Qualified

TO-236AB

e3

30

260

SMBTA42E6327HTSA1 by Infineon Technologies

SMBTA42E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

300 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

2N6517BU by Onsemi

2N6517BU

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

350 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MMBT3906-7-F by Diodes Incorporated

MMBT3906-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

PNP

SINGLE

YES

250 MHz

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

300 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

JANTX2N2222AUBT/R by Microchip Technology

JANTX2N2222AUBT/R

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDSO-N3; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN

SINGLE

YES

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

35 ns

300 ns

DUAL

R-CDSO-N3

MIL-19500/255

MMBT2222A-7-F by Diodes Incorporated

MMBT2222A-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

AEC-Q101

ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 1000; Qualification: Not Qualified;

NPN

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

8

18

SMALL OUTLINE

1000

SILICON

50 V

DUAL

R-PDSO-G18

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .0005 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;

NPN

YES

100 MHz

.0005 W

.5 A

Other Transistors

100

150 Cel

MATTE TIN

1

e3

30

260

SMMBT3906LT1G by Onsemi

SMMBT3906LT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

PNP

SINGLE

YES

250 MHz

.3 W

.2 A

PLASTIC/EPOXY

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

4.5 pF

SILICON

40 V

70 ns

-65 Cel

300 ns

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

MMBT3904TT1G by Onsemi

MMBT3904TT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.15 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MMBT3904,215 by NXP Semiconductors

MMBT3904,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.25 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

250 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2N2222AUA by Microchip Technology

2N2222AUA

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;

NPN

SINGLE

YES

.65 W

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

30

200 Cel

SILICON

50 V

35 ns

300 ns

TIN LEAD

DUAL

R-CDSO-N4

Not Qualified

e0

PIMN31,115 by NXP Semiconductors

PIMN31,115

NXP Semiconductors

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Collector Current (IC): .5 A; No. of Terminals: 6;

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.42 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

70

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

BC846BLT1G by Onsemi

BC846BLT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

4.5 pF

SILICON

65 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

PN2222ABU by Onsemi

PN2222ABU

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

NO

300 MHz

.625 W

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

SBC817-40LT1G by Onsemi

SBC817-40LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

BC817-25W,115 by NXP Semiconductors

BC817-25W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.2 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

5 pF

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MMBT3904T-7-F by Diodes Incorporated

MMBT3904T-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.15 W

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC817-40,215 by NXP Semiconductors

BC817-40,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC547CG by Onsemi

BC547CG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

420

150 Cel

SILICON

45 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MMBT3904WT1G by Onsemi

MMBT3904WT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

300 MHz

.15 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

JANTX2N2222AUA/TR by Microchip Technology

JANTX2N2222AUA/TR

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;

NPN

SINGLE

YES

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

4

SMALL OUTLINE

30

SILICON

50 V

35 ns

300 ns

DUAL

R-CDSO-N4

MIL-19500/255

MMBT2907A-7-F by Diodes Incorporated

MMBT2907A-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

PNP

SINGLE

YES

200 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

60 V

45 ns

-55 Cel

100 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

AEC-Q101

SMMBT4401LT1G by Onsemi

SMMBT4401LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

250 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

255 ns

35 ns

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

AEC-Q101

BC847-B by Infineon Technologies

BC847-B

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

MMBT4401LT1G by Onsemi

MMBT4401LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

250 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

.75 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.225 W

40

150 Cel

6.5 pF

SILICON

40 V

255 ns

-55 Cel

35 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT5551LT1G by Onsemi

MMBT5551LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .06 A; Maximum VCEsat: .2 V;

NPN

SINGLE

YES

.3 W

.06 A

PLASTIC/EPOXY

SWITCHING

.2 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

160 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT2222AWT1G by Onsemi

MMBT2222AWT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

300 MHz

.15 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC847B,215 by NXP Semiconductors

BC847B,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

COLLECTOR

Not Qualified

TO-236AB

e3

30

260

IEC-60134

MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

YES

100 MHz

.225 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

80 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

MMBT2222A,215 by NXP Semiconductors

MMBT2222A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

250 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMUN2211LT1G by Onsemi

MMUN2211LT1G

Onsemi

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

35

150 Cel

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

40

260