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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC817-16W-QX by Nexperia

BC817-16W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-40W-QF by Nexperia

BC807-40W-QF

Nexperia

BC807-40W-QF by Nexperia is a PNP BJT for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max temp of 150°C, it has a fT of 80MHz. Ideal for small outline packages in automotive electronics.

.5 A

5 pF

45 V

SINGLE

250

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC856S-QF by Nexperia

BC856S-QF

Nexperia

BC856S-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. This small outline transistor features a Gull Wing terminal form in a rectangular package shape.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC847BPN-QZ by Nexperia

BC847BPN-QZ

Nexperia

BC847BPN-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, Gull Wing terminals, and operates at -65 to 150°C. Ideal for switching applications, it offers VCEsat of 0.3V, hFE of 200, and fT of 100MHz in a small outline package.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC856S-QH by Nexperia

BC856S-QH

Nexperia

BC856S-QH by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. With a compact small outline package style, it features dual terminals in gull wing form.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

PMBTA06-QVL by Nexperia

PMBTA06-QVL

Nexperia

Nexperia's PMBTA06-QVL is a NPN BJT transistor for switching applications. Features include VCEsat of 0.25V, hFE of 100, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 standards.

.5 A

80 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.25 V

PUMD9-QZ by Nexperia

PUMD9-QZ

Nexperia

PUMD9-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 100, and max operating temp of 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design for various electronic circuits.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QH by Nexperia

PUMH9-QH

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QF by Nexperia

PUMH9-QF

Nexperia

PUMH9-QF by Nexperia is a NPN BJT transistor with 2 elements and built-in resistor for switching applications. It features a max VCEsat of 0.1V, hFE of 100, and can handle a max collector-emitter voltage of 50V. This small outline transistor operates b/w -55 to 150 °C and has a nominal transition frequency of 230 MHz.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QZ by Nexperia

PUMH9-QZ

Nexperia

Nexperia's PUMH9-QZ is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.1V, hFE of 100, and fT of 230MHz. With max ratings at 50V/0.1A, it operates from -55 to 150°C in small outline package for automotive (AEC-Q101) and general use (IEC-60134).

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMB11-QX by Nexperia

PUMB11-QX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.1 V

PUMH10-QX by Nexperia

PUMH10-QX

Nexperia

The Nexperia PUMH10-QX is a NPN BJT with 2 elements, built-in resistor for switching applications. It has VCEsat of 0.1V, hFE of 100, and operates up to 150°C. With a max fT of 230MHz, it's ideal for AEC-Q101 automotive standards in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

BC807-QR by Nexperia

BC807-QR

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-16-QR by Nexperia

BC807-16-QR

Nexperia

BC807-16-QR by Nexperia is a PNP BJT for switching applications. Features include VCEsat of 0.7V, hFE of 100, and IC of 0.5A. Suitable for small outline packages, with max operating temp of 150°C.

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-25-QVL by Nexperia

BC807-25-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-16-QVL by Nexperia

BC807-16-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC846BS-QF by Nexperia

BC846BS-QF

Nexperia

BC846BS-QF by Nexperia is a NPN BJT for switching applications. Features include VCEsat of 0.3V, hFE of 200, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for compact designs requiring high-speed switching capabilities.

.1 A

1.9 pF

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC857BW-QF by Nexperia

BC857BW-QF

Nexperia

BC857BW-QF by Nexperia is a PNP BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 220, and IC of 0.1A. With a max operating temp of 150°C, it's ideal for small outline packages in automotive electronics.

.1 A

3 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

BC846S-QZ by Nexperia

BC846S-QZ

Nexperia

BC846S-QZ by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QX by Nexperia

BC846S-QX

Nexperia

BC846S-QX by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz making it ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QF by Nexperia

BC846S-QF

Nexperia

BC846S-QF by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and fT of 100MHz. With max ratings of 65V VCEO and 0.1A IC, it operates b/w -65 to 150°C.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QH by Nexperia

BC846S-QH

Nexperia

BC846S-QH by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.3V, min hFE of 110, and max IC of 0.1A. With a package style of small outline and dual terminal position, it operates b/w -65 to 150°C and has a fT of 100MHz.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

PUMD10-QH by Nexperia

PUMD10-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD10-QF by Nexperia

PUMD10-QF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QZ by Nexperia

PUMD48-QZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QH by Nexperia

PUMD48-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QX by Nexperia

PUMD48-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PDTC124ET-QVL by Nexperia

PDTC124ET-QVL

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

BC858W-QF by Nexperia

BC858W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

30 V

SINGLE

125

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

BC858W-QX by Nexperia

BC858W-QX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

30 V

SINGLE

125

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

2SA1774E3HZGTLQ by ROHM

2SA1774E3HZGTLQ

ROHM

ROHM 2SA1774E3HZGTLQ is a PNP BJT transistor with VCEsat of 0.5V, hFE of 120, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. AEC-Q101 compliant, suitable for automotive electronics requiring high reliability.

.15 A

5 pF

50 V

SINGLE

120

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101

YES

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V

ADTC144VCAQ-7 by Diodes Incorporated

ADTC144VCAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SILICON

250 MHz

2SC2859-Y(TE85L,F) by Toshiba

2SC2859-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

7 pF

30 V

SINGLE

40

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

.15 W

YES

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

.25 V