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BC856S-QF

Nexperia

BC856S-QF by Nexperia

BC856S-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. This small outline transistor features a Gull Wing terminal form in a rectangular package shape.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 30,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 119,000 parts In-Stock

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VNN

France . 6,504 parts In-Stock

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Vyrian

USA . 5,042 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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$0.054

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Argo Parts USA

USA . 4,093 parts In-Stock

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Continental Prestige Electronics

USA . 2,423 parts In-Stock

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$0.057

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Corohmni

South Africa . 329 parts In-Stock

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$0.646

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Aztec Data Supply Inc.

USA . 848 parts In-Stock

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$1.448

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$1.448

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AZTECH Wire

Italy . 11,071 parts In-Stock

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$14.460

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Ampacity Inc.

Singapore . 919 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Overview

Discover the BC856S-QF by Nexperia, a high-quality small signal bipolar junction transistor designed for switching applications. Manufactured with precision and expertise, this PNP transistor offers customers exceptional value with its low VCEsat of 0.3 V and maximum power dissipation of 0.4 W. With a minimum DC current gain of 110, this transistor provides reliable performance in a variety of electronic circuits. Trust Nexperia for top-notch components that deliver superior results and unmatched efficiency. Upgrade your projects with the BC856S-QF and experience the benefits of quality engineering at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SEPARATE, 2 ELEMENTS

Allows for flexibility in circuit design and can be used for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation onto circuit boards, saving space and simplifying assembly processes.

Maximum VCEsat: 0.3 V

Low VCEsat helps minimize power losses and improves efficiency in switching circuits.

No. of Elements: 2

Having 2 elements allows for more complex circuit designs and functionalities.

Maximum Collector-Emitter Voltage: 65 V

Can handle relatively high voltages, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Capable of operating in low temperature environments, expanding its potential use cases.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for small signal applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC856S-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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