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PMBT2222A,215

NXP Semiconductors

PMBT2222A,215 by NXP Semiconductors

The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.

Median Price

$0.042

Lifecycle Status

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45

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1k+

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TTI

USA . 1,743,000 parts In-Stock

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Elektronika Sales Private Limited

India . 917,000 parts In-Stock

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Verical

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EBV Elektronik

Germany . 279,000 parts In-Stock

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Farnell

UK . 87,042 parts In-Stock

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UK . 38,700 parts In-Stock

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Chip1Stop

Japan . 8,514 parts In-Stock

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DF Sales Co.

USA . 7,158 parts In-Stock

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USA . 7,158 parts In-Stock

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Maritex

Poland . 92,998 parts In-Stock

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Digiode

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Component Electronics Inc.

Canada . 200 parts In-Stock

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Nova Conductors

Japan . 49 parts In-Stock

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Sensible Micro Corp

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NAC Semi

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Component Sense

UK . 222,656 parts In-Stock

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Cyclops Electronics Ltd

UK . 156,768 parts In-Stock

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LIBRA Elektronik GmbH

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Ampacity Inc.

Singapore . 1,212,626 parts In-Stock

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India . 2,400,779 parts In-Stock

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Argo Parts USA

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AZTECH Wire

Italy . 12,560 parts In-Stock

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Corphita

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South Africa . 1,120 parts In-Stock

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Advanced Electronics

New Zealand . 140 parts In-Stock

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Aztec Data Supply Inc.

USA . 208 parts In-Stock

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Modulus Dynamics

Lithuania . 25,774 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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Eastek

USA . 648,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 141,608 parts In-Stock

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GreenTree Electronics

Israel . 131,477 parts In-Stock

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USA . 115,393 parts In-Stock

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Glotronic Ltd.

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iodParts Technologies Inc.

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Lucentia Tech

USA . 25,626 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,642 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Supply Digital

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USA . 1,000 parts In-Stock

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Overview

Unlock the power of innovation with the NXP Semiconductors PMBT2222A,215 small signal bipolar junction transistor. Designed for switching applications, this NPN transistor offers reliable performance and efficiency in a compact package. With a maximum VCEsat of just 1V and a minimum DC current gain of 40, this transistor delivers exceptional value while operating at temperatures up to 150°C. Whether you're working on consumer electronics, automotive systems, or industrial controls, the PMBT2222A,215 provides the quality and reliability you need for your next project. Experience the advantages of NXP Semiconductors technology and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for a variety of electronic circuits.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate this transistor into the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in high-speed circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Maximum VCEsat: 1 V

Low VCEsat results in minimal voltage drop across the transistor, leading to improved efficiency and reduced power dissipation.

Package Shape: RECTANGULAR

Rectangular shape simplifies the placement and orientation of the transistor on the PCB, optimizing space utilization in electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and easy soldering, ensuring reliable electrical contact in electronic assemblies.

No. of Terminals: 3

Having 3 terminals allows for versatile connections and compatibility with various circuit configurations, increasing design flexibility.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels without overheating or failure.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and reduces the overall footprint of the electronic device, ideal for compact designs.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification and signal processing in electronic circuits, enhancing overall performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows this transistor to withstand harsh environmental conditions and ensures stable operation in a wide range of applications.

Maximum Collector-Base Capacitance: 8 pF

Low collector-base capacitance minimizes the risk of parasitic effects in high-frequency circuits, improving signal integrity and accuracy.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40 V, this transistor can handle high voltage levels and ensures reliable performance in various power supply applications.

Transistor Element Material: SILICON

Silicon-based transistors provide high performance, reliability, and efficiency in electronic circuits, making this product a preferred choice for many applications.

Maximum Turn On Time (ton): 35 ns

Fast turn on time of 35 ns enables quick switching transitions, reducing signal delay and improving the overall response time of the circuit.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures from -65°C ensures reliable performance in extreme cold conditions, making this transistor suitable for various environments.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor is capable of handling moderate current levels in electronic circuits, enabling efficient power delivery.

Maximum Turn Off Time (toff): 250 ns

Fast turn off time of 250 ns allows for quick switching transitions and minimizes the risk of signal distortion, ensuring accurate performance in high-speed applications.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability and corrosion resistance, ensuring stable electrical connections over the long term.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible PCB mounting options, improving the overall ease of assembly and installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures proper soldering and prevents damage to the transistor during assembly, contributing to overall reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C enables efficient soldering and ensures strong mechanical bond between the transistor and the PCB, enhancing the overall durability.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency of 300 MHz indicates excellent high-frequency performance, making this transistor suitable for fast switching and signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PMBT2222A,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH CURRENT DRIVER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

PMBT2222A,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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