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PMBT2222A,235

NXP Semiconductors

PMBT2222A,235 by NXP Semiconductors

NXP Semiconductors' PMBT2222A,235 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, hFE of 40, and fT of 300MHz. With a max IC of 0.6A and operating temp range from -65 to 150 °C, it's ideal for small outline packages in surface mount configurations.

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$0.021

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Avnet

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Chip1Stop

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Rochester

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AZTECH Wire

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Overview

Enhance your electronic projects with the PMBT2222A,235 by NXP Semiconductors. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers exceptional switching capabilities in a compact package. Whether you're a hobbyist or a professional, this NPN transistor will provide reliable performance and precision. Ideal for a wide range of applications, from amplifiers to voltage regulators, this transistor is designed to meet your specific needs. Trust NXP Semiconductors for exceptional quality and innovation, and unlock endless possibilities with the PMBT2222A,235.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for a wide range of applications.

Polarity or Channel Type: NPN

NPN configuration allows for versatile switching applications and compatibility with various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient performance.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, making this transistor a convenient choice for mass production.

Maximum VCEsat: 1 V

Low maximum VCEsat value ensures minimal power loss, contributing to overall energy efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and space-saving designs, ideal for devices with limited space.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical support and easy soldering during assembly.

No. of Terminals: 3

With 3 terminals, this transistor offers simple connectivity and flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 0.25 W

The high maximum power dissipation ensures reliable operation and protects the transistor against overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes this transistor suitable for miniaturized electronic devices and applications.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 ensures consistent and stable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in extreme environments.

Maximum Collector-Base Capacitance: 8 pF

Low collector-base capacitance minimizes signal distortion and enhances the switching speed of the transistor.

Maximum Collector-Emitter Voltage: 40 V

A high maximum voltage rating provides an extra margin of safety and ensures reliability in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance, stability, and longevity of the transistor.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time enhances switching speed and efficiency in real-time applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for reliable operation in cold environments.

Maximum Collector Current (IC): 0.6 A

High maximum collector current rating allows for handling of moderate power loads with ease.

Maximum Turn Off Time (toff): 250 ns

Slow turn-off time enables better control and reduced switching noise in the transistor.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting orientation and ease of connectivity in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures consistent and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for robust assembly and solder joint reliability.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency enables high-speed signal processing and switching performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PMBT2222A,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH CURRENT DRIVER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

PMBT2222A,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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