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SBC817-40LT3G

Onsemi

SBC817-40LT3G by Onsemi

SBC817-40LT3G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. Suitable for surface mount designs with Gull Wing terminals in a small outline package.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 50,000 parts In-Stock

1+ parts

$0.163

100+ parts

$0.078

1k+ parts

$0.044

10k+ parts

$0.034

50,000

$0.163

$0.078

$0.044

$0.034

Mouser Electronics

USA . 1,816 parts In-Stock

1+ parts

$0.270

100+ parts

$0.100

1k+ parts

$0.060

10k+ parts

$0.047

1,816

$0.270

$0.100

$0.060

$0.047

Avnet

USA . 410,000 parts In-Stock

1+ parts

-

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-

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410,000

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-

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DigiKey

USA . 102,325 parts In-Stock

1+ parts

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$0.038

102,325

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$0.038

Rochester

USA . 90,430 parts In-Stock

1+ parts

-

100+ parts

$0.034

1k+ parts

$0.028

10k+ parts

$0.025

90,430

-

$0.034

$0.028

$0.025

Verical

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.044

10k+ parts

$0.034

50,000

-

-

$0.044

$0.034

Chip1Stop

Japan . 49,903 parts In-Stock

1+ parts

-

100+ parts

$0.151

1k+ parts

$0.150

10k+ parts

$0.149

49,903

-

$0.151

$0.150

$0.149

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 916 parts In-Stock

1+ parts

$0.023

100+ parts

-

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916

$0.023

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.061

100+ parts

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500

$0.061

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Vyrian

USA . 57,398 parts In-Stock

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57,398

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NAC Semi

USA . 20,000 parts In-Stock

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$0.054

20,000

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$0.054

Chip Stock

USA . 9,010 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Semicontronic

India . 57,591 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

1k+ parts

$0.019

10k+ parts

-

57,591

$0.020

$0.020

$0.019

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Ampacity Inc.

Singapore . 57,567 parts In-Stock

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$0.020

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57,567

$0.020

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Corphita

USA . 1,813 parts In-Stock

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$0.022

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1,813

$0.022

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Corohmni

South Africa . 184 parts In-Stock

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$0.024

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184

$0.024

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Argo Parts USA

USA . 820 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

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10k+ parts

$0.048

820

$0.049

-

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$0.048

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.061

100+ parts

-

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50

$0.061

-

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.394

100+ parts

$1.324

1k+ parts

$1.324

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40

$1.394

$1.324

$1.324

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Aztec Data Supply Inc.

USA . 4,663 parts In-Stock

1+ parts

$1.431

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4,663

$1.431

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Eastek

USA . 490,000 parts In-Stock

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$0.038

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$0.038

Authorized Procurement Solutions

USA . 440,000 parts In-Stock

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Perfect Parts

USA . 145,236 parts In-Stock

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Continental Prestige Electronics

USA . 94,187 parts In-Stock

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$0.033

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$0.033

QUARKTWIN TECHNOLOGY LTD

USA . 25,844 parts In-Stock

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Lixinc

USA . 14,721 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 8,280 parts In-Stock

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Kulean Microsystems

USA . 5,424 parts In-Stock

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Problanco Electronics

Mexico . 4,915 parts In-Stock

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SupplyDigital Components

Austria . 3,834 parts In-Stock

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TANS Electronics

Latvia . 1,956 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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Robosynatics

Brazil . 150 parts In-Stock

1+ parts

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$6.160

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$6.160

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$6.160

150

-

$6.160

$6.160

$6.160

Lucentia Tech

USA . 150 parts In-Stock

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$6.160

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$6.160

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$6.160

150

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$6.160

$6.160

$6.160

Overview

Discover the SBC817-40LT3G by Onsemi, a top-quality NPN small signal bipolar junction transistor perfect for switching applications. Manufactured by Onsemi, known for their high standards and reliability, this transistor offers customers exceptional value and benefits. Its compact design, with a maximum power dissipation of 0.3W and a minimum DC current gain of 250, makes it ideal for a wide range of electronic projects. Trust the SBC817-40LT3G to deliver superior performance and efficiency for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile.

Configuration: SINGLE

Simplified circuit design and easy to implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Suitable for automated assembly processes, saving time and labor costs.

Package Shape: RECTANGULAR

Efficient use of space on circuit boards.

Terminal Form: GULL WING

Easy to solder and provides good mechanical strength.

No. of Terminals: 3

Simple and straightforward connections.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels reliably.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Minimum DC Current Gain (hFE): 250

Ensures consistent and stable current amplification.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels without overheating.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and corrosion-resistant terminal finish.

Terminal Position: DUAL

Allows for versatile mounting and connection options.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand reflow soldering process without damage.

Peak Reflow Temperature °C: 260

High reflow temperature ensures secure solder joints.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC817-40LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBC817-40LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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