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SBC846BDW1T1G

Onsemi

SBC846BDW1T1G by Onsemi

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 14,255 parts In-Stock

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$0.258

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$0.098

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$0.063

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14,255

$0.258

$0.098

$0.063

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Mouser Electronics

USA . 24,292 parts In-Stock

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$0.270

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$0.101

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$0.066

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$0.051

24,292

$0.270

$0.101

$0.066

$0.051

DigiKey

USA . 339 parts In-Stock

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$0.270

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$0.101

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$0.065

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339

$0.270

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Avnet

USA . 5,589,000 parts In-Stock

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EBV Elektronik

Germany . 99,000 parts In-Stock

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Arrow

USA . 90,000 parts In-Stock

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Verical

USA . 90,000 parts In-Stock

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Farnell

UK . 38,360 parts In-Stock

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Element14

Singapore . 38,350 parts In-Stock

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Chip1Stop

Japan . 210 parts In-Stock

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$0.062

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Rochester

USA . 205 parts In-Stock

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$0.039

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205

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Distributors (In-Stock)

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Digiode

USA . 2,057 parts In-Stock

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$0.028

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TME

Poland . 565 parts In-Stock

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$0.160

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$0.068

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$0.046

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$0.037

565

$0.160

$0.068

$0.046

$0.037

Nova Conductors

Japan . 300 parts In-Stock

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$0.440

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300

$0.440

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Maritex

Poland . 1,285 parts In-Stock

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$0.642

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$0.124

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$0.071

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$0.061

1,285

$0.642

$0.124

$0.071

$0.061

IBS Electronics

USA . 1,020,000 parts In-Stock

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$0.046

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$0.062

NAC Semi

USA . 378,000 parts In-Stock

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Chip Stock

USA . 332,500 parts In-Stock

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Vyrian

USA . 253,257 parts In-Stock

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Infinite Electronics LLP

India . 192,000 parts In-Stock

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NexGen Digital

USA . 24,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 19,661 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,635 parts In-Stock

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J2 Sourcing AB

Sweden . 2,420 parts In-Stock

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Semicontronic

India . 259,715 parts In-Stock

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Ampacity Inc.

Singapore . 260,099 parts In-Stock

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Corphita

USA . 1,671 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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Component Stockers USA

USA . 371,586 parts In-Stock

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$0.090

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371,586

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Argo Parts USA

USA . 110 parts In-Stock

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$0.103

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Netroflash

USA . 1,000 parts In-Stock

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$0.440

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Aztec Data Supply Inc.

USA . 327 parts In-Stock

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$1.394

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327

$1.394

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Advanced Electronics

New Zealand . 32 parts In-Stock

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$1.805

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$1.714

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$1.714

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$1.805

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$1.714

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Perfect Parts

USA . 3,423,780 parts In-Stock

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GreenTree Electronics

Israel . 2,895,000 parts In-Stock

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Component Connect

USA . 1,748,751 parts In-Stock

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Formix International (Excess)

India . 316,738 parts In-Stock

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Eastek

USA . 177,000 parts In-Stock

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Glotronic Ltd.

UK . 151,200 parts In-Stock

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Kepictronics

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Continental Prestige Electronics

USA . 37,590 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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SupplyDigital Components

Austria . 4,865 parts In-Stock

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TANS Electronics

Latvia . 4,685 parts In-Stock

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Problanco Electronics

Mexico . 3,927 parts In-Stock

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Lixinc

USA . 3,691 parts In-Stock

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iodParts Technologies Inc.

India . 3,175 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 971 parts In-Stock

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Modulus Dynamics

Lithuania . 600 parts In-Stock

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Kulean Microsystems

USA . 234 parts In-Stock

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Overview

Unleash the power of innovation with the SBC846BDW1T1G by Onsemi - the ultimate solution for your small signal bipolar junction transistor needs. With a reputation for top-quality products, Onsemi delivers unmatched reliability and performance in every component. Ideal for amplifier applications, this NPN transistor offers seamless integration and superior functionality. Experience enhanced efficiency and precision with the SBC846BDW1T1G, designed to elevate your projects to new heights. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy body material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification purposes, making this product suitable for amplifier circuits.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility and control in circuit design, enabling efficient amplification in applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used for small outline transistors, providing a compact form factor for space-constrained designs.

Terminal Form: GULL WING

Gull wing terminal form offers easy soldering and secure connection, improving the overall reliability and longevity of the transistor.

Maximum Power Dissipation (Abs): 0.38 W

High maximum power dissipation allows the transistor to handle higher power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures efficient signal amplification and stability in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments without performance degradation, increasing versatility.

Maximum Collector-Emitter Voltage: 65 V

High collector-emitter voltage rating provides a wider voltage handling range, making the transistor suitable for different circuit requirements.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability, making the transistor a durable and long-lasting choice for amplifier applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the transistor can function in cold environments without issues, expanding its potential applications.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows the transistor to handle relatively high current levels, supporting robust amplifier circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection in the long term.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and connection configuration, allowing for versatile circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time ensures proper soldering and reliability during assembly, reducing the risk of damage to the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature makes the transistor suitable for lead-free soldering processes, ensuring compliance with modern manufacturing standards.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality, making the transistor suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for fast response and signal processing in amplifier circuits, enhancing overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC846BDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBC846BDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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