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SBC847BLT1G

Onsemi

SBC847BLT1G by Onsemi

SBC847BLT1G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 200, and IC of 0.1A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and operating temperature range from -55 to 150°C.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 207,000 parts In-Stock

1+ parts

$0.070

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$0.070

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$0.070

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$0.070

$0.070

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Mouser Electronics

USA . 18,580 parts In-Stock

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$0.340

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$0.129

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$0.084

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$0.340

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Newark

USA . 9,495 parts In-Stock

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$0.350

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$0.132

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$0.085

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9,495

$0.350

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$0.085

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Adafruit Industries

USA . 40 parts In-Stock

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$1.347

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$1.280

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$1.280

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40

$1.347

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$1.280

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Verical

USA . 1,170,000 parts In-Stock

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DigiKey

USA . 28,823 parts In-Stock

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Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

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Avnet

USA . 18,000 parts In-Stock

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Arrow

USA . 18,000 parts In-Stock

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$0.042

Element14

Singapore . 10,490 parts In-Stock

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$0.176

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$0.096

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$0.095

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$0.176

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$0.095

Farnell

UK . 10,490 parts In-Stock

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$0.104

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$0.067

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$0.059

10,490

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$0.104

$0.067

$0.059

Chip1Stop

Japan . 1,601 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,241 parts In-Stock

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$0.042

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$0.042

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Nova Conductors

Japan . 650 parts In-Stock

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$0.094

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650

$0.094

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Bristol Electronics

USA . 2,682 parts In-Stock

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$0.225

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$0.113

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$0.045

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2,682

$0.225

$0.113

$0.045

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TME

Poland . 408 parts In-Stock

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$0.300

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$0.118

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$0.075

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$0.056

408

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$0.118

$0.075

$0.056

IBS Electronics

USA . 249,000 parts In-Stock

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Flip Electronics

USA . 237,000 parts In-Stock

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Vyrian

USA . 78,444 parts In-Stock

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Chip Stock

USA . 48,500 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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$0.088

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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Sensible Micro Corp

USA . 1,856 parts In-Stock

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Cyclops Electronics Ltd

UK . 118 parts In-Stock

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EMSNET

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Distributors (Availability)

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Semicontronic

India . 77,771 parts In-Stock

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77,771

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Corohmni

South Africa . 207 parts In-Stock

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Corphita

USA . 984 parts In-Stock

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Argo Parts USA

USA . 2,333 parts In-Stock

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$0.078

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$0.076

2,333

$0.078

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$0.076

Modulus Dynamics

Lithuania . 55 parts In-Stock

1+ parts

$0.086

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$0.086

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$0.083

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55

$0.086

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Netroflash

USA . 500 parts In-Stock

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$0.090

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$0.088

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$0.094

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Aztec Data Supply Inc.

USA . 198 parts In-Stock

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$1.285

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.347

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$1.280

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$1.280

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Perfect Parts

USA . 339,360 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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Continental Prestige Electronics

USA . 195,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

USA . 18,375 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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SupplyDigital Components

Austria . 6,562 parts In-Stock

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TANS Electronics

Latvia . 4,513 parts In-Stock

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Kulean Microsystems

USA . 3,916 parts In-Stock

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Problanco Electronics

Mexico . 3,682 parts In-Stock

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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Robosynatics

Brazil . 450 parts In-Stock

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$45.021

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$45.021

$45.021

Lucentia Tech

USA . 450 parts In-Stock

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$45.021

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$45.021

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$45.021

$45.021

Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the SBC847BLT1G by Onsemi. This NPN transistor is designed with precision and expertise, making it ideal for a wide range of applications. With a maximum VCEsat of 0.6V and a minimum DC current gain of 200, this transistor offers exceptional performance and efficiency. Whether you're working on automotive, industrial, or consumer electronics projects, the SBC847BLT1G is sure to deliver the value and reliability you need. Trust Onsemi for all your semiconductor needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, making it versatile for different electronic designs.

Configuration: SINGLE

Simplified design and operation due to single configuration.

Surface Mount: YES

Allows for easy integration onto a circuit board, saving space and facilitating automated assembly.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in minimizing power loss and improving efficiency in electronic circuits.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting on a circuit board.

Terminal Form: GULL WING

Enables secure soldering onto the PCB, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for many low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the PCB and allows for denser circuit layouts.

Minimum DC Current Gain (hFE): 200

High current gain provides good amplification capability in electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably in higher temperature environments, suitable for industrial applications.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes distortion in high-frequency signal applications.

Maximum Collector-Emitter Voltage: 45 V

Can withstand relatively high voltage levels in various circuit configurations.

Transistor Element Material: SILICON

Provides good performance and reliability compared to other materials.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, suitable for outdoor or industrial applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good solderability and ensures long-term stability of electrical connections.

Terminal Position: DUAL

Facilitates easy mounting and connection in circuit designs.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications such as RF amplification or signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC847BLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

SBC847BLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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