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SBC807-25LT1G

Onsemi

SBC807-25LT1G by Onsemi

SBC807-25LT1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, min DC current gain (hFE) of 160, and max collector-emitter voltage of 45V. It is commonly used for switching applications in various industries.

Median Price

$0.231

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

$0.060

100+ parts

$0.060

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$0.060

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-

9,000

$0.060

$0.060

$0.060

-

DigiKey

USA . 101,665 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

1k+ parts

$0.075

10k+ parts

$0.053

101,665

$0.300

$0.115

$0.075

$0.053

Mouser Electronics

USA . 93,995 parts In-Stock

1+ parts

$0.370

100+ parts

$0.159

1k+ parts

$0.088

10k+ parts

$0.077

93,995

$0.370

$0.159

$0.088

$0.077

Chip1Stop

Japan . 40 parts In-Stock

1+ parts

$0.703

100+ parts

-

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40

$0.703

-

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Verical

USA . 42,000 parts In-Stock

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-

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$0.072

42,000

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-

-

$0.072

Master Electronics

USA . 42,000 parts In-Stock

1+ parts

-

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$0.059

42,000

-

-

-

$0.059

Element14

Singapore . 11,689 parts In-Stock

1+ parts

-

100+ parts

$0.231

1k+ parts

$0.113

10k+ parts

$0.111

11,689

-

$0.231

$0.113

$0.111

Farnell

UK . 5,999 parts In-Stock

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-

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5,999

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Distributors (In-Stock)

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Digiode

USA . 1,278 parts In-Stock

1+ parts

$0.014

100+ parts

-

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1,278

$0.014

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-

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.234

100+ parts

-

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450

$0.234

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TME

Poland . 3,000 parts In-Stock

1+ parts

$0.260

100+ parts

$0.103

1k+ parts

$0.066

10k+ parts

$0.049

3,000

$0.260

$0.103

$0.066

$0.049

NAC Semi

USA . 768,000 parts In-Stock

1+ parts

-

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$0.076

768,000

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$0.076

Chip Stock

USA . 434,500 parts In-Stock

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434,500

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Vyrian

USA . 15,679 parts In-Stock

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15,679

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ComSIT Distribution GmbH

Germany . 4,770 parts In-Stock

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4,770

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ComSIT USA

USA . 4,770 parts In-Stock

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4,770

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IBS Electronics

USA . 912 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.067

10k+ parts

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912

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$0.067

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,857 parts In-Stock

1+ parts

$0.013

100+ parts

$0.013

1k+ parts

$0.013

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16,857

$0.013

$0.013

$0.013

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Ampacity Inc.

Singapore . 13,276 parts In-Stock

1+ parts

$0.013

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13,276

$0.013

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Corphita

USA . 1,353 parts In-Stock

1+ parts

$0.014

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1,353

$0.014

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Corohmni

South Africa . 323 parts In-Stock

1+ parts

$0.015

100+ parts

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323

$0.015

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Argo Parts USA

USA . 345 parts In-Stock

1+ parts

$0.075

100+ parts

-

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10k+ parts

$0.072

345

$0.075

-

-

$0.072

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

$0.223

10k+ parts

$0.218

1,000

$0.234

-

$0.223

$0.218

Continental Prestige Electronics

USA . 1,514 parts In-Stock

1+ parts

$0.244

100+ parts

$0.106

1k+ parts

$0.047

10k+ parts

$0.032

1,514

$0.244

$0.106

$0.047

$0.032

Aztec Data Supply Inc.

USA . 176 parts In-Stock

1+ parts

$1.271

100+ parts

-

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176

$1.271

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$1.445

100+ parts

$1.373

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$1.373

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900

$1.445

$1.373

$1.373

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Perfect Parts

USA . 1,107,956 parts In-Stock

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1,107,956

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Kepictronics

USA . 387,000 parts In-Stock

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387,000

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RC Electronics

USA . 118,290 parts In-Stock

1+ parts

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$0.080

1k+ parts

$0.070

10k+ parts

$0.070

118,290

-

$0.080

$0.070

$0.070

Eastek

USA . 21,000 parts In-Stock

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21,000

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Problanco Electronics

Mexico . 7,602 parts In-Stock

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7,602

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Lixinc

USA . 6,482 parts In-Stock

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6,482

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Kulean Microsystems

USA . 5,702 parts In-Stock

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5,702

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TANS Electronics

Latvia . 4,972 parts In-Stock

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4,972

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SupplyDigital Components

Austria . 3,789 parts In-Stock

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3,789

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UHIMA Technologies

Türkiye . 102 parts In-Stock

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102

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 40 parts In-Stock

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40

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Robosynatics

Brazil . 30 parts In-Stock

1+ parts

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100+ parts

$1.497

1k+ parts

$1.497

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$1.497

30

-

$1.497

$1.497

$1.497

Lucentia Tech

USA . 30 parts In-Stock

1+ parts

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100+ parts

$1.497

1k+ parts

$1.497

10k+ parts

$1.497

30

-

$1.497

$1.497

$1.497

Overview

Discover the SBC807-25LT1G, a high-quality Small Signal Bipolar Junction Transistor (BJT) manufactured by Onsemi. Designed for switching applications, this PNP transistor offers outstanding performance and reliability. With its surface mount capability and compact package shape, it is perfect for space-constrained designs. Benefit from its low VCEsat of only 0.7V, ensuring efficient power usage. Whether you're working on automotive electronics or industrial controls, the SBC807-25LT1G is the ideal choice. Trust in Onsemi's expertise and enjoy the value and advantages this product brings to your projects.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy integration into complementary circuits and enables efficient switching.

Configuration:

SINGLE - The single configuration simplifies circuit design and ensures straightforward implementation.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor offers reliable performance and efficient power management.

Surface Mount:

YES - The surface mount capability enables easy and efficient integration onto circuit boards, saving space and reducing assembly time.

Maximum VCEsat:

0.7 V - With a low saturation voltage, this transistor minimizes power losses and improves overall system efficiency.

Package Shape:

RECTANGULAR - The rectangular package shape provides compatibility with standard mounting techniques, ensuring easy installation.

Terminal Form:

GULL WING - The gull wing terminal form allows for secure and reliable soldering connections, enhancing overall product longevity.

No. of Elements:

1 - The transistor's single element design simplifies circuit layout and reduces the risk of component failure.

No. of Terminals:

3 - With three terminals, this transistor provides easy connection to external components, enhancing overall functionality.

Maximum Power Dissipation (Abs):

0.3 W - With a high power dissipation capability, this transistor can handle demanding applications without overheating.

Package Style (Meter):

SMALL OUTLINE - The small outline package style minimizes space requirements, making it ideal for compact designs.

Minimum DC Current Gain (hFE):

160 - The high DC current gain ensures accurate amplification and control, contributing to reliable signal transmission.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for use in demanding environments, ensuring long-term reliability.

Maximum Collector-Emitter Voltage:

45 V - With a high voltage rating, this transistor can handle higher voltage circuits and offers versatility in various applications.

Transistor Element Material:

SILICON - The use of silicon provides excellent performance and reliability, making it a popular choice in transistor manufacturing.

Minimum Operating Temperature:

55 °C - The low minimum operating temperature range enables reliable operation in extreme cold conditions.

Maximum Collector Current (IC):

0.5 A - With a high collector current capability, this transistor can handle high-current applications with ease.

Terminal Finish:

Matte Tin (Sn) - annealed - The matte tin finish provides enhanced solderability and corrosion resistance for long-term performance.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit design and facilitates easy connections for improved functionality.

Moisture Sensitivity Level (MSL):

1 - This transistor has a low moisture sensitivity level, ensuring it can withstand various environmental conditions without degradation.

Reference Standard:

AEC-Q101 - Compliant with the AEC-Q101 standard, this transistor meets automotive industry specifications, making it suitable for automotive applications.

Nominal Transition Frequency (fT):

100 MHz - With a high nominal transition frequency, this transistor can handle high-frequency signals and provides excellent amplification for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC807-25LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

SBC807-25LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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