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BC817-40-7-F

Diodes Incorporated

BC817-40-7-F by Diodes Incorporated

BC817-40-7-F by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 0.5A IC, and 45V VCE. Ideal for switching applications, it has a max power dissipation of 0.31W and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.142

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 51,842 parts In-Stock

1+ parts

$0.230

100+ parts

$0.086

1k+ parts

$0.056

10k+ parts

$0.039

51,842

$0.230

$0.086

$0.056

$0.039

Newark

USA . 50 parts In-Stock

1+ parts

$0.298

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$0.118

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$0.079

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50

$0.298

$0.118

$0.079

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Element14

Singapore . 8,029 parts In-Stock

1+ parts

$0.306

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$0.105

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$0.061

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8,029

$0.306

$0.105

$0.061

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Verical

USA . 699,000 parts In-Stock

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$0.016

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$0.016

Arrow

USA . 615,000 parts In-Stock

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$0.018

615,000

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Farnell

UK . 10,425 parts In-Stock

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$0.054

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$0.027

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$0.021

10,425

-

$0.054

$0.027

$0.021

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.043

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10

$0.043

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Bristol Electronics

USA . 2,875 parts In-Stock

1+ parts

$0.113

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$0.056

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$0.017

2,875

$0.113

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$0.056

$0.017

Component Electronics Inc.

Canada . 1,266 parts In-Stock

1+ parts

$0.380

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$0.290

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$0.250

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1,266

$0.380

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NAC Semi

USA . 5,427,000 parts In-Stock

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$0.025

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IBS Electronics

USA . 5,421,000 parts In-Stock

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Martec Srl

Italy . 384,000 parts In-Stock

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Vyrian

USA . 356,636 parts In-Stock

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Chip Stock

USA . 75,028 parts In-Stock

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Rutronik

Germany . 69,000 parts In-Stock

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69,000

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$0.020

Component Sense

UK . 45,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 39,150 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 10,665 parts In-Stock

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Micros

Poland . 6,000 parts In-Stock

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$0.018

6,000

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$0.018

Partservice

France . 6,000 parts In-Stock

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$0.111

10k+ parts

$0.017

6,000

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$0.111

$0.017

Micros sp.j. W. Kędra i J. Lic

Poland . 6,000 parts In-Stock

1+ parts

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$0.118

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$0.018

6,000

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$0.118

$0.018

VNN

France . 3,897 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,288 parts In-Stock

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ComSIT USA

USA . 2,175 parts In-Stock

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Lantek

USA . 1,639 parts In-Stock

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Atlantic Semiconductor

USA . 1,335 parts In-Stock

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Semi Source

USA . 1,075 parts In-Stock

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Inventory MP

USA . 1,028 parts In-Stock

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1,028

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Ashlea Components Ltd

UK . 958 parts In-Stock

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NPI Materials, Inc.

USA . 75 parts In-Stock

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75

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Semicontronic

India . 405,793 parts In-Stock

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$0.014

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$0.014

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$0.014

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405,793

$0.014

$0.014

$0.014

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Ampacity Inc.

Singapore . 349,891 parts In-Stock

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$0.014

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Argo Parts USA

USA . 4,749 parts In-Stock

1+ parts

$0.042

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$0.040

4,749

$0.042

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$0.040

Modulus Dynamics

Lithuania . 23,493 parts In-Stock

1+ parts

$0.046

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$0.046

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$0.046

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23,493

$0.046

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$0.046

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Corohmni

South Africa . 943 parts In-Stock

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$0.046

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943

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Advanced Electronics

New Zealand . 1,200 parts In-Stock

1+ parts

$0.047

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$0.045

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$0.045

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1,200

$0.047

$0.045

$0.045

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Continental Prestige Electronics

USA . 9,860 parts In-Stock

1+ parts

$0.205

100+ parts

$0.084

1k+ parts

$0.035

10k+ parts

$0.022

9,860

$0.205

$0.084

$0.035

$0.022

Aztec Data Supply Inc.

USA . 4,156 parts In-Stock

1+ parts

$0.885

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4,156

$0.885

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Andel Nordic

Denmark . 3,812 parts In-Stock

1+ parts

$2.816

100+ parts

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1k+ parts

$2.703

10k+ parts

$2.703

3,812

$2.816

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$2.703

$2.703

Eastek

USA . 732,000 parts In-Stock

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Perfect Parts

USA . 475,281 parts In-Stock

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GreenTree Electronics

Israel . 215,400 parts In-Stock

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Robosynatics

Brazil . 25,321 parts In-Stock

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$0.045

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$0.044

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$0.044

25,321

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$0.045

$0.044

$0.044

Lucentia Tech

USA . 25,321 parts In-Stock

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$0.045

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$0.044

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$0.044

25,321

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$0.045

$0.044

$0.044

Futuretech Components

Singapore . 15,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 12,002 parts In-Stock

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Lixinc

USA . 11,501 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Cyclops Electronics Ltd (Excess)

UK . 3,288 parts In-Stock

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3,288

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Kepictronics

USA . 3,000 parts In-Stock

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Formix International (Excess)

India . 102 parts In-Stock

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Overview

Enhance your electronic projects with the BC817-40-7-F from Diodes Incorporated. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance in switching applications. With a maximum power dissipation of 0.31W and a maximum collector-emitter voltage of 45V, this NPN transistor provides reliable functionality for a wide range of projects. Its compact package shape and surface mount capability make it easy to integrate into your designs. Trust Diodes Incorporated to deliver top-notch products that meet your needs and exceed your expectations. Elevate your projects with the BC817-40-7-F and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance characteristics.

Configuration: SINGLE

Simplified design and easy to integrate in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Suitable for automated assembly processes and saves space on the PCB.

Package Shape: RECTANGULAR

Standard shape that allows for easy handling and mounting on PCBs.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 0.31 W

Can handle moderate power levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact form factor suitable for space-constrained designs.

Minimum DC Current Gain (hFE): 170

Ensures reliable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate efficiently in a wide range of temperatures, providing reliability in different environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle moderate voltage levels, suitable for various applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics, such as high gain and low noise.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various applications.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Allows for flexibility in mounting and connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration during assembly processes.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during assembly processes without damage.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, offering good performance in such scenarios.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-40-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

170

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC817-40-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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