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BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

43

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1k+

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Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$0.053

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$0.050

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$0.050

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$0.053

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Arrow

USA . 82,950 parts In-Stock

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$0.170

100+ parts

$0.066

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$0.042

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$0.029

82,950

$0.170

$0.066

$0.042

$0.029

EBV Elektronik

Germany . 4,344,000 parts In-Stock

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Verical

USA . 82,950 parts In-Stock

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Flip Electronics (Authorized)

USA . 33,000 parts In-Stock

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Rochester

USA . 24,220 parts In-Stock

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RS (Exports)

UK . 20,400 parts In-Stock

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Chip1Stop

Japan . 22 parts In-Stock

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EXC GmbH

Germany . 3,000 parts In-Stock

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$0.016

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Digiode

USA . 1,044 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Component Electronics Inc.

Canada . 1,556 parts In-Stock

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NAC Semi

USA . 7,215,000 parts In-Stock

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IBS Electronics

USA . 711,000 parts In-Stock

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Component Sense

UK . 332,377 parts In-Stock

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Vyrian

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DigiKey Marketplace

USA . 246,983 parts In-Stock

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Cyclops Electronics Ltd

UK . 120,074 parts In-Stock

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Chip Stock

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Italy . 42,000 parts In-Stock

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Italy . 39,721 parts In-Stock

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PC Components Company LLC

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ComSIT USA

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Inventory MP

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Semtec, LLC

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LIBRA Elektronik GmbH

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Bristol Electronics

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ComSIT Distribution GmbH

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Speed Components Ltd

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Corel Iberica Componentes, S.L.

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M&R Communications

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Elcom Components

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Sensible Micro Corp

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Holdelec - ElecDif-Pro

France . 1,600 parts In-Stock

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Prism Electronics

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Microfarads

USA . 52 parts In-Stock

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Ukraine . 4 parts In-Stock

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Ampacity Inc.

Singapore . 537,959 parts In-Stock

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Semicontronic

India . 536,264 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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Corphita

USA . 437 parts In-Stock

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Component Stockers USA

USA . 273,064 parts In-Stock

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Argo Parts USA

USA . 4,676 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Modulus Dynamics

Lithuania . 3,181 parts In-Stock

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 283 parts In-Stock

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Perfect Parts

USA . 7,299,551 parts In-Stock

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Continental Prestige Electronics

USA . 227,783 parts In-Stock

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Eastek

USA . 99,000 parts In-Stock

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Glotronic Ltd.

UK . 67,200 parts In-Stock

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ChipstoGo Electronic ltd

UK . 63,000 parts In-Stock

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GreenTree Electronics

Israel . 48,000 parts In-Stock

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iodParts Technologies Inc.

India . 29,680 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 22,620 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 17,946 parts In-Stock

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Problanco Electronics

Mexico . 8,093 parts In-Stock

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Kulean Microsystems

USA . 6,844 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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India . 3,050 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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TANS Electronics

Latvia . 2,322 parts In-Stock

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SupplyDigital Components

Austria . 1,999 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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Lucentia Tech

USA . 1,800 parts In-Stock

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$0.615

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$0.569

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$0.569

Ashlea Components Ltd (Excess)

UK . 1,342 parts In-Stock

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Infinite Electronics LLP (Excess)

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Allen Electronics Distributors

USA . 1,000 parts In-Stock

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Brazil . 900 parts In-Stock

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$2.520

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$2.334

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$2.334

Computer Components Inc. - USA

USA . 853 parts In-Stock

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Türkiye . 138 parts In-Stock

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Overview

Enhance your electronic designs with the BC817-40LT1G by Onsemi, a top-quality NPN small signal bipolar junction transistor. Manufactured by Onsemi, known for their commitment to excellence and innovation, this transistor offers superior performance and reliability. Ideal for a variety of applications, this transistor is perfect for amplification, switching, and voltage regulation tasks. Experience the value and benefits of using the BC817-40LT1G in your projects, ensuring efficiency and precision every time. Trust Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile for a variety of applications.

Configuration: SINGLE

Simplified setup and easier integration into circuits, making it user-friendly.

Surface Mount: YES

Allows for easy mounting onto circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Rectangular shape is typically easier to handle and place on a circuit board compared to irregular shapes.

Terminal Form: GULL WING

Gull wing terminals are easy to solder onto the circuit board, ensuring a secure connection.

Maximum Power Dissipation (Abs): 0.3 W

Able to handle moderate power levels, making it suitable for a wide range of applications without overheating.

Minimum DC Current Gain (hFE): 250

High DC current gain ensures efficient amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltages, providing flexibility for various voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon is a common material known for its reliability and consistent performance in electronic components.

Minimum Operating Temperature: -55 °C

Able to operate in extreme low-temperature conditions, making it suitable for diverse environmental settings.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, making it versatile for a range of circuit designs.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides a stable and corrosion-resistant surface for soldering, ensuring a reliable connection.

Terminal Position: DUAL

Dual terminal position enables convenient connections to other components in the circuit, enhancing flexibility in design.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand heating during the reflow process for soldering without damage, ensuring proper integration onto the circuit board.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes, ensuring a secure bond between the transistor and the circuit board.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-40LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC817-40LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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