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2N2907AUB

Silicon Transistor

2N2907AUB by Silicon Transistor

2N2907AUB is a PNP silicon transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in small signal applications where low power dissipation and high DC current gain (hFE) are required.

Median Price

$6.438

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Arrow

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Mouser Electronics

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Adafruit Industries

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DigiKey

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Master Electronics

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Verical

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$6.647

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Freelance Electronics

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$4.266

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Digiode

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NAC Semi

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Nova Conductors

Japan . 900 parts In-Stock

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Anansix

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NexGen Digital

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Electro Sonic

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$6.110

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$5.460

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Lantek

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IBS Electronics

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EMSNET

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Semi Source

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Aztec Data Supply Inc.

USA . 2,476 parts In-Stock

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$0.380

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IDEA Electronic Components Group

UK . 1,888 parts In-Stock

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$0.713

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$0.642

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MKK Technologies

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DigiPath Technology Company

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Corphita

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Continental Prestige Electronics

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Corohmni

South Africa . 97 parts In-Stock

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Advanced Electronics

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Modulus Dynamics

Lithuania . 600 parts In-Stock

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Neutron USA

USA . 50 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Argo Parts USA

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RGB Technical Solutions

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Netroflash

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Parana Technologies

USA . 1,146 parts In-Stock

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GreenTree Electronics

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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Perfect Parts

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Overview

Discover the power of the 2N2907AUB by Silicon Transistor, a top-quality small signal bipolar junction transistor (BJT). With its ceramic and metal-sealed co-fired body, this PNP transistor offers unparalleled durability and reliability. Whether you're designing audio amplifiers, voltage regulators, or switching circuits, the 2N2907AUB is the perfect choice. Benefit from its no-lead terminal form and surface mount capability, allowing for easy integration into any project. With a maximum collector-emitter voltage of 60V and a maximum collector current of 0.6A, this transistor delivers exceptional performance. Invest in the 2N2907AUB today and experience the advantages it brings to your applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent heat dissipation and protection, making the transistor robust and durable.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring this specific polarity.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Being surface mountable saves space on PCBs and allows for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape provides stability and easier mounting onto circuit boards.

No. of Terminals: 3

Having only 3 terminals simplifies connection in circuits and reduces chances of errors.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can handle moderate power loads effectively.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures stable and predictable amplification in various applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this transistor can withstand harsh environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60 V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor is suitable for low to moderate current applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures stable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in mounting and connection options.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N2907AUB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Silicon Transistor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-CDSO-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

2N2907AUB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-533-3572, 5961015333572

NIIN

015333572

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