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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1149ASTOB by Diodes Incorporated

ZTX1149ASTOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1 W

NO

WIRE

SINGLE

SILICON

135 MHz

.3 V

ZTX1149ASTZ by Diodes Incorporated

ZTX1149ASTZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

135 MHz

.3 V

ZTX1051ASTOB by Diodes Incorporated

ZTX1051ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1051ASTZ by Diodes Incorporated

ZTX1051ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1048ASTOB by Diodes Incorporated

ZTX1048ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTOA by Diodes Incorporated

ZTX1048ASTOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTZ by Diodes Incorporated

ZTX1048ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SWITCHING

SILICON

150 MHz

.245 V

FMMT720-7 by Diodes Incorporated

FMMT720-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

25 pF

40 V

SINGLE

12

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

190 MHz

.33 V

2SC2909S-AA by Onsemi

2SC2909S-AA

Onsemi

2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.

.07 A

2 pF

160 V

SINGLE

140

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.6 W

.6 W

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

.3 V

CMPT2907ABKPBFREE by Central Semiconductor

CMPT2907ABKPBFREE

Central Semiconductor

CMPT2907ABKPBFREE by Central Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V. It is commonly used for switching applications and has a max operating temperature of 150°C.

.6 A

8 pF

60 V

SINGLE

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

MSB92AS1WT1G by Onsemi

MSB92AS1WT1G

Onsemi

MSB92AS1WT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, it offers a min hFE of 25 and 0.15W power dissipation.

.5 A

300 V

SINGLE

25

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

50 MHz

BC847AQ-7-F by Diodes Incorporated

BC847AQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC848CQ-7-F by Diodes Incorporated

BC848CQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

FMMT717QTA by Diodes Incorporated

FMMT717QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Collector Current (IC): 2.5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

2.5 A

12 V

SINGLE

45

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

110 MHz

BC640-016G by Onsemi

BC640-016G

Onsemi

BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.

.5 A

80 V

SINGLE

25

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

150 MHz

SMMBT2369LT1G by Onsemi

SMMBT2369LT1G

Onsemi

SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).

.2 A

15 V

SINGLE

20

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.3 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

18 ns

12 ns

FMMT625QTA by Diodes Incorporated

FMMT625QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 135 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

150 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

135 MHz

ZXT13N50DE6QTA by Diodes Incorporated

ZXT13N50DE6QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;

HIGH RELIABILITY

4 A

50 V

SINGLE

10

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

ZXT13P40DE6QTA by Diodes Incorporated

ZXT13P40DE6QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

3 A

40 V

SINGLE

15

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.7 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

MMBT2369A_R1_00001 by Panjit International

MMBT2369A_R1_00001

Panjit International

MMBT2369A_R1_00001 by Panjit International is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a max collector current of 0.2A. It is commonly used in applications requiring low power amplification or switching, such as audio amplifiers or digital logic circuits.

.2 A

15 V

SINGLE

40

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SILICON

FMMT491AQTC by Diodes Incorporated

FMMT491AQTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

40 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

FMMT560QTC by Diodes Incorporated

FMMT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

HIGH RELIABILITY

.15 A

500 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

FZT489QTA by Diodes Incorporated

FZT489QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

1 A

30 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

150 MHz

2DA1971-13 by Diodes Incorporated

2DA1971-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

2SC2655L-Y-AP by Micro Commercial Components

2SC2655L-Y-AP

Micro Commercial Components

2SC2655L-Y-AP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 2A. It is commonly used in small signal applications due to its silicon element material and fT of 100MHz. The package style is cylindrical with through-hole terminals.

2 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

NO

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

BCX6825QTA by Diodes Incorporated

BCX6825QTA

Diodes Incorporated

BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

FMMT491QTC by Diodes Incorporated

FMMT491QTC

Diodes Incorporated

FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.

HIGH RELIABILITY

1 A

60 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

2SAR502EBTL by ROHM

2SAR502EBTL

ROHM

ROHM 2SAR502EBTL is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and fT of 520MHz. Ideal for amplifier applications due to its small outline package style and max collector current of 0.5A. Suitable for surface mount designs with a rectangular package shape and flat terminal form.

.5 A

4 pF

30 V

SINGLE

200

R-PDSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

YES

TIN

FLAT

DUAL

10

AMPLIFIER

SILICON

520 MHz

.4 V

SMMBTA14LT3G by Onsemi

SMMBTA14LT3G

Onsemi

SMMBTA14LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.3W, hFE of 5000, and fT of 125MHz. Ideal for applications requiring high DC current gain and fast transition frequency in surface mount configurations.

.3 A

SINGLE

5000

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

MATTE TIN

30

125 MHz

3STL2540 by STMicroelectronics

3STL2540

STMicroelectronics

3STL2540 by STMicroelectronics is a PNP BJT with 1.2W power dissipation, hFE of 100, and IC of 5A. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150 °C.

5 A

SINGLE

100

1

150 Cel

NOT SPECIFIED

PNP

1.2 W

Other Transistors

YES

NOT SPECIFIED

LP395Z/LFT4 by Texas Instruments

LP395Z/LFT4

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;

SINGLE

e3

1

125 Cel

NPN

Other Transistors

NO

MATTE TIN

BC847C-TP-HF by Micro Commercial Components

BC847C-TP-HF

Micro Commercial Components

BC847C-TP-HF by Micro Commercial Components is a NPN BJT with hFE of 420, VCE of 45V, and fT of 100MHz. Ideal for small signal applications in electronics due to its SILICON material, 0.1A IC, and GULL WING terminals for surface mount assembly.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

MMBT2222A-TP-HF by Micro Commercial Components

MMBT2222A-TP-HF

Micro Commercial Components

MMBT2222A-TP-HF by Micro Commercial Components is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

MMBT2907A-TP-HF by Micro Commercial Components

MMBT2907A-TP-HF

Micro Commercial Components

MMBT2907A-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, DC current gain of 50, and power dissipation of 0.35W. With a small outline package style and surface mount capability, it operates at up to 150°C.

.6 A

60 V

SINGLE

50

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

110 ns

50 ns

FMMT722QTA by Diodes Incorporated

FMMT722QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .806 W; Maximum Collector Current (IC): 1.5 A;

HIGH RELIABILITY

1.5 A

70 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.806 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

MMBT3906-TP-HF by Micro Commercial Components

MMBT3906-TP-HF

Micro Commercial Components

MMBT3906-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. With a max power dissipation of 0.3W and max collector-emitter voltage of 40V, it operates b/w -55 to 150°C. This surface-mount transistor has a transition frequency of 250MHz and turn-on time of 70ns, making it ideal for small outline packages in electronic circuits.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

305 ns

70 ns

BCW68GE6327HTSA1 by Infineon Technologies

BCW68GE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

PZTA42E6327HTSA1 by Infineon Technologies

PZTA42E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SILICON

70 MHz

SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BC846BWE6327HTSA1 by Infineon Technologies

BC846BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

65 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC857BE6327HTSA1 by Infineon Technologies

BC857BE6327HTSA1

Infineon Technologies

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC857CE6327HTSA1 by Infineon Technologies

BC857CE6327HTSA1

Infineon Technologies

Infineon's BC857CE6327HTSA1 is a PNP BJT transistor with hFE of 420, Vce of 45V, and Ic of 0.1A. Ideal for switching applications, it operates at up to 150°C with a transition frequency of 250MHz. This surface-mount device has a gull wing terminal form in a small outline package.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCX55E6327HTSA1 by Infineon Technologies

BCX55E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BC847BWE6433HTMA1 by Infineon Technologies

BC847BWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847CWE6433HTMA1 by Infineon Technologies

BC847CWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC848AE6327HTSA1 by Infineon Technologies

BC848AE6327HTSA1

Infineon Technologies

BC848AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with a min DC current gain of 110 and max collector-emitter voltage of 30V. It is designed for switching applications, featuring a surface mount package style with Gull Wing terminals. With a nominal transition frequency of 250MHz, it is suitable for high-frequency electronic circuits.

.1 A

30 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849BE6327HTSA1 by Infineon Technologies

BC849BE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849CWE6327HTSA1 by Infineon Technologies

BC849CWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz