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MMBT2369A_R1_00001

Panjit International

MMBT2369A_R1_00001 by Panjit International

MMBT2369A_R1_00001 by Panjit International is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a max collector current of 0.2A. It is commonly used in applications requiring low power amplification or switching, such as audio amplifiers or digital logic circuits.

Median Price

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3

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1k+

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Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Vyrian

USA . 8,053 parts In-Stock

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8,053

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Nova Conductors

Japan . 650 parts In-Stock

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650

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AZTECH Wire

Italy . 275 parts In-Stock

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$10.455

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275

$10.455

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Metaverse IC Inc.

Canada . 18,000 parts In-Stock

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18,000

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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QUARKTWIN TECHNOLOGY LTD

USA . 4,303 parts In-Stock

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4,303

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience the superior quality and performance of the MMBT2369A_R1_00001 by Panjit International. As a leader in manufacturing Small Signal Bipolar Junction Transistors (BJT), Panjit International delivers innovative solutions that meet your needs. This NPN transistor offers exceptional value, providing benefits such as efficient power management and reliable signal amplification. With its compact rectangular shape and surface mount design, it is perfect for space-constrained applications. Count on the MMBT2369A_R1_00001 to deliver optimal performance and enhance your electronic projects. Upgrade your designs with Panjit International's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's use of plastic/epoxy as the package body material ensures durability and resistance to external factors, making it a reliable choice.

Polarity or Channel Type: NPN

The NPN polarity or channel type of this transistor allows for efficient signal amplification and switching, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration of this transistor simplifies circuit design and integration, making it easier to use and suitable for various small signal applications.

Surface Mount: YES

The surface mount capability of this transistor enables easy installation on PCBs, saving valuable space and facilitating convenient manufacturing processes.

Package Shape: RECTANGULAR

The rectangular package shape provides stability and ease of integration into circuit designs, making this transistor a practical choice for compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal form allows for secure soldering and reliable electrical connections, ensuring optimal performance and longevity of the device.

No. of Elements: 1

This transistor consists of a single element, simplifying circuit designs and enhancing reliability.

No. of Terminals: 3

With three terminals, this transistor provides easy and efficient connections in various applications, ensuring flexibility and simplicity in circuit layouts.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this transistor offers space-saving benefits while maintaining excellent thermal performance, making it ideal for compact electronic applications.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides reliable amplification of small signals, ensuring accurate and efficient signal processing.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15 V allows for safe operation within voltage requirements, making this transistor suitable for a wide range of low voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, excellent temperature stability, and optimal power handling capabilities, making it a dependable choice.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current levels, making it suitable for small signal and low power applications.

Terminal Finish: TIN

The tin terminal finish enhances solderability and electrical conductivity, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

The dual terminal position provides convenient and versatile mounting options, allowing for flexible integration into various circuit layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2369A_R1_00001 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Panjit International

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

MMBT2369A_R1_00001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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