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2N2222AUA

Microchip Technology

2N2222AUA by Microchip Technology

2N2222AUA by Microchip is a NPN transistor with max. collector-emitter voltage of 50V and max. collector current of 0.8A. It has a min. DC current gain of 30, ideal for switching applications with a max. power dissipation of 0.65W in surface mount package style suitable for small outline designs.

Median Price

$27.100

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 650 parts In-Stock

1+ parts

$0.840

100+ parts

$0.798

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$0.798

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-

650

$0.840

$0.798

$0.798

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Microchip Technology

USA . 706 parts In-Stock

1+ parts

$27.100

100+ parts

$25.170

1k+ parts

$22.840

10k+ parts

-

706

$27.100

$25.170

$22.840

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DigiKey

USA . 100 parts In-Stock

1+ parts

$27.100

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$25.170

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100

$27.100

$25.170

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Mouser Electronics

USA . 23 parts In-Stock

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$27.100

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23

$27.100

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Verical

USA . 19 parts In-Stock

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$29.060

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$29.060

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TTI

USA . 15 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$21.110

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750

$21.110

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Vyrian

USA . 270 parts In-Stock

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270

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,532 parts In-Stock

1+ parts

$0.761

100+ parts

-

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3,532

$0.761

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-

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Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$0.840

100+ parts

$0.798

1k+ parts

$0.798

10k+ parts

-

650

$0.840

$0.798

$0.798

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Corohmni

South Africa . 390 parts In-Stock

1+ parts

$1.266

100+ parts

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390

$1.266

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$20.688

100+ parts

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1k+ parts

$19.860

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2,000

$20.688

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$19.860

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Continental Prestige Electronics

USA . 6,182 parts In-Stock

1+ parts

$21.110

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$20.688

6,182

$21.110

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$20.688

Modulus Dynamics

Lithuania . 650 parts In-Stock

1+ parts

$23.430

100+ parts

$23.196

1k+ parts

$22.493

10k+ parts

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650

$23.430

$23.196

$22.493

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Neutron USA

USA . 50 parts In-Stock

1+ parts

$128.370

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50

$128.370

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QUARKTWIN TECHNOLOGY LTD

USA . 20,978 parts In-Stock

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20,978

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QualityLine Systems

Poland . 8,178 parts In-Stock

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8,178

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Microchip USA

USA . 7,696 parts In-Stock

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7,696

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Marpe Global Electronics

Taiwan . 5,457 parts In-Stock

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5,457

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XL Components Corporation

Australia . 5,367 parts In-Stock

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5,367

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,808 parts In-Stock

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3,808

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Perfect Parts

USA . 152 parts In-Stock

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152

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Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

100+ parts

$0.903

1k+ parts

$0.903

10k+ parts

$0.903

100

-

$0.903

$0.903

$0.903

Lucentia Tech

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.903

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$0.903

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$0.903

100

-

$0.903

$0.903

$0.903

Cyclops Electronics Ltd (Excess)

UK . 99 parts In-Stock

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99

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Eliminating Global Boundries, Inc

USA . 28 parts In-Stock

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28

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RTC Component Inc.

USA . 14 parts In-Stock

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14

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Overview

Enhance your electronic projects with the reliable 2N2222AUA transistor by Microchip Technology. Manufactured with top-notch quality and expertise, this NPN small signal bipolar junction transistor is perfect for switching applications. Its compact package shape and surface mount design make it ideal for space-constrained projects. With a high DC current gain of 30 and maximum power dissipation of 0.65W, this transistor offers exceptional performance and efficiency. Upgrade your circuits today with the 2N2222AUA and experience unparalleled reliability and functionality.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal conductivity and robust construction, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

Suitable for general purpose switching applications and amplification, commonly used in electronic circuits.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easier to integrate into various electronic projects.

Transistor Application: SWITCHING

Designed specifically for fast switching operations, ideal for applications where quick response time is crucial.

Surface Mount: YES

Enables easy and convenient PCB mounting, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Allows for efficient use of space on the PCB, ensuring a compact and organized layout for the overall circuit design.

Maximum Power Dissipation (Abs): 0.65 W

Can handle moderate power levels, suitable for a wide range of applications without risking overheating or damage.

Minimum DC Current Gain (hFE): 30

Ensures stable and predictable amplification behavior, crucial for maintaining signal integrity and accuracy in circuits.

Maximum Operating Temperature: 200 °C

Allows for operation in high-temperature environments without performance degradation, ensuring reliability under challenging conditions.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage applications, providing versatility for different circuit requirements.

Transistor Element Material: SILICON

Offers high performance and reliability, commonly used in semiconductor devices for its superior electrical properties.

Maximum Turn On Time (ton): 35 ns

Enables fast switching speeds, essential for applications requiring precise timing and responsiveness.

Maximum Collector Current (IC): 0.8 A

Supports moderate current levels, suitable for various switching and amplification tasks in electronic circuits.

Maximum Turn Off Time (toff): 300 ns

Ensures efficient switching operation with minimal delay, improving overall performance and reducing power consumption.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, facilitating secure connections and minimizing electrical resistance.

Terminal Position: DUAL

Allows for versatile PCB layout options, offering flexibility in circuit design and integration.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N2222AUA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-CDSO-N4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N2222AUA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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