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MMBT3904WT1G

Onsemi

MMBT3904WT1G by Onsemi

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

59

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

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$0.035

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$0.033

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$0.033

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150

$0.035

$0.033

$0.033

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Newark

USA . 8,749 parts In-Stock

1+ parts

$0.145

100+ parts

$0.058

1k+ parts

$0.039

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8,749

$0.145

$0.058

$0.039

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Future Electronics

Canada . 6,729,000 parts In-Stock

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$0.017

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Verical

USA . 165,000 parts In-Stock

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$0.021

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Master Electronics

USA . 165,000 parts In-Stock

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$0.017

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DigiKey

USA . 150,000 parts In-Stock

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Arrow

USA . 147,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 129,000 parts In-Stock

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Element14

Singapore . 39,219 parts In-Stock

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$0.049

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Rochester

USA . 18,620 parts In-Stock

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$0.017

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Chip1Stop

Japan . 7,485 parts In-Stock

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Farnell

UK . 4,697 parts In-Stock

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$0.044

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$0.032

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Digiode

USA . 320 parts In-Stock

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$0.017

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TEDSS.com

USA . 15,000 parts In-Stock

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$0.015

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$0.028

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Nova Conductors

Japan . 48 parts In-Stock

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DF Sales Co.

USA . 368 parts In-Stock

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DF Sales Co.

USA . 368 parts In-Stock

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Component Electronics Inc.

Canada . 1,641 parts In-Stock

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$0.770

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$0.580

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$0.770

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IBS Electronics

USA . 15,507,000 parts In-Stock

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NAC Semi

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Chip Stock

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Electro Sonic

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DigiKey Marketplace

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Bristol Electronics

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Inventory MP

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Quantum Digital Technology

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Semi Source

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Prism Electronics

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Cyclops Electronics Ltd

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Rebound Electronics

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ComSIT Distribution GmbH

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Lantek

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Contempo Components LLC

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Diverse Electronics

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LWI Electronics Inc

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Classic Components Corporation

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Sensible Micro Corp

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A&K Electronics

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Connector Distribution Corp

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Right Parts Inc.

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First Choice Components Inc.

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LIBRA Elektronik GmbH

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Rotakorn

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Velocity Electronics

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Semtec, LLC

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NPI Materials, Inc.

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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North Shore Components

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A2Z Electronics, Inc.

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Martec Srl

Italy . 79 parts In-Stock

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PC Components Company LLC

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Semicontronic

India . 204,615 parts In-Stock

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Ampacity Inc.

Singapore . 203,016 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Corphita

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Component Stockers USA

USA . 1,471,291 parts In-Stock

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Modulus Dynamics

Lithuania . 15,248 parts In-Stock

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Argo Parts USA

USA . 3,536 parts In-Stock

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Continental Prestige Electronics

USA . 1,297 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Aztec Data Supply Inc.

USA . 69 parts In-Stock

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Benley Electronics

USA . 4 parts In-Stock

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Perfect Parts

USA . 4,539,242 parts In-Stock

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GreenTree Electronics

Israel . 1,152,000 parts In-Stock

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Metaverse IC Inc.

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Speed Components Ltd (Excess)

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Brazil . 11,051 parts In-Stock

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Lucentia Tech

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Kulean Microsystems

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Futuretech Components

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UHIMA Technologies

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Overview

Unlock the power of high-quality small signal bipolar junction transistors with the MMBT3904WT1G by Onsemi. Manufactured by a trusted industry leader, this NPN transistor is perfect for amplifier applications with its superior performance and reliability. Designed in a convenient surface mount package, this transistor offers customers the value and benefits of easy installation and efficient operation. From its high DC current gain to its wide operating temperature range, the MMBT3904WT1G is the ideal choice for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the product easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating mass production.

Package Shape: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy handling and mounting.

Terminal Form: GULL WING

Gull wing terminals offer secure solder connections and facilitate automated assembly processes.

No. of Terminals: 3

Simple 3-terminal design simplifies circuit connections and reduces the risk of errors during installation.

Maximum Power Dissipation: 0.15 W

With a low power dissipation rating, this transistor can be used in low-power applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 30

High DC current gain ensures efficient amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliable performance in diverse ambient conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material provides reliable and stable transistor performance over a wide temperature range.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time ensures quick response in switching applications, improving overall circuit efficiency.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in extreme cold environments without performance degradation.

Maximum Collector Current (IC): 0.2 A

The high maximum collector current rating enables the transistor to handle high current loads without overheating.

Maximum Turn Off Time (toff): 250 ns

Fast turn-off time ensures quick switching transitions, reducing switching loss and improving circuit efficiency.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance for reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit configurations and easy PCB layout.

Maximum Time At Peak Reflow Temperature (s): 30

Short duration at peak reflow temperature ensures proper solder reflow without damaging the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliable soldering and assembly in lead-free processes.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency allows for high-speed signal amplification and processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT3904WT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMBT3904WT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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