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Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.

Laser Diodes

Available Parts 2,400+

Part RoHS Manufacturer Description Optoelectronic Type Mounting Feature Terminal Finish Configuration Size No. of Functions Maximum Forward Current Peak Wavelength (nm) Packing Method Maximum Response Time Sub-Category Semiconductor Material Maximum Operating Temperature Shape Maximum Threshold Current Minimum Operating Temperature Nominal Output Power Additional Features Spectral Bandwidth JESD-609 Code Maximum Forward Voltage
LASERDISPLPL90AHPSA1 by Infineon Technologies

LASERDISPLPL90AHPSA1

Infineon Technologies

LASER DIODE;

LASER DIODE

SPLPL90-3 by Infineon Technologies

SPLPL90-3

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 905; Maximum Operating Temperature: 85 Cel; Spectral Bandwidth: 5 m;

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

22 A

905

.00000002 s

Laser Diodes

InGaAs/GaAs

85 Cel

-40 Cel

5 m

e0

24 V

SPLPL90_3 by Osram Opto Semiconductors

SPLPL90_3

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Forward Current: 40 A; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel;

LASER DIODE

THROUGH HOLE MOUNT

TIN

SINGLE

4.9 mm

1

40 A

905

InGaAs/GaAs

85 Cel

CYLINDRICAL

1000 mA

-40 Cel

75000 W

7 m

e3

11 V

OPV300 by Tt Electronics Plc

OPV300

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Peak Wavelength (nm): 850; Spectral Bandwidth: .85 m; Size: 2.54 mm; Maximum Operating Temperature: 70 Cel;

LASER DIODE

RADIAL MOUNT

SINGLE

2.54 mm

1

.012 A

850

70 Cel

ROUND

3 mA

0 Cel

1.1 W

.85 m

2.2 V

SPLLL90_3 by Osram Opto Semiconductors

SPLLL90_3

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: RADIAL MOUNT; Maximum Operating Temperature: 100 Cel; No. of Functions: 1; Configuration: COMPLEX; Peak Wavelength (nm): 905;

LASER DIODE

RADIAL MOUNT

COMPLEX

1

905

.000000013 s

InAIGaAs/GaAs

100 Cel

RECTANGULAR

-40 Cel

AEC-Q101

7 m

54-00164 by Viavi Solutions

54-00164

Viavi Solutions

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 3 m; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel;

LASER DIODE

THROUGH HOLE MOUNT

830

Laser Diodes

50 Cel

-20 Cel

3 m

Q65113A2191 by Osram Opto Semiconductors

Q65113A2191

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 4.5 V; Maximum Operating Temperature: 85 Cel; Packing Method: TR, 7 INCH; Maximum Threshold Current: 900 mA;

LASER DIODE

SURFACE MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1

940

TR, 7 INCH

85 Cel

RECTANGULAR

900 mA

-20 Cel

6500 W

4.5 V

54-00166 by Viavi Solutions

54-00166

Viavi Solutions

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 806; Spectral Bandwidth: 3 m;

LASER DIODE

THROUGH HOLE MOUNT

806

Laser Diodes

50 Cel

-20 Cel

3 m

LNCT28PF01WW by Panasonic

LNCT28PF01WW

Panasonic

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Packing Method: TRAY; Shape: RECTANGULAR;

LASER DIODE

THROUGH HOLE MOUNT

COMMON CATHODE 2 ELEMENTS

1

.18 A

661

TRAY

85 Cel

RECTANGULAR

70 mA

-10 Cel

200 W

3 V

SFH4231 by Infineon Technologies

SFH4231

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 920; Minimum Operating Temperature: -40 Cel;

LASER DIODE

SURFACE MOUNT

Tin/Lead (Sn/Pb)

1 A

920

Laser Diodes

85 Cel

-40 Cel

1 m

e0

3.4 V

V105Q121A-940 by Osram Opto Semiconductors

V105Q121A-940

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: SURFACE MOUNT; Shape: RECTANGULAR; No. of Functions: 1; Minimum Operating Temperature: -20 Cel; Maximum Threshold Current: 700 mA;

LASER DIODE

SURFACE MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1

940

TR, 7 INCH

85 Cel

RECTANGULAR

700 mA

-20 Cel

3000 W

2.45 V

OPV314Y by Tt Electronics Plc

OPV314Y

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Forward Voltage: 2.2 V; Maximum Operating Temperature: 70 Cel; No. of Functions: 1;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1.27 mm

1

.012 A

850

70 Cel

ROUND

3 mA

0 Cel

1.1 W

.85 m

2.2 V

OPV322 by Tt Electronics Plc

OPV322

Tt Electronics Plc

LASER DIODE; Minimum Operating Temperature: 0 Cel; Maximum Threshold Current: 3 mA; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Configuration: SINGLE;

LASER DIODE

SINGLE

1.52 mm

1

850

85 Cel

ROUND

3 mA

0 Cel

PLT5520B by Osram Opto Semiconductors

PLT5520B

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: RADIAL MOUNT; Terminal Finish: GOLD NICKEL; Spectral Bandwidth: 1 m; Shape: ROUND; Peak Wavelength (nm): 520;

LASER DIODE

RADIAL MOUNT

GOLD NICKEL

SINGLE WITH BUILT-IN PHOTO DIODE

3.55 mm

1

.33 A

520

TRAY

60 Cel

ROUND

90 mA

-20 Cel

110 W

1 m

e4

7.3 V

PLT5520_B1-3 by Osram Opto Semiconductors

PLT5520_B1-3

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.55 mm; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 65 mA; Minimum Operating Temperature: -20 Cel;

LASER DIODE

THROUGH HOLE MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

3.55 mm

1

.14 A

520

TRAY

60 Cel

ROUND

65 mA

-20 Cel

50 W

1 m

PLT5520_B1_2_3 by Osram Opto Semiconductors

PLT5520_B1_2_3

Osram Opto Semiconductors

LASER DIODE; Terminal Finish: MATTE TIN OVER NICKEL; Size: 3.55 mm; JESD-609 Code: e3; Minimum Operating Temperature: -20 Cel; Maximum Threshold Current: 75 mA;

LASER DIODE

MATTE TIN OVER NICKEL

SINGLE WITH BUILT-IN PHOTO DIODE

3.55 mm

1

60 Cel

ROUND

75 mA

-20 Cel

50 W

e3

PLT5520_B4_5_6 by Osram Opto Semiconductors

PLT5520_B4_5_6

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN OVER NICKEL; Nominal Output Power: 30 W; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 520;

LASER DIODE

RADIAL MOUNT

TIN OVER NICKEL

SINGLE WITH BUILT-IN PHOTO DIODE

3.55 mm

1

.2 A

520

60 Cel

ROUND

75 mA

-20 Cel

30 W

2 m

e3

8 V

Q65112A6166 by Osram Opto Semiconductors

Q65112A6166

Osram Opto Semiconductors

LASER DIODE; Terminal Finish: GOLD; Peak Wavelength (nm): 905; JESD-609 Code: e4; Shape: RECTANGULAR; No. of Functions: 1;

LASER DIODE

GOLD

SINGLE

2.3 mm

1

905

105 Cel

RECTANGULAR

-40 Cel

AEC-Q102

e4

54-00152 by Viavi Solutions

54-00152

Viavi Solutions

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 3 m; Peak Wavelength (nm): 810; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE

THROUGH HOLE MOUNT

810

Laser Diodes

50 Cel

-20 Cel

3 m

CVN63-90ECL by Osi Laser Diode

CVN63-90ECL

Osi Laser Diode

LASER DIODE; Mounting Feature: RADIAL MOUNT; No. of Functions: 1; Shape: ROUND; Configuration: SINGLE; Spectral Bandwidth: 8 m;

LASER DIODE

RADIAL MOUNT

SINGLE

2.2 mm

1

ROUND

8 m

HFE4081-321 by Honeywell Sensing And Control

HFE4081-321

Honeywell Sensing And Control

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .02 A; Maximum Forward Voltage: 2.2 V; Spectral Bandwidth: 850000 m; Peak Wavelength (nm): 860;

LASER DIODE

THROUGH HOLE MOUNT

.02 A

860

Laser Diodes

70 Cel

0 Cel

850000 m

2.2 V

OPV310 by Tt Electronics Plc

OPV310

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Shape: ROUND; Maximum Forward Current: .012 A; Nominal Output Power: 1.1 W; Minimum Operating Temperature: 0 Cel;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

2.54 mm

1

.012 A

850

70 Cel

ROUND

3 mA

0 Cel

1.1 W

.85 m

2.2 V

OPV310Y by Tt Electronics Plc

OPV310Y

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Maximum Threshold Current: 3 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Forward Current: .012 A; Minimum Operating Temperature: 0 Cel;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

2.54 mm

1

.012 A

850

70 Cel

ROUND

3 mA

0 Cel

1.1 W

.85 m

2.2 V

OPV314 by Tt Electronics Plc

OPV314

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Maximum Forward Current: .012 A; Maximum Threshold Current: 3 mA; No. of Functions: 1; Maximum Operating Temperature: 70 Cel;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1.27 mm

1

.012 A

850

70 Cel

ROUND

3 mA

0 Cel

1.1 W

.85 m

2.2 V

OPV332 by Tt Electronics Plc

OPV332

Tt Electronics Plc

LASER DIODE; Mounting Feature: RADIAL MOUNT; Nominal Output Power: 1.5 W; Maximum Forward Voltage: 2.2 V; No. of Functions: 1; Size: 3.175 mm;

LASER DIODE

RADIAL MOUNT

SINGLE

3.175 mm

1

850

85 Cel

ROUND

3 mA

0 Cel

1.5 W

2.2 V

PLT5520_B1-6 by Osram Opto Semiconductors

PLT5520_B1-6

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: RADIAL MOUNT; Peak Wavelength (nm): 520; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 65 mA; Maximum Forward Voltage: 6.7 V;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1

.2 A

520

TRAY

60 Cel

ROUND

65 mA

-20 Cel

30 W

6.7 V

LT022MC by Sharp Corporation

LT022MC

Sharp Corporation

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.2 V; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .1 A; Maximum Operating Temperature: 60 Cel;

LASER DIODE

THROUGH HOLE MOUNT

.1 A

780

Laser Diodes

GaAlAs

60 Cel

-10 Cel

2.2 V

RLD78MZA6-00A by ROHM

RLD78MZA6-00A

ROHM

LASER DIODE; Mounting Feature: RADIAL MOUNT; Nominal Output Power: 4.5 W; Maximum Forward Voltage: 2.3 V; Maximum Threshold Current: 50 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1.6 mm

1

.06 A

790

70 Cel

ROUND

50 mA

-10 Cel

4.5 W

2.3 V

GH0401FA2K by Sharp Corporation

GH0401FA2K

Sharp Corporation

LASER DIODE; Mounting Feature: RADIAL MOUNT; Maximum Forward Current: .13 A; Minimum Operating Temperature: -10 Cel; Shape: ROUND; Nominal Output Power: 150 W;

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1

.13 A

405

75 Cel

ROUND

40 mA

-10 Cel

150 W

5 V

GH0631IA2GC by Sharp Corporation

GH0631IA2GC

Sharp Corporation

LASER DIODE; Mounting Feature: RADIAL MOUNT; Maximum Forward Voltage: 2.55 V; Configuration: SINGLE; Maximum Threshold Current: 70 mA; No. of Functions: 1;

LASER DIODE

RADIAL MOUNT

SINGLE

1

.215 A

638

60 Cel

ROUND

70 mA

-10 Cel

180 W

2.55 V

TOLD9221M by Toshiba

TOLD9221M

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .065 A; JESD-609 Code: e0; Maximum Operating Temperature: 60 Cel;

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

.065 A

670

Laser Diodes

GaAlInP

60 Cel

-10 Cel

e0

DL-4038-026 by Onsemi

DL-4038-026

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.6 V; Peak Wavelength (nm): 635; Maximum Forward Current: .085 A; Maximum Operating Temperature: 40 Cel;

LASER DIODE

THROUGH HOLE MOUNT

.085 A

635

Laser Diodes

40 Cel

-10 Cel

2.6 V

DL-3149-070 by Onsemi

DL-3149-070

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 695; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;

LASER DIODE

THROUGH HOLE MOUNT

695

Laser Diodes

AlGaInP

60 Cel

-10 Cel

SDL5033-101 by Onsemi

SDL5033-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE

THROUGH HOLE MOUNT

875

Laser Diodes

GaAlAs

50 Cel

-10 Cel

SDL7032-001 by Onsemi

SDL7032-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel; Semiconductor Material: GaAlAs; Minimum Operating Temperature: -10 Cel;

LASER DIODE

THROUGH HOLE MOUNT

830

Laser Diodes

GaAlAs

50 Cel

-10 Cel

DL-3147-065 by Onsemi

DL-3147-065

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 650; Maximum Operating Temperature: 70 Cel;

LASER DIODE

THROUGH HOLE MOUNT

.05 A

650

Laser Diodes

70 Cel

-10 Cel

2.6 V

SDL9952-001 by Onsemi

SDL9952-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE

THROUGH HOLE MOUNT

830

Laser Diodes

GaAlAs

50 Cel

-10 Cel

DL3147-261 by Onsemi

DL3147-261

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 660; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;

LASER DIODE

THROUGH HOLE MOUNT

660

Laser Diodes

AlGaInP

70 Cel

-10 Cel

SDL3140-211 by Onsemi

SDL3140-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;

LASER DIODE

THROUGH HOLE MOUNT

790

Laser Diodes

60 Cel

-10 Cel

DL4140-001 by Onsemi

DL4140-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .06 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 785; Maximum Operating Temperature: 50 Cel;

LASER DIODE

THROUGH HOLE MOUNT

.06 A

785

Laser Diodes

50 Cel

-10 Cel

SDL3034 by Onsemi

SDL3034

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Peak Wavelength (nm): 780; JESD-609 Code: e0;

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

780

Laser Diodes

GaAlAs

e0

SDL7032-101 by Onsemi

SDL7032-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;

LASER DIODE

THROUGH HOLE MOUNT

830

Laser Diodes

50 Cel

-10 Cel

SDL6032-201 by Onsemi

SDL6032-201

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE

THROUGH HOLE MOUNT

830

Laser Diodes

GaAlAs

50 Cel

-10 Cel

DL-4039-011 by Onsemi

DL-4039-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 685; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;

LASER DIODE

THROUGH HOLE MOUNT

685

Laser Diodes

AlGaInP

50 Cel

-10 Cel

DL-LS1018 by Onsemi

DL-LS1018

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.6 V; Maximum Forward Current: .09 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 675;

LASER DIODE

THROUGH HOLE MOUNT

.09 A

675

Laser Diodes

60 Cel

-10 Cel

2.6 V

SDL8031-101 by Onsemi

SDL8031-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 815;

LASER DIODE

THROUGH HOLE MOUNT

815

Laser Diodes

GaAlAs

50 Cel

-10 Cel

DL-3147-041 by Onsemi

DL-3147-041

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 655; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP;

LASER DIODE

THROUGH HOLE MOUNT

655

Laser Diodes

AlGaInP

60 Cel

-10 Cel

DL-3247-065 by Onsemi

DL-3247-065

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 650;

LASER DIODE

THROUGH HOLE MOUNT

.05 A

650

Laser Diodes

70 Cel

-10 Cel

2.6 V