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Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.

Power Bipolar Junction Transistors (BJT)

Available Parts 2,400+

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard
ULN2803AN by Texas Instruments

ULN2803AN

Texas Instruments

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;

NPN

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

150 Cel

SILICON

50 V

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T18

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-001AC

e4

TIP112 by Texas Instruments

TIP112

Texas Instruments

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): .05 A; Package Style (Meter): FLANGE MOUNT;

NPN

DARLINGTON

NO

50 W

.05 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ULN2803APG by Toshiba

ULN2803APG

Toshiba

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Terminals: 18; Package Style (Meter): IN-LINE;

NPN

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

1000

SILICON

50 V

DUAL

R-PDIP-T18

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

ULN2003ADRG3 by Texas Instruments

ULN2003ADRG3

Texas Instruments

NPN; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 50 V; Terminal Position: DUAL;

NPN

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G16

1

LOGIC LEVEL COMPATIBLE

MS-012AC

e3

NOT SPECIFIED

260

ULN2803ANE4 by Texas Instruments

ULN2803ANE4

Texas Instruments

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;

NPN

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

150 Cel

SILICON

50 V

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T18

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-001AC

e4

BUX87 by NXP Semiconductors

BUX87

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .5 A; Maximum Turn On Time (ton): 500 ns;

NPN

SINGLE

NO

20 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20 W

26

150 Cel

SILICON

450 V

500 ns

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-126

MJE340G by Onsemi

MJE340G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN;

NPN

SINGLE

NO

20 W

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30

150 Cel

SILICON

300 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

HIGH RELIABILITY

TO-225AA

e3

TIP122 by Texas Instruments

TIP122

Texas Instruments

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

NPN

DARLINGTON

NO

65 W

5 A

PLASTIC/EPOXY

SWITCHING

4 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

65 W

1000

150 Cel

SILICON

100 V

1500 ns

8500 ns

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TIP112G by Onsemi

TIP112G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

25 MHz

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

TIP115 by Texas Instruments

TIP115

Texas Instruments

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Case Connection: COLLECTOR;

PNP

DARLINGTON

NO

50 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TIP111G by Onsemi

TIP111G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

TIP117G by Onsemi

TIP117G

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

25 MHz

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

TIP110G by Onsemi

TIP110G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

TIP115G by Onsemi

TIP115G

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

TIP116G by Onsemi

TIP116G

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

MJD127T4G by Onsemi

MJD127T4G

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

-65 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

ULN2003AN by Texas Instruments

ULN2003AN

Texas Instruments

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Terminals: 16; Maximum VCEsat: 1.6 V;

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

THROUGH-HOLE

RECTANGULAR

7

16

IN-LINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDIP-T16

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-001BB

e4

NOT APPLICABLE

NOT APPLICABLE

TIP41C by Texas Instruments

TIP41C

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP41-C by Secos

TIP41-C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

65 W

15

150 Cel

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

SBCP56-16T1G by Onsemi

SBCP56-16T1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

YES

130 MHz

1.5 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

80 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

TO-261AA

e3

30

260

MJD44H11-1G by Onsemi

MJD44H11-1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

NO

50 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

40

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

e3

30

260

MJD127T4 by Onsemi

MJD127T4

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

235

TIP120 by Texas Instruments

TIP120

Texas Instruments

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

NPN

DARLINGTON

NO

65 W

5 A

PLASTIC/EPOXY

SWITCHING

4 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

65 W

1000

150 Cel

SILICON

60 V

1500 ns

8500 ns

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

2N3055 by Texas Instruments

2N3055

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN

SINGLE

NO

2.5 MHz

115 W

15 A

METAL

AMPLIFIER

8 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

115 W

5

200 Cel

SILICON

60 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-3

NOT SPECIFIED

NOT SPECIFIED

MJD122T4G by Onsemi

MJD122T4G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

2N3904T&A by Continental Device India

2N3904T&A

Continental Device India

Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

TIP127 by Texas Instruments

TIP127

Texas Instruments

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;

PNP

DARLINGTON WITH BUILT-IN RESISTOR

NO

65 W

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MJD44H11G by Onsemi

MJD44H11G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

YES

85 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

BU508AW by NXP Semiconductors

BU508AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 7 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

NO

7 MHz

125 W

8 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

125 W

6

150 Cel

SILICON

700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

NJVMJD31CT4G by Onsemi

NJVMJD31CT4G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

NPN

SINGLE

YES

3 MHz

15 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

100 V

-65 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

e3

30

260

AEC-Q101

MJE15034G by Onsemi

MJE15034G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A;

NPN

SINGLE

NO

30 MHz

50 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

350 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

MJD31CT4G by Onsemi

MJD31CT4G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

NPN

SINGLE

YES

3 MHz

15 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

TIP120G by Onsemi

TIP120G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

65 W

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

TIP117 by Texas Instruments

TIP117

Texas Instruments

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE;

PNP

DARLINGTON

NO

50 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

ULN2003APWR by Texas Instruments

ULN2003APWR

Texas Instruments

NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-153AB

e4

NOT SPECIFIED

260

TIP31-C by Secos

TIP31-C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN

SINGLE

NO

3 MHz

40 W

3 A

PLASTIC/EPOXY

SWITCHING

1.2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2 W

10

150 Cel

SILICON

100 V

-65 Cel

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

NOT SPECIFIED

NOT SPECIFIED

TIP31C by Texas Instruments

TIP31C

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN

SINGLE

NO

3 MHz

30 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BCP56-16T1G by Onsemi

BCP56-16T1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

YES

130 MHz

1.5 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

80 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

TIP122G by Onsemi

TIP122G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

65 W

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

MJD44H11T4G by Onsemi

MJD44H11T4G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

YES

85 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

NJVMJD31CT4G-VF01 by Onsemi

NJVMJD31CT4G-VF01

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;

NPN

SINGLE

YES

3 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

10

150 Cel

SILICON

100 V

-65 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101

NJVMJD127T4G by Onsemi

NJVMJD127T4G

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

-65 Cel

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101

MJD122T4 by Onsemi

MJD122T4

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

235

NJVMJD44H11T4G by Onsemi

NJVMJD44H11T4G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

YES

85 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

-55 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101

TIP110 by Texas Instruments

TIP110

Texas Instruments

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

NPN

DARLINGTON

NO

50 W

.05 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP32C by Texas Instruments

TIP32C

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

PNP

SINGLE

NO

3 MHz

40 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP35C by Texas Instruments

TIP35C

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NJVMJD44H11G by Onsemi

NJVMJD44H11G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN

SINGLE

YES

85 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101