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ST26025A

STMicroelectronics

ST26025A by STMicroelectronics

ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,786 parts In-Stock

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5,786

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Digiode

USA . 3,708 parts In-Stock

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3,708

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Anansix

USA . 566 parts In-Stock

1+ parts

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566

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,716 parts In-Stock

1+ parts

$1.704

100+ parts

-

1k+ parts

$1.533

10k+ parts

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1,716

$1.704

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$1.533

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MKK Technologies

India . 842 parts In-Stock

1+ parts

$3.204

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-

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842

$3.204

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DigiPath Technology Company

USA . 842 parts In-Stock

1+ parts

$3.204

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842

$3.204

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AZTECH Wire

Italy . 625 parts In-Stock

1+ parts

$17.470

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625

$17.470

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Ampacity Inc.

Singapore . 374 parts In-Stock

1+ parts

$61.050

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374

$61.050

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Component Stockers USA

USA . 348 parts In-Stock

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$99.990

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348

$99.990

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Corphita

USA . 4,141 parts In-Stock

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4,141

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Alle Elektronik GmbH

Germany . 3,692 parts In-Stock

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3,692

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Parana Technologies

USA . 1,766 parts In-Stock

1+ parts

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$2.037

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1,766

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$2.037

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Perfect Parts

USA . 288 parts In-Stock

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288

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Overview

Enhance your power management solutions with the ST26025A by STMicroelectronics. Crafted with precision and reliability, this Power BJT transistor is designed for high-performance switching applications. With a maximum power dissipation of 160W and a collector current of 20A, this PNP transistor offers exceptional performance. Its Darlington configuration with a built-in diode and resistor ensures seamless operation. Ideal for various industrial and automotive applications, the ST26025A guarantees optimal efficiency and durability. Elevate your projects with this top-tier component from a trusted manufacturer, delivering quality and value in every use.

Feature Benefit Bullets

Package Body Material: METAL

Metal package ensures durability and efficient heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile for various electronic circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor enhance performance and simplify circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in control circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: PIN/PEG

Pin/peg terminals ensure secure connection and easy integration into circuit boards.

Maximum Power Dissipation (Abs): 160 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and ease of mounting in industrial applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient amplification and control in electronic circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand extreme heat conditions without malfunctioning.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for operation in circuits with high voltage requirements.

Transistor Element Material: SILICON

Silicon material provides reliability and stability in performance, ensuring long-lasting functionality.

Maximum Collector Current (IC): 20 A

High collector current rating allows for handling of large current loads in circuit applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish on terminals ensures good conductivity and resistance to corrosion, enhancing the lifespan of the transistor.

Terminal Position: BOTTOM

Bottom terminal position allows for easy connectivity and integration into circuit layouts.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation and electrical connection for reliable performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST26025A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 0.01

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST26025A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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