Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STD878T4
STMicroelectronics
STD878T4 by STMicroelectronics is a NPN Power BJT with 30V VCEO, 5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 70 and matte tin finish.
COLLECTOR
5 A
30 V
SINGLE
70
TO-252
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
15 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
30
SWITCHING
SILICON
2STL2580
2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.
1 A
400 V
60
TO-92
O-PBCY-T3
3
ROUND
CYLINDRICAL
1.5 W
NO
THROUGH-HOLE
BOTTOM
STFN42
STFN42 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1A IC, and 1.4W power dissipation. It's used for switching applications in a small outline package with matte tin terminals, operating up to 150 °C.
5
R-PSSO-F3
1.4 W
Matte Tin (Sn)
FLAT
STX0560
STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.
600 V
ST26025A
ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.
BUILT IN BIAS RESISTANCE RATIO IS 0.01
20 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
200
O-MBFM-P2
200 Cel
METAL
FLANGE MOUNT
PNP
160 W
PIN/PEG
TRD136DT4
STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.
3 A
SINGLE WITH BUILT-IN DIODE
10
20 W
TRD236DT4
STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.
4 A
8
35 W
2STD2360T4
2STD2360T4 by STMicroelectronics is a PNP BJT transistor for switching applications. With 3A max collector current, 60V max collector-emitter voltage, and 15W max power dissipation, it operates at up to 150 °C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
60 V
160
130 MHz
2STN2340
2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.
40 V
180
R-PDSO-G4
4
1.6 W
DUAL
100 MHz
2STL2580-AP
2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.
STT13005D-K
STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
2 A
TO-126
R-PSFM-T3
45 W
3STF1640
3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.
6 A
20
SGS112
STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.
ISOLATED
500
e0
50 W
TIN LEAD
2.5 V
BUF460AV
BUF460AV by STMicroelectronics is a NPN BJT transistor with max VCEsat of 2V, IC of 90A, and Pmax of 270W. Ideal for switching applications due to its fast tf of 200ns and high VCEO of 450V. Package style is flange mount with isolated case connection.
90 A
450 V
200 ns
R-XUFM-X3
UNSPECIFIED
270 W
BIP General Purpose Power
NICKEL
UPPER
2 V
BDX53BFP
BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.
8 A
80 V
750
29 W
25 W
BUL213
BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.
HIGH RELIABILITY
16
TO-220AB
60 W
6420 ns
.9 V
BUL138
BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
80 W
70 W
1500 ns
1 V
BUL416
BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.
800 V
110 W
85 W
3 V
BUL58D
BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.
75 W
1980 ns
BULK128D-B
STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.
R-PSIP-T3
IN-LINE
55 W
1.5 V
ESM3030DV
ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.
100 A
300 V
DARLINGTON WITH BUILT-IN DIODE
600 ns
R-XUFM-X4
225 W
2.2 V
ESM2012DV
ESM2012DV by STMicroelectronics is an NPN BJT with a Darlington configuration and built-in diode, ideal for switching applications. It has a max VCEsat of 2V, can handle a collector current of 120A, and dissipate up to 175W. With an operating temperature of 150 °C, it's suitable for high-power industrial applications.
120 A
125 V
300 ns
175 W
ESM2030DV
ESM2030DV by STMicroelectronics is an NPN BJT transistor with a Darlington configuration and built-in diode, ideal for switching applications. It features a max VCEsat of 2.2V, max IC of 67A, and can handle up to 150W power dissipation. With a max operating temperature of 150 °C and collector-emitter voltage of 300V, it is suitable for high-power electronic circuits.
67 A
150 W
BULT118
STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.
40 W
4900 ns
BUT30V
STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.
250 W
2200 ns
SGSD100
STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.
25 A
300
TO-247
130 W
TIN
3.5 V
SGSD200
SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.
BUL39D
BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.
1600 ns
1.1 V
BUL128
BUL128 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1.5V, IC of 4A, and hFE of 10. It is used for switching applications in circuits requiring up to 60W power dissipation. The device operates at a max temperature of 150 °C and has a collector-emitter voltage rating of 400V.
3400 ns
BUF420M
BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.
30 A
TO-3
200 W
.1 MHz
3620 ns
TIP122FP
TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
1000
2 W
BUL1403ED
BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.
650 V
BUL903ED
BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.
ST1802HI
ST1802HI by STMicroelectronics is a NPN BJT transistor with 600V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications due to its single configuration and isolated case connection in a rectangular package.
10 A
BU808DFI
BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.
700 V
TO-218
NOT SPECIFIED
52 W
3800 ns
1.6 V
BU941ZTFP
BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.
15 A
350 V
175 Cel
AMPLIFIER
BU941ZT
STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.
180 W
BULD118D-1
BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.
TO-251AA
BUB941ZT
STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.
TO-263AB
245
Matte Tin (Sn) - annealed
1.8 V
BUL128FP
BUL128FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 4A IC, and 31W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and matte tin terminal finish.
14
31 W
BUL138FP
BUL138FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 33W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals.
33 W
BUL89
BUL89 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
12 A
STX112-AP
STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
O-PBCY-W3
1.2 W
WIRE
STX112
STX112 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a collector current of 2A, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic devices.
ST2408HI
ST2408HI by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
6
STD127DT4
STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
MD1802FX
MD1802FX by STMicroelectronics is a NPN BJT transistor with 700V VCEO, 10A IC, and 57W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability in a rectangular package. Operates up to 150 °C with isolated case connection for reliable performance.
5.5
57 W
2STF2220
2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.
1.5 A
20 V
75
© 2023 All rights reserved