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STMicroelectronics Power Bipolar Junction Transistors (BJT) 194

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STD878T4 by STMicroelectronics

STD878T4

STMicroelectronics

STD878T4 by STMicroelectronics is a NPN Power BJT with 30V VCEO, 5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 70 and matte tin finish.

COLLECTOR

5 A

30 V

SINGLE

70

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2STL2580 by STMicroelectronics

2STL2580

STMicroelectronics

2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.

1 A

400 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STFN42 by STMicroelectronics

STFN42

STMicroelectronics

STFN42 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1A IC, and 1.4W power dissipation. It's used for switching applications in a small outline package with matte tin terminals, operating up to 150 °C.

COLLECTOR

1 A

400 V

SINGLE

5

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

STX0560 by STMicroelectronics

STX0560

STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

1 A

600 V

SINGLE

70

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

ST26025A by STMicroelectronics

ST26025A

STMicroelectronics

ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.

BUILT IN BIAS RESISTANCE RATIO IS 0.01

COLLECTOR

20 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

160 W

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

TRD136DT4 by STMicroelectronics

TRD136DT4

STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

3 A

400 V

SINGLE WITH BUILT-IN DIODE

10

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

20 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

TRD236DT4 by STMicroelectronics

TRD236DT4

STMicroelectronics

STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

35 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

2STD2360T4 by STMicroelectronics

2STD2360T4

STMicroelectronics

2STD2360T4 by STMicroelectronics is a PNP BJT transistor for switching applications. With 3A max collector current, 60V max collector-emitter voltage, and 15W max power dissipation, it operates at up to 150 °C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2STL2580-AP by STMicroelectronics

2STL2580-AP

STMicroelectronics

2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.

1 A

SINGLE

60

1

150 Cel

NPN

1.5 W

Other Transistors

NO

STT13005D-K by STMicroelectronics

STT13005D-K

STMicroelectronics

STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

SGS112 by STMicroelectronics

SGS112

STMicroelectronics

STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.

ISOLATED

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2.5 V

BUF460AV by STMicroelectronics

BUF460AV

STMicroelectronics

BUF460AV by STMicroelectronics is a NPN BJT transistor with max VCEsat of 2V, IC of 90A, and Pmax of 270W. Ideal for switching applications due to its fast tf of 200ns and high VCEO of 450V. Package style is flange mount with isolated case connection.

ISOLATED

90 A

450 V

SINGLE

200 ns

R-XUFM-X3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

270 W

270 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2 V

BDX53BFP by STMicroelectronics

BDX53BFP

STMicroelectronics

BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.

ISOLATED

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

29 W

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 V

BUL213 by STMicroelectronics

BUL213

STMicroelectronics

BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.

HIGH RELIABILITY

3 A

600 V

SINGLE

16

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

6420 ns

.9 V

BUL138 by STMicroelectronics

BUL138

STMicroelectronics

BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

HIGH RELIABILITY

5 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1500 ns

1 V

BUL416 by STMicroelectronics

BUL416

STMicroelectronics

BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.

6 A

800 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

85 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 V

BUL58D by STMicroelectronics

BUL58D

STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

8 A

450 V

SINGLE WITH BUILT-IN DIODE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

85 W

75 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1980 ns

2 V

BULK128D-B by STMicroelectronics

BULK128D-B

STMicroelectronics

STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

55 W

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1.5 V

ESM3030DV by STMicroelectronics

ESM3030DV

STMicroelectronics

ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.

ISOLATED

100 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

225 W

225 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V

ESM2012DV by STMicroelectronics

ESM2012DV

STMicroelectronics

ESM2012DV by STMicroelectronics is an NPN BJT with a Darlington configuration and built-in diode, ideal for switching applications. It has a max VCEsat of 2V, can handle a collector current of 120A, and dissipate up to 175W. With an operating temperature of 150 °C, it's suitable for high-power industrial applications.

ISOLATED

120 A

125 V

DARLINGTON WITH BUILT-IN DIODE

300 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

175 W

175 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2 V

ESM2030DV by STMicroelectronics

ESM2030DV

STMicroelectronics

ESM2030DV by STMicroelectronics is an NPN BJT transistor with a Darlington configuration and built-in diode, ideal for switching applications. It features a max VCEsat of 2.2V, max IC of 67A, and can handle up to 150W power dissipation. With a max operating temperature of 150 °C and collector-emitter voltage of 300V, it is suitable for high-power electronic circuits.

ISOLATED

67 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

150 W

150 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V

BULT118 by STMicroelectronics

BULT118

STMicroelectronics

STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.

2 A

400 V

SINGLE

8

TO-126

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

40 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4900 ns

1.5 V

BUT30V by STMicroelectronics

BUT30V

STMicroelectronics

STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.

ISOLATED

100 A

125 V

SINGLE

200 ns

R-XUFM-X3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

250 W

250 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2200 ns

.9 V

SGSD100 by STMicroelectronics

SGSD100

STMicroelectronics

STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

130 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3.5 V

SGSD200 by STMicroelectronics

SGSD200

STMicroelectronics

SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3.5 V

BUL39D by STMicroelectronics

BUL39D

STMicroelectronics

BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.

4 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1600 ns

1.1 V

BUL128 by STMicroelectronics

BUL128

STMicroelectronics

BUL128 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1.5V, IC of 4A, and hFE of 10. It is used for switching applications in circuits requiring up to 60W power dissipation. The device operates at a max temperature of 150 °C and has a collector-emitter voltage rating of 400V.

HIGH RELIABILITY

4 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3400 ns

1.5 V

BUF420M by STMicroelectronics

BUF420M

STMicroelectronics

BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.

COLLECTOR

30 A

450 V

SINGLE

TO-3

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

.1 MHz

3620 ns

2 V

TIP122FP by STMicroelectronics

TIP122FP

STMicroelectronics

TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.

ISOLATED

5 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL1403ED by STMicroelectronics

BUL1403ED

STMicroelectronics

BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.

3 A

650 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL903ED by STMicroelectronics

BUL903ED

STMicroelectronics

BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.

5 A

400 V

SINGLE WITH BUILT-IN DIODE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST1802HI by STMicroelectronics

ST1802HI

STMicroelectronics

ST1802HI by STMicroelectronics is a NPN BJT transistor with 600V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications due to its single configuration and isolated case connection in a rectangular package.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BU808DFI by STMicroelectronics

BU808DFI

STMicroelectronics

BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.

ISOLATED

8 A

700 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

60

TO-218

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

52 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

3800 ns

1.6 V

BU941ZTFP by STMicroelectronics

BU941ZTFP

STMicroelectronics

BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.

ISOLATED

15 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BU941ZT by STMicroelectronics

BU941ZT

STMicroelectronics

STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.

COLLECTOR

15 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

180 W

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 V

BULD118D-1 by STMicroelectronics

BULD118D-1

STMicroelectronics

BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.

HIGH RELIABILITY

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4900 ns

1.5 V

BUB941ZT by STMicroelectronics

BUB941ZT

STMicroelectronics

STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

15 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

150 W

150 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

1.8 V

BUL128FP by STMicroelectronics

BUL128FP

STMicroelectronics

BUL128FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 4A IC, and 31W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and matte tin terminal finish.

ISOLATED

4 A

400 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

31 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL138FP by STMicroelectronics

BUL138FP

STMicroelectronics

BUL138FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 33W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals.

ISOLATED

5 A

400 V

SINGLE

8

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

33 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL89 by STMicroelectronics

BUL89

STMicroelectronics

BUL89 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STX112-AP by STMicroelectronics

STX112-AP

STMicroelectronics

STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

BUILT IN BIAS RESISTANCE RATIO IS 0.0067

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.2 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

STX112 by STMicroelectronics

STX112

STMicroelectronics

STX112 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a collector current of 2A, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic devices.

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.2 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

ST2408HI by STMicroelectronics

ST2408HI

STMicroelectronics

ST2408HI by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

12 A

600 V

SINGLE

6

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STD127DT4 by STMicroelectronics

STD127DT4

STMicroelectronics

STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-252

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

MD1802FX by STMicroelectronics

MD1802FX

STMicroelectronics

MD1802FX by STMicroelectronics is a NPN BJT transistor with 700V VCEO, 10A IC, and 57W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability in a rectangular package. Operates up to 150 °C with isolated case connection for reliable performance.

ISOLATED

10 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

57 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STF2220 by STMicroelectronics

2STF2220

STMicroelectronics

2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.

COLLECTOR

1.5 A

20 V

SINGLE

75

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

1.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON