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STMicroelectronics Power Bipolar Junction Transistors (BJT) 194

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STA1962 by STMicroelectronics

2STA1962

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

30 MHz

2STC5242 by STMicroelectronics

2STC5242

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STW1693 by STMicroelectronics

2STW1693

STMicroelectronics

2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.

6 A

80 V

SINGLE

50

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

STH13009 by STMicroelectronics

STH13009

STMicroelectronics

STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

11

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

100 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL128DNFP by STMicroelectronics

STL128DNFP

STMicroelectronics

STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

ISOLATED

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

28 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL128DN by STMicroelectronics

STL128DN

STMicroelectronics

STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

40 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STN878 by STMicroelectronics

STN878

STMicroelectronics

STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.

COLLECTOR

5 A

30 V

SINGLE

70

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

TR136 by STMicroelectronics

TR136

STMicroelectronics

TR136 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 10. Its through-hole design ensures easy integration in various electronic circuits.

3 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TR236 by STMicroelectronics

TR236

STMicroelectronics

TR236 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

70 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216-1 by STMicroelectronics

BULB7216-1

STMicroelectronics

BULB7216-1 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance power management solutions.

3 A

700 V

SINGLE

4

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216T4 by STMicroelectronics

BULB7216T4

STMicroelectronics

BULB7216T4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for compact electronic designs with surface mount capabilities.

3 A

700 V

SINGLE

4

TO-263AB

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2STA2121 by STMicroelectronics

2STA2121

STMicroelectronics

2STA2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STA2510 by STMicroelectronics

2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

BULB742C-1 by STMicroelectronics

BULB742C-1

STMicroelectronics

BULB742C-1 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 70W, a collector-emitter voltage of 400V, and operates up to 150 °C. This versatile transistor is ideal for various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE

25

TO-262AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD1803DFP by STMicroelectronics

MD1803DFP

STMicroelectronics

MD1803DFP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD2103DFP by STMicroelectronics

MD2103DFP

STMicroelectronics

MD2103DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 38 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

6 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

6.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

38 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STBV32G-AP by STMicroelectronics

STBV32G-AP

STMicroelectronics

STBV32G-AP by STMicroelectronics is a single NPN BJT designed for efficient switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Ideal for various electronic circuits requiring reliable performance.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV32G by STMicroelectronics

STBV32G

STMicroelectronics

STBV32G by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STE07DE220 by STMicroelectronics

STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

ISOLATED

7 A

SINGLE WITH BUILT-IN FET AND DIODE

R-XUFM-X4

1

4

125 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

220 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STW3040 by STMicroelectronics

STW3040

STMicroelectronics

STW3040 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 160 W, operates up to 150 °C, and supports collector-emitter voltages of 400 V. Ideal for high-performance electronic circuits.

30 A

400 V

SINGLE

10

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

160 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TIP35CP by STMicroelectronics

TIP35CP

STMicroelectronics

TIP35CP by STMicroelectronics is a NPN Power BJT with 125W power dissipation, 100V max. collector-emitter voltage, and 25A max. collector current. It is used in applications requiring high-power amplification or switching such as audio amplifiers and power supplies due to its robust design and high operating temperature of 150°C.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP36CP by STMicroelectronics

TIP36CP

STMicroelectronics

TIP36CP by STMicroelectronics is a PNP BJT with 125W power dissipation, 100V max collector-emitter voltage, and 25A max collector current. Ideal for high-power applications requiring a single configuration transistor in a rectangular package with through-hole terminals.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

STL106D by STMicroelectronics

STL106D

STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

1.5 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STD845DN40 by STMicroelectronics

STD845DN40

STMicroelectronics

STD845DN40 from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures efficient performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

BULT106D by STMicroelectronics

BULT106D

STMicroelectronics

BULT106D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 230 V, a power dissipation of 32 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

2 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

32 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STBV32-AP by STMicroelectronics

STBV32-AP

STMicroelectronics

STBV32-AP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.1W, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in various circuits.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STK13003 by STMicroelectronics

STK13003

STMicroelectronics

STK13003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULK128 by STMicroelectronics

BULK128

STMicroelectronics

BULK128 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for robust electronic designs requiring efficient performance.

4 A

400 V

SINGLE

14

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STT13005D by STMicroelectronics

STT13005D

STMicroelectronics

STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT70W by STMicroelectronics

BUT70W

STMicroelectronics

BUT70W by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 125 V. Ideal for high-performance electronic circuits.

125 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUX98APW by STMicroelectronics

BUX98APW

STMicroelectronics

BUX98APW by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 450 V. Ideal for high-performance electronic circuits.

24 A

450 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST1802FH by STMicroelectronics

ST1802FH

STMicroelectronics

ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF715 by STMicroelectronics

STF715

STMicroelectronics

STF715 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max collector-emitter voltage of 80V and a power dissipation of 1.4W. It operates efficiently at up to 150 °C with a min DC current gain (hFE) of 40. This compact surface mount transistor is ideal for various electronic circuits.

1.5 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

50 MHz

STN715 by STMicroelectronics

STN715

STMicroelectronics

STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.

COLLECTOR

1.5 A

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

ST2310DHI by STMicroelectronics

ST2310DHI

STMicroelectronics

ST2310DHI from STMicroelectronics is a robust NPN BJT designed for efficient switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 600V. Ideal for high-performance electronic circuits.

ISOLATED

12 A

600 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STN888 by STMicroelectronics

STN888

STMicroelectronics

STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

5 A

30 V

SINGLE

70

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

STSA851-AP by STMicroelectronics

STSA851-AP

STMicroelectronics

STSA851-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a single configuration in a cylindrical package with matte tin finish. Operating up to 150°C, it offers a min hFE of 30 and dissipation of 1.1W.

5 A

60 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

STSA851 by STMicroelectronics

STSA851

STMicroelectronics

STSA851 by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish for through-hole mounting.

5 A

60 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

ST83003 by STMicroelectronics

ST83003

STMicroelectronics

ST83003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with through-hole mounting.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST93003 by STMicroelectronics

ST93003

STMicroelectronics

ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STN749 by STMicroelectronics

STN749

STMicroelectronics

STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

STD1805-1 by STMicroelectronics

STD1805-1

STMicroelectronics

STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.

5 A

60 V

SINGLE

20

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

15 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

150 MHz

STD1805T4 by STMicroelectronics

STD1805T4

STMicroelectronics

STD1805T4 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector current of 5A, and operates up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.

5 A

60 V

SINGLE

20

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

150 MHz

STN1802 by STMicroelectronics

STN1802

STMicroelectronics

STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.

COLLECTOR

3 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

STSA1805 by STMicroelectronics

STSA1805

STMicroelectronics

STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.

5 A

60 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

ST13007DFP by STMicroelectronics

ST13007DFP

STMicroelectronics

ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.

ISOLATED

8 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD790AT4 by STMicroelectronics

STD790AT4

STMicroelectronics

STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

90

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

ST2310FX by STMicroelectronics

ST2310FX

STMicroelectronics

ST2310FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

7 A

600 V

SINGLE

6.5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON