Loading...

STD790AT4

STMicroelectronics

STD790AT4 by STMicroelectronics

STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,934 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,934

-

-

-

-

Anansix

USA . 225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

225

-

-

-

-

Digiode

USA . 103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

103

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,522 parts In-Stock

1+ parts

$0.807

100+ parts

-

1k+ parts

$0.726

10k+ parts

-

1,522

$0.807

-

$0.726

-

MKK Technologies

India . 325 parts In-Stock

1+ parts

$1.517

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$1.517

-

-

-

DigiPath Technology Company

USA . 325 parts In-Stock

1+ parts

$1.517

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$1.517

-

-

-

AZTECH Wire

Italy . 874 parts In-Stock

1+ parts

$9.830

100+ parts

-

1k+ parts

-

10k+ parts

-

874

$9.830

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 27,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,968

-

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Perfect Parts

USA . 11,476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,476

-

-

-

-

Alle Elektronik GmbH

Germany . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,800

-

-

-

-

Corphita

USA . 479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

479

-

-

-

-

Parana Technologies

USA . 128 parts In-Stock

1+ parts

-

100+ parts

$0.965

1k+ parts

-

10k+ parts

-

128

-

$0.965

-

-

Overview

Elevate your projects with the STD790AT4 from STMicroelectronics, a reliable PNP power transistor designed for seamless switching applications. Engineered with exceptional quality standards, this compact device delivers robust performance, supporting up to 3A of collector current and withstands high temperatures for versatile use in various industries. Trust STMicroelectronics for innovation and reliability that empowers your designs with efficiency and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures resilience and protects the internal components, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits where sinking current is required, providing flexibility in design.

Configuration: SINGLE

A single configuration simplifies circuit design and minimizes space requirements on PCBs.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor delivers fast response times and efficient operation in control systems.

Surface Mount: YES

Surface mount capability facilitates automated assembly, reducing manufacturing costs and improving efficiency.

Package Shape: RECTANGULAR

The rectangular package shape provides effective space utilization on boards, allowing for compact designs.

Terminal Form: GULL WING

Gull wing terminals enhance solderability and provide robust mechanical support in mounted applications.

No. of Terminals: 2

The simplicity of a 2-terminal design makes it easy to use, reducing the complexity of circuit connections.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15W, this transistor can efficiently handle high power loads, ensuring reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for high-density PCB layouts, making it ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 90

A minimum DC current gain of 90 ensures robust amplification capabilities for effective signal processing.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor is suitable for use in harsh environments without performance degradation.

Maximum Collector-Emitter Voltage: 30 V

A maximum collector-emitter voltage of 30V enables versatile applications in power management and signal amplification circuits.

Transistor Element Material: SILICON

Silicon material enhances reliability and performance, making the transistor immune to certain environmental factors.

Maximum Collector Current (IC): 3 A

The capability to handle a maximum collector current of 3A makes this transistor suitable for power switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish improves solderability while preventing oxidation, ensuring long-term reliability and performance.

Terminal Position: SINGLE

Single terminal positioning simplifies the design layout, making it easier to integrate into various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time at peak reflow temperature of 30 seconds ensures compatibility with standard reflow soldering processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C enables use with lead-free solder, ensuring compliance with modern environmental standards.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz allows for high-speed switching and signal processing applications, ensuring effective performance in communication systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD790AT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STD790AT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2