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2N3055H

Onsemi

2N3055H by Onsemi

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.

Median Price

$3.091

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Nova Conductors

Japan . 100 parts In-Stock

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TEDSS.com

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Chip Stock

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ComSIT USA

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ComSIT Distribution GmbH

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Bristol Electronics

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Digiode

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Vyrian

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Sogenti Electronics

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Electronic Expediters

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ECAB

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Euro-Tech

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Mil-Aero Solutions, Inc.

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Component Sense

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Fibra_Brandt Electronic GMBH

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LittleDiode

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A2Z Electronics, Inc.

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Corel Iberica Componentes, S.L.

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Manotoh

Italy . 5 parts In-Stock

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ABC Electronics Ltd.

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Sinequanon

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Aztec Data Supply Inc.

USA . 1,589 parts In-Stock

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$0.401

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Argo Parts USA

USA . 4,091 parts In-Stock

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$1.182

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Continental Prestige Electronics

USA . 1,600 parts In-Stock

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$1.158

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.183

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$1.124

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$1.124

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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$1.312

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$1.299

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$1.260

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Corohmni

South Africa . 110 parts In-Stock

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AZTECH Wire

Italy . 638 parts In-Stock

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Semicontronic

India . 507 parts In-Stock

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Component Stockers USA

USA . 774 parts In-Stock

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Kulean Microsystems

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

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Glotronic Ltd.

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Netroflash

USA . 500 parts In-Stock

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Corphita

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Robosynatics

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Lucentia Tech

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UHIMA Technologies

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TANS Electronics

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Schahn Electronic Components

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A-Plus Industry Inc.

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Overview

Unleash the power of innovation with the 2N3055H from Onsemi. Designed to deliver top-notch performance, this Power Bipolar Junction Transistor is a game-changer in the world of electronic components. With a maximum power dissipation of 115W and a maximum collector current of 15A, this NPN transistor is perfect for switching applications. Trust in Onsemi's reputation for excellence and experience seamless functionality with the 2N3055H. Elevate your projects to new heights with this high-quality component that offers unmatched value and reliability.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better thermal conductivity, improving the overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making them versatile for a variety of circuit designs.

Maximum Power Dissipation (Abs): 115 W

High power dissipation allows the transistor to handle large amounts of power without overheating, ensuring durability and reliability in demanding applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures efficient amplification of the input signal, making this transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating enables this transistor to be used in circuits with higher voltages, expanding its application range.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it ideal for power switching applications.

Nominal Transition Frequency (fT): 2.5 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications such as RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3055H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3055H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-367-1638, 5961143671638, 5961-01-122-6512, 5961011226512, 5961-99-661-0257, 5961996610257, 5961-00-102-5802, 5961001025802

NIIN

143671638, 011226512, 996610257, 001025802

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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