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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 2,400+

Part RoHS Manufacturer Description RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency
SPF5043Z by Qorvo

SPF5043Z

Qorvo

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 25 dBm;

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

GAAS

1

25 dBm

54 mA

COMPONENT

5

SOT-143R

50 ohm

RF/Microwave Amplifiers

85 Cel

11.4 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

4000 MHz

SPF-5043Z by Sirenza Microdevices

SPF-5043Z

Sirenza Microdevices

WIDE BAND LOW POWER; Maximum Input Power (CW): 25 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 4000 MHz; Gain: 6.7 dB;

WIDE BAND LOW POWER

25 dBm

COMPONENT

50 ohm

85 Cel

6.7 dB

-40 Cel

100 MHz

4000 MHz

SPF5122ZSR by Qorvo

SPF5122ZSR

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: SOLCC8,.08,20;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27 dBm

99 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

11.2 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

4000 MHz

MAX2659ELT+T by Analog Devices

MAX2659ELT+T

Analog Devices

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Power Supplies (V): 1.8/3;

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

5.6 mA

1.8/3

SOLCC6,.04,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

GOLD NICKEL

e4

BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Power Supplies (V): 1.8;

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

COMPONENT

1.8

SOLCC6,.04,20

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-40 Cel

TIN

e3

1559 MHz

1610 MHz

TQP3M9028 by Qorvo

TQP3M9028

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

23 dBm

100 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

13 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

50 MHz

4000 MHz

BGA824N6E6327XTSA1 by Infineon Technologies

BGA824N6E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Maximum Operating Frequency: 1615 MHz;

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

17 dB

-40 Cel

TIN

e3

1550 MHz

1615 MHz

TQP3M9009 by Qorvo

TQP3M9009

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 23 dBm;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

23 dBm

150 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

50 MHz

4000 MHz

SBB5089ZSR by Qorvo

SBB5089ZSR

Qorvo

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

24 dBm

92 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

14.5 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

6000 MHz

SBB5089Z by Qorvo

SBB5089Z

Qorvo

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

24 dBm

92 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

14.5 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

50 MHz

6000 MHz

SBB-5089Z by Sirenza Microdevices

SBB-5089Z

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

12 dBm

92 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

14.5 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

6000 MHz

HMC903LP3ETR by Analog Devices

HMC903LP3ETR

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 18.5 dB;

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

20 dBm

110 mA

COMPONENT

3.5

LCC16,.12SQ,20

50 ohm

85 Cel

18.5 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

6000 MHz

17000 MHz

SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 50 MHz;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27 dBm

99 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

11.2 dB

-40 Cel

MATTE TIN

e3

50 MHz

4000 MHz

TQP3M9008 by Qorvo

TQP3M9008

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Maximum Supply Current: 100 mA;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

E-PHEMT

1

23 dBm

1.33

100 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

105 Cel

19 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

50 MHz

4000 MHz

SPF5043ZSQ by Qorvo

SPF5043ZSQ

Qorvo

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 25 dBm;

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

GAAS

1

25 dBm

54 mA

COMPONENT

5

SOT-143R

50 ohm

RF/Microwave Amplifiers

85 Cel

11.4 dB

-40 Cel

50 MHz

4000 MHz

SPF5043ZSR by Qorvo

SPF5043ZSR

Qorvo

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

GAAS

1

25 dBm

54 mA

COMPONENT

5

SOT-143R

50 ohm

RF/Microwave Amplifiers

85 Cel

11.4 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

4000 MHz

TQP7M9103 by Qorvo

TQP7M9103

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Supply Current: 260 mA;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

30 dBm

10

260 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

16.6 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

400 MHz

4000 MHz

TGA2567-SM by Qorvo

TGA2567-SM

Qorvo

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 2000 MHz; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 22 dBm; Gain: 17 dB;

WIDE BAND MEDIUM POWER

22 dBm

COMPONENT

50 ohm

85 Cel

17 dB

-40 Cel

2000 MHz

20000 MHz

HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

10 dBm

110 mA

COMPONENT

3.5

LCC16,.12SQ,20

50 ohm

85 Cel

17.5 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

6000 MHz

17000 MHz

MGA-62563-TR1G by Broadcom

MGA-62563-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

2

77 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.4 dB

Tin (Sn)

e3

100 MHz

3000 MHz

HMC1053 by Analog Devices

HMC1053

Analog Devices

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

WIDE BAND HIGH POWER

Gold (Au)

e4

RF5110GTR7 by Qorvo

RF5110GTR7

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; Construction: COMPONENT; Gain: 33 dB;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

HYBRID

1

13 dBm

10

2400 mA

COMPONENT

3.5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

33 dB

-40 Cel

Matte Tin (Sn)

e3

150 MHz

960 MHz

HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 25 dBm; Construction: COMPONENT; Gain: 12 dB; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER

25 dBm

COMPONENT

50 ohm

85 Cel

12 dB

-40 Cel

0 MHz

6000 MHz

TRF37C73IDSGT by Texas Instruments

TRF37C73IDSGT

Texas Instruments

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3.3; Maximum Supply Current: 65 mA;

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

65 mA

COMPONENT

3.3

50 ohm

85 Cel

18 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

1 MHz

6000 MHz

HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

10 dBm

150 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

12.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

5000 MHz

18000 MHz

HMC441LP3ETR by Analog Devices

HMC441LP3ETR

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

115 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

6500 MHz

13500 MHz

ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; Maximum Input Power (CW): 22 dBm;

WIDE BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

PHEMT

1

22 dBm

1.49

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

17 dB

-40 Cel

10 MHz

26500 MHz

BGU8009,115 by NXP Semiconductors

BGU8009,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: SOLCC6,.04,16;

SURFACE MOUNT

6

PLASTIC/EPOXY

1

1.8/2.85

SOLCC6,.04,16

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

RF3827TR7 by Qorvo

RF3827TR7

Qorvo

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

13 dBm

20

130 mA

COMPONENT

8

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

20.5 dB

-40 Cel

LOW NOISE

5 MHz

1500 MHz

HMC608LC4TR by Analog Devices

HMC608LC4TR

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

350 mA

5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

ADL9005ACPZN by Analog Devices

ADL9005ACPZN

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; Maximum Voltage Standing Wave Ratio: 1.49;

WIDE BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

PHEMT

1

22 dBm

1.49

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

17 dB

-40 Cel

10 MHz

26500 MHz

ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Operating Frequency: 1000 MHz;

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

18.1 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

20 MHz

1000 MHz

MGA-62563-BLKG by Broadcom

MGA-62563-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

2

77 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.4 dB

Matte Tin (Sn)

e3

100 MHz

3000 MHz

HMC441LC3BTR by Analog Devices

HMC441LC3BTR

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 15 dBm;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

GAAS

1

15 dBm

115 mA

COMPONENT

5

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

GOLD

e4

6000 MHz

18000 MHz

HMC441LP3E by Analog Devices

HMC441LP3E

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

115 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

6500 MHz

13500 MHz

BGU7007,115 by NXP Semiconductors

BGU7007,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOLCC6,.04,20; Terminal Finish: TIN;

SURFACE MOUNT

6

PLASTIC/EPOXY

1

15.9 mA

1.8

SOLCC6,.04,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

HMC8410LP2FE by Analog Devices

HMC8410LP2FE

Analog Devices

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Maximum Operating Frequency: 10000 MHz; Minimum Operating Frequency: 10 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

10 MHz

10000 MHz

A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;

WIDE BAND LOW POWER

TIN

e3

HMC8410LP2FETR by Analog Devices

HMC8410LP2FETR

Analog Devices

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13 dB

-40 Cel

MATTE TIN

e3

10 MHz

10000 MHz

PMA3-83LNW+ by Mini-circuits

PMA3-83LNW+

Mini-circuits

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; Construction: COMPONENT;

WIDE BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

PHEMT

1

16 dBm

1.13

94 mA

COMPONENT

5/6

50 ohm

105 Cel

16.9 dB

-40 Cel

400 MHz

8000 MHz

MAAM-011290-TR0500 by M/a-com Technology Solutions

MAAM-011290-TR0500

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER;

WIDE BAND MEDIUM POWER

HMC637ALP5E by Analog Devices

HMC637ALP5E

Analog Devices

WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 6000 MHz; Terminal Finish: Matte Tin (Sn) - annealed; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Gain: 12 dB;

WIDE BAND MEDIUM POWER

25 dBm

COMPONENT

50 ohm

85 Cel

12 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

0 MHz

6000 MHz

HMC963LC4TR by Analog Devices

HMC963LC4TR

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

0 dBm

65 mA

COMPONENT

3.5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16.5 dB

-40 Cel

TUNGSTEN NICKEL GOLD

6000 MHz

26500 MHz

MGA-62563-TR2G by Broadcom

MGA-62563-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

2

77 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.4 dB

Matte Tin (Sn)

e3

100 MHz

3000 MHz

HMC326MS8GETR by Analog Devices

HMC326MS8GETR

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 4500 MHz;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

15 dBm

160 mA

COMPONENT

5

TSSOP8,.19

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

3000 MHz

4500 MHz

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Gain: 12 dB; Minimum Operating Frequency: 200 MHz;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

1

25 dBm

7

430 mA

COMPONENT

10

LCC32,.2SQ,20

50 ohm

85 Cel

12 dB

-40 Cel

200 MHz

22000 MHz

HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: LCC32,.2SQ,20; Minimum Operating Frequency: 200 MHz;

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

1

25 dBm

7

430 mA

COMPONENT

10

LCC32,.2SQ,20

50 ohm

85 Cel

12 dB

-40 Cel

200 MHz

22000 MHz

CMPA0060002F1 by Wolfspeed

CMPA0060002F1

Wolfspeed

WIDE BAND HIGH POWER;

WIDE BAND HIGH POWER