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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
BGA622-E6327 by Infineon Technologies

BGA622-E6327

Infineon Technologies

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Temperature: -30 Cel; Package Equivalence Code: SOT-343R; Maximum Operating Temperature: 85 Cel;

1

85 Cel

-30 Cel

PLASTIC/EPOXY

SOT-343R

2.75

RF/Microwave Amplifiers

ACPM-7381-TR1 by Broadcom

ACPM-7381-TR1

Broadcom

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3.4; Maximum Supply Current: 560 mA;

SURFACE MOUNT

1

10

PLASTIC/EPOXY

SOLCC10,.16,32

3.4

RF/Microwave Amplifiers

560 mA

ALM-1612-BLKG by Broadcom

ALM-1612-BLKG

Broadcom

RF/Microwave Amplifiers; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1; Power Supplies (V): 1.8/2.7;

1

12

PLASTIC/EPOXY

MODULE,12LEAD,.13

1.8/2.7

RF/Microwave Amplifiers

11.5 mA

GAAS

ALM-1612-TR1G by Broadcom

ALM-1612-TR1G

Broadcom

RF/Microwave Amplifiers; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1; Package Equivalence Code: MODULE,12LEAD,.13;

1

12

PLASTIC/EPOXY

MODULE,12LEAD,.13

1.8/2.7

RF/Microwave Amplifiers

11.5 mA

GAAS

UPC8240T6N-E2-A by Renesas Electronics

UPC8240T6N-E2-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.06,20

1.8/2.7

RF/Microwave Amplifiers

9 mA

BIPOLAR

CGD1040HI,112 by NXP Semiconductors

CGD1040HI,112

NXP Semiconductors

CGD1040HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 460mA and withstands temperatures from -20 °C to 100 °C. Ideal for demanding RF and microwave tasks, it ensures reliability in various environments.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

HYBRID

CGD1042HI,112 by NXP Semiconductors

CGD1042HI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Maximum Supply Current: 460 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

HYBRID

CGY888C,112 by NXP Semiconductors

CGY888C,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Package Equivalence Code: SOT-115J; Power Supplies (V): 24;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

300 mA

HYBRID

BGU7003,132 by NXP Semiconductors

BGU7003,132

NXP Semiconductors

BGU7003,132 by NXP Semiconductors is a surface-mount RF amplifier designed for robust performance. It operates b/w -40 °C and 85 °C with a supply voltage of 2.5V and max current of 15mA. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,14

2.5

RF/Microwave Amplifiers

15 mA

Tin (Sn)

CGD1044HI,112 by NXP Semiconductors

CGD1044HI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 24; Package Equivalence Code: SOT-115J; No. of Functions: 1; Maximum Supply Current: 460 mA;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

BGA7124,118 by NXP Semiconductors

BGA7124,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOLCC8,.12,20; Maximum Supply Current: 200 mA;

SURFACE MOUNT

1

8

PLASTIC/EPOXY

SOLCC8,.12,20

3.3/5

RF/Microwave Amplifiers

200 mA

MC-7847-KC-AZ by Renesas Electronics

MC-7847-KC-AZ

Renesas Electronics

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: SOT-115J; Power Supplies (V): 24; Maximum Supply Current: 420 mA;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

420 mA

GAAS

MC-7834-KC-AZ by Renesas Electronics

MC-7834-KC-AZ

Renesas Electronics

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 325 mA; Power Supplies (V): 24; No. of Functions: 1;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

325 mA

GAAS

UPC2763TB-E3-A by Renesas Electronics

UPC2763TB-E3-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

RF/Microwave Amplifiers

35 mA

BIPOLAR

BGA7024,135 by NXP Semiconductors

BGA7024,135

NXP Semiconductors

BGA7024,135 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 5V with a max supply current of 125mA and features a plastic/epoxy package. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

125 mA

TIN

BGA7024,115 by NXP Semiconductors

BGA7024,115

NXP Semiconductors

BGA7024,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 5V with a max supply current of 125mA and features a plastic/epoxy package. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

125 mA

TIN

BGA2865,115 by NXP Semiconductors

BGA2865,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Power Supplies (V): 5;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

5

RF/Microwave Amplifiers

29.7 mA

BGU7032,115 by NXP Semiconductors

BGU7032,115

NXP Semiconductors

BGU7032,115 by NXP Semiconductors is a wideband low-power RF amplifier designed for surface mount applications. It operates at a max frequency of 1000 MHz and supports power supplies of 5V, with an operating temp range from -10 °C to 70 °C. Ideal for enhancing signal quality in communication systems.

COMPONENT

e3

SURFACE MOUNT

1

6

1000 MHz

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN

BGA2850,115 by NXP Semiconductors

BGA2850,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Power Supplies (V): 5;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

5

RF/Microwave Amplifiers

10.8 mA

CGD1046HI,112 by NXP Semiconductors

CGD1046HI,112

NXP Semiconductors

CGD1046HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates with a supply voltage of 24V and supports temperatures from -20 °C to 100 °C, drawing up to 465mA. Ideal for demanding RF systems, it ensures reliability in various environments.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

465 mA

HYBRID

BGA7027,115 by NXP Semiconductors

BGA7027,115

NXP Semiconductors

BGA7027,115 by NXP Semiconductors is a surface-mount RF amplifier with a 5V power supply and a max current of 195 mA. It features a plastic/epoxy package and has 3 terminals with tin finish. Ideal for enhancing signal strength in communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

195 mA

TIN

BGA420H6327 by Infineon Technologies

BGA420H6327

Infineon Technologies

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Minimum Operating Temperature: -65 Cel; Power Supplies (V): 3;

1

150 Cel

-65 Cel

PLASTIC/EPOXY

SOT-343R

3

RF/Microwave Amplifiers

8 mA

BIPOLAR

BGA2816,115 by NXP Semiconductors

BGA2816,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Maximum Supply Current: 25.5 mA;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

25.5 mA

BGA2002,115 by NXP Semiconductors

BGA2002,115

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Screening Level: AEC-Q100; JESD-609 Code: e3; No. of Functions: 1;

e3

1

PLASTIC/EPOXY

SOT-343R

2.5

AEC-Q100

RF/Microwave Amplifiers

BIPOLAR

Tin (Sn)

CGY1043,112 by NXP Semiconductors

CGY1043,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Maximum Supply Current: 280 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

CGY1041,112 by NXP Semiconductors

CGY1041,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Power Supplies (V): 24; Maximum Supply Current: 280 mA;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

CGY1032,112 by NXP Semiconductors

CGY1032,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Supply Current: 280 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

UPD5750T7D-E4A-A by Renesas Electronics

UPD5750T7D-E4A-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Power Supplies (V): 1.8;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA6,2X3,10

1.8

RF/Microwave Amplifiers

4.5 mA

BICMOS

BGU7041,115 by NXP Semiconductors

BGU7041,115

NXP Semiconductors

NXP Semiconductors' BGU7041,115 is a RF & Microwave Amplifier with 6 terminals and operates at temperatures from -10°C to 70°C. It has a power supply of 3.3V and uses surface mount technology. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

6

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

Tin (Sn)

CGD987HCI,112 by NXP Semiconductors

CGD987HCI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: SOT-115J; Power Supplies (V): 24; No. of Functions: 1;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

GAAS

ACPM-5007-TR1 by Broadcom

ACPM-5007-TR1

Broadcom

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3.4;

SURFACE MOUNT

1

10

90 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.11,24

3.4

RF/Microwave Amplifiers

500 mA

BIPOLAR

BGU7042,115 by NXP Semiconductors

BGU7042,115

NXP Semiconductors

BGU7042,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 3.3V with a max supply current of 60mA and functions effectively in temperatures ranging from -10 °C to 70 °C. Ideal for wireless communication applications, it ensures reliable signal amplification.

e3

SURFACE MOUNT

1

6

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

60 mA

Tin (Sn)

BGU6104,147 by NXP Semiconductors

BGU6104,147

NXP Semiconductors

BGU6104,147 by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 5 dB and operates b/w 40 MHz and 4000 MHz. It features a compact surface mount design with a max supply current of 40 mA. Ideal for applications in communication systems, it withstands temperatures from -40 °C to 85 °C.

COMPONENT

5 dB

e3

SURFACE MOUNT

1

6

4000 MHz

40 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

40 mA

TIN

BGU7003W,115 by NXP Semiconductors

BGU7003W,115

NXP Semiconductors

BGU7003W,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates b/w -40 °C to 85 °C with a supply voltage of 2.5V and a max current of 15mA. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,20

2.5

RF/Microwave Amplifiers

15 mA

TIN

BGY588C,112 by NXP Semiconductors

BGY588C,112

NXP Semiconductors

BGY588C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 345mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecom and broadcasting systems, it ensures reliable signal amplification.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

345 mA

HYBRID

BGE788C,112 by NXP Semiconductors

BGE788C,112

NXP Semiconductors

BGE788C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 325mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecommunications and broadcasting systems.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

325 mA

HYBRID

BGU7052,118 by NXP Semiconductors

BGU7052,118

NXP Semiconductors

BGU7052,118 by NXP Semiconductors is a surface mount RF amplifier designed for robust performance in various applications. It operates b/w -40 °C and 85 °C with a supply voltage of 3.3V and a max current of 95mA. Ideal for enhancing signal strength in communication systems.

SURFACE MOUNT

1

10

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC10,.12,20

3.3

RF/Microwave Amplifiers

95 mA

BGA2874,115 by NXP Semiconductors

BGA2874,115

NXP Semiconductors

BGA2874,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient signal amplification. It operates at 2.5V with a max supply current of 19mA and features a 6-terminal plastic/epoxy package. Ideal for various RF applications, it ensures reliable performance in compact designs.

e3

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

2.5

RF/Microwave Amplifiers

19 mA

TIN

BGU7053,118 by NXP Semiconductors

BGU7053,118

NXP Semiconductors

BGU7053,118 by NXP Semiconductors is an RF amplifier designed for surface mount applications. It operates b/w -40 °C to 85 °C with a supply voltage of 3.3V and a max current of 110mA. Ideal for enhancing signal strength in communication devices.

SURFACE MOUNT

1

10

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC10,.12,20

3.3

RF/Microwave Amplifiers

110 mA

BGU8007,115 by NXP Semiconductors

BGU8007,115

NXP Semiconductors

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,20

1.8

RF/Microwave Amplifiers

14.7 mA

Tin (Sn)

BGA7130,118 by NXP Semiconductors

BGA7130,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; No. of Functions: 1;

SURFACE MOUNT

1

8

PLASTIC/EPOXY

SOLCC8,.12,20

5

RF/Microwave Amplifiers

550 mA

UPC8232T5N-A by Renesas Electronics

UPC8232T5N-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 4.1 mA;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.06,20

3

RF/Microwave Amplifiers

4.1 mA

BIPOLAR

BLM7G22S-60PB,118 by NXP Semiconductors

BLM7G22S-60PB,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: FL16(UNSPEC); Power Supplies (V): 28;

SURFACE MOUNT

2

16

PLASTIC/EPOXY

FL16(UNSPEC)

28

RF/Microwave Amplifiers

BLM7G22S-60PBG,118 by NXP Semiconductors

BLM7G22S-60PBG,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; Package Equivalence Code: SOP16(UNSPEC);

SURFACE MOUNT

2

16

PLASTIC/EPOXY

SOP16(UNSPEC)

28

RF/Microwave Amplifiers

SST12CP11-QVCE by Microchip Technology

SST12CP11-QVCE

Microchip Technology

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.

SURFACE MOUNT

1

16

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

RF/Microwave Amplifiers

BIPOLAR

UPC1678GV-A by Renesas Electronics

UPC1678GV-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 60 mA;

SURFACE MOUNT

1

8

85 Cel

-45 Cel

PLASTIC/EPOXY

SSOP8,.2

5

RF/Microwave Amplifiers

60 mA

BIPOLAR

BGA3012,115 by NXP Semiconductors

BGA3012,115

NXP Semiconductors

NXP Semiconductors' BGA3012,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features TIN terminal finish, 125mA max supply current, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

3

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

8

RF/Microwave Amplifiers

125 mA

TIN

BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

3

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

8

RF/Microwave Amplifiers

135 mA

TIN