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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
A3M40PD012T7 by NXP Semiconductors

A3M40PD012T7

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 2300 MHz; Power Supplies (V): 3.3;

50 ohm

COMPONENT

30 dB

25 dBm

SURFACE MOUNT

1

12

4200 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND MEDIUM POWER

300 mA

1.38

F1429MBNELI8 by Renesas Electronics

F1429MBNELI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Equivalence Code: LCC12,.08SQ,20; Gain: 18 dB; Construction: COMPONENT;

LOW NOISE

100 ohm

COMPONENT

18 dB

20 dBm

SURFACE MOUNT

1

12

4200 MHz

3000 MHz

115 Cel

-40 Cel

LCC12,.08SQ,20

3.3/5

WIDE BAND LOW POWER

86 mA

1.1

F6922AVRI8 by Renesas Electronics

F6922AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 21200 MHz; Minimum Operating Frequency: 17700 MHz;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6922AVRI by Renesas Electronics

F6922AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI8 by Renesas Electronics

F6923AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI by Renesas Electronics

F6923AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

ADPA1107ACPZN by Analog Devices

ADPA1107ACPZN

Analog Devices

ADPA1107ACPZN by Analog Devices is a GAN technology RF amplifier with 27dB gain, operating b/w 4800-6000MHz. It has a max input power of 31dBm and VSWR of 1.54, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54

ADPA1107ACPZN-R7 by Analog Devices

ADPA1107ACPZN-R7

Analog Devices

ADPA1107ACPZN-R7 by Analog Devices is a GAN technology RF amplifier with 27dB gain, 50 ohm impedance, and 31dBm CW input power. It operates b/w 4800-6000MHz, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS

HMC8413LP2FETR by Analog Devices

HMC8413LP2FETR

Analog Devices

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.

50 ohm

COMPONENT

17 dB

25 dBm

SURFACE MOUNT

1

6

9000 MHz

10 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND MEDIUM POWER

PHEMT

1.29

HMC451-SX by Analog Devices

HMC451-SX

Analog Devices

HMC451-SX by Analog Devices is a GAAS RF amplifier with 15dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.38, ideal for wideband medium power applications. With a compact surface mount construction, it operates b/w -55 to 85 °C making it suitable for various RF & microwave systems.

50 ohm

COMPONENT

15 dB

10 dBm

SURFACE MOUNT

1

4

20000 MHz

5000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

150 mA

GAAS

1.38

UPC2710TB-A by Renesas Electronics

UPC2710TB-A

Renesas Electronics

Renesas Electronics UPC2710TB-A is a wide band low power RF amplifier with 33 dB gain, operating up to 1000 MHz. It has a max input power of 10 dBm and VSWR of 1.67, suitable for RF applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

33 dB

10 dBm

SURFACE MOUNT

1

6

1000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

29 mA

BIPOLAR

1.67

ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.

50 ohm

COMPONENT

18 dB

22 dBm

SURFACE MOUNT

1

8

18000 MHz

6000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

5

WIDE BAND LOW POWER

PHEMT

1.54

TRF1208RPVR by Texas Instruments

TRF1208RPVR

Texas Instruments

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Gain: 16 dB;

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

NICKEL PALLADIUM GOLD

BTS6302UJ by NXP Semiconductors

BTS6302UJ

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 5000 MHz;

50 ohm

COMPONENT

33.8 dB

10 dBm

SURFACE MOUNT

1

16

5000 MHz

2300 MHz

115 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

IEC-60134

120 mA

1.67

HMC462-SX by Analog Devices

HMC462-SX

Analog Devices

HMC462-SX by Analog Devices is a PHEMT technology RF amplifier with 12.5 dB gain, operating from 2-20 GHz. It has a max input power of 18 dBm and VSWR of 1.25, making it ideal for wideband low-power applications in RF and microwave systems. With a compact surface-mount construction and requiring only 5V supply voltage, it offers high performance in a small form factor.

50 ohm

COMPONENT

12.5 dB

18 dBm

SURFACE MOUNT

1

3

20000 MHz

2000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

84 mA

PHEMT

1.25

HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

50 ohm

COMPONENT

16.5 dB

0 dBm

e4

SURFACE MOUNT

1

24

26500 MHz

6000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

3.5

WIDE BAND LOW POWER

65 mA

PHEMT

Gold (Au) - with Nickel (Ni) barrier

1.92

TRF1208RPVT by Texas Instruments

TRF1208RPVT

Texas Instruments

TRF1208RPVT by Texas Instruments is a BICMOS RF amplifier with 16dB gain, operating from 10MHz to 11GHz. It has a max input power of 20dBm and operates on a 3.3V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 105°C.

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

CMX90B702QF-R705 by Cml Microcircuits

CMX90B702QF-R705

Cml Microcircuits

WIDE BAND LOW POWER;

WIDE BAND LOW POWER

CMX90B702QF-R710 by Cml Microcircuits

CMX90B702QF-R710

Cml Microcircuits

WIDE BAND LOW POWER;

WIDE BAND LOW POWER