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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC8120 by Analog Devices

HMC8120

Analog Devices

HMC8120 by Analog Devices is a PHEMT RF amplifier with 19 dB gain, operating b/w 71-76 GHz. It features 28 terminals, 50 ohm impedance, and consumes up to 250 mA at 4 V. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC-C582 by Analog Devices

HMC-C582

Analog Devices

HMC-C582 by Analog Devices is a PHEMT RF amplifier with 16 dB gain, operating from 10 MHz to 20 GHz. It has a max input power of 23 dBm and requires a 15V power supply. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

16 dB

23 dBm

1

4

20000 MHz

10 MHz

75 Cel

-40 Cel

MODULE,4LEAD(UNSPEC)

15

WIDE BAND LOW POWER

900 mA

PHEMT

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

28 dB

24 dBm

e3

SURFACE MOUNT

1

24

14000 MHz

8000 MHz

85 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.2SQ,25

6

WIDE BAND MEDIUM POWER

GAAS

Matte Tin (Sn) - annealed

HMC7543-SX by Analog Devices

HMC7543-SX

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Power Supplies (V): 4; Construction: COMPONENT; Maximum Operating Frequency: 76000 MHz;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

HMC7543 by Analog Devices

HMC7543

Analog Devices

Analog Devices' HMC7543 is a PHEMT RF amplifier with 19 dB gain, operating from 71-76 GHz. It requires a 4V power supply and draws up to 450 mA current. Ideal for wideband medium-power applications in RF and microwave systems, it has a characteristic impedance of 50 ohms and operates b/w -55 °C to +85°C.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

ADL5723ACPZN-R7 by Analog Devices

ADL5723ACPZN-R7

Analog Devices

ADL5723ACPZN-R7 by Analog Devices is a RF amplifier with 24.1 dB gain, operating frequency range of 10.1-11.7 GHz, and characteristic impedance of 100 ohm. It is designed for wide band low power applications in RF & Microwave systems requiring surface mounting feature.

100 ohm

COMPONENT

24.1 dB

SURFACE MOUNT

1

8

11700 MHz

10100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

BIPOLAR

ADL5726ACPZN-R7 by Analog Devices

ADL5726ACPZN-R7

Analog Devices

ADL5726ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with gain of 22.5 dB. It operates b/w 21.2-23.6 GHz, suitable for RF & Microwave applications requiring surface mount package and 100 ohm impedance.

100 ohm

COMPONENT

22.5 dB

SURFACE MOUNT

1

8

23600 MHz

21200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.

HIGH RELIABILITY

50 ohm

COMPONENT

14.5 dB

20 dBm

e4

SURFACE MOUNT

1

24

8000 MHz

3500 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

75 mA

GAAS

GOLD NICKEL

HMC392A by Analog Devices

HMC392A

Analog Devices

Analog Devices' HMC392A is a GAAS RF amplifier with 14.5 dB gain, operating from 3.5 to 7 GHz. It has a max input power of 20 dBm and requires a 5V supply, drawing up to 75 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

14.5 dB

20 dBm

SURFACE MOUNT

1

10

7000 MHz

3500 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

GAAS

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

50 ohm

COMPONENT

11 dB

e3

SURFACE MOUNT

1

32

28000 MHz

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

300 mA

PHEMT

Matte Tin (Sn)

HMC998A by Analog Devices

HMC998A

Analog Devices

Analog Devices' HMC998A is a wide band medium power RF amplifier with 12 dB gain, operating from 0 to 22000 MHz. It can handle up to 27 dBm CW input power and has a max VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

12 dB

27 dBm

22000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC8121-SX by Analog Devices

HMC8121-SX

Analog Devices

Analog Devices' HMC8121-SX is a PHEMT RF amplifier with 19 dB gain, operating b/w 81-86 GHz. Ideal for wide band low power applications, it has a characteristic impedance of 50 ohm and operates from -55 to 85 °C. Suitable for surface mount construction with a 5V power supply requirement.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8121 by Analog Devices

HMC8121

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Temperature: -55 Cel;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8142-SX by Analog Devices

HMC8142-SX

Analog Devices

HMC8142-SX by Analog Devices is a wide band medium power RF amplifier with 19 dB gain. Operating from 81-86 GHz, it has a characteristic impedance of 50 ohm and consumes up to 450 mA at 4 V. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8142 by Analog Devices

HMC8142

Analog Devices

Analog Devices' HMC8142 is a wide band medium power RF amplifier with 19 dB gain, operating from 81-86 GHz. It features E-PHEMT technology, 50 ohm impedance, and consumes up to 450 mA at 4 V. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8410LP2FE by Analog Devices

HMC8410LP2FE

Analog Devices

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

e4

10000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC7229-SX by Analog Devices

HMC7229-SX

Analog Devices

Analog Devices' HMC7229-SX is a wide band medium power RF amplifier with 21.5 dB gain and 50 ohm impedance. It operates b/w 33-40 GHz, handles up to 21 dBm CW input power, and can be used in various RF & microwave applications due to its component construction.

50 ohm

COMPONENT

21.5 dB

21 dBm

40000 MHz

33000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC7229 by Analog Devices

HMC7229

Analog Devices

Analog Devices' HMC7229 is a wide band medium power RF amplifier with 21.5 dB gain and 50 ohm impedance. It operates b/w 33-40 GHz, handling up to 21 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -55 °C to 85°C.

50 ohm

COMPONENT

21.5 dB

21 dBm

40000 MHz

33000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

13 dB

8 dBm

e3

4000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

MATTE TIN

HMC1121LP6GETR by Analog Devices

HMC1121LP6GETR

Analog Devices

HMC1121LP6GETR by Analog Devices is a wide band high power RF amplifier with 25 dB gain and 50 ohm impedance. It operates b/w 5500-8500 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

25 dB

24 dBm

e3

8500 MHz

5500 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

25 dB

24 dBm

e3

8500 MHz

5500 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC8401-SX by Analog Devices

HMC8401-SX

Analog Devices

HMC8401-SX by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating from 10 MHz to 28 GHz. It has a max input power of 20 dBm and requires a 7.5 V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC8401 by Analog Devices

HMC8401

Analog Devices

HMC8401 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 7.5V supply, and 12.5dB gain. Utilizes PHEMT tech for wide band low power applications from 10MHz to 28GHz. With surface mount feature, it operates b/w -55°C to 85°C temperature range.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC1114LP5DETR by Analog Devices

HMC1114LP5DETR

Analog Devices

Analog Devices' HMC1114LP5DETR is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and requires a 28 V power supply, drawing up to 150 mA. This wideband high-power device is ideal for applications requiring surface mount construction in RF and microwave systems.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

MATTE TIN

1.43

HMC1144-SX by Analog Devices

HMC1144-SX

Analog Devices

Analog Devices' HMC1144-SX is a wide band low power RF amplifier with 17 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 35 GHz to 70 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

17 dB

22 dBm

70000 MHz

35000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8400-SX by Analog Devices

HMC8400-SX

Analog Devices

Analog Devices' HMC8400-SX is a wide band low power RF amplifier with 11.5 dB gain, handling up to 23 dBm CW input power. Operating from 2-30 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 °C to 85°C.

50 ohm

COMPONENT

11.5 dB

23 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8402-SX by Analog Devices

HMC8402-SX

Analog Devices

Analog Devices' HMC8402-SX is a wide band low power RF amplifier with 11 dB gain, handling up to 20 dBm CW input power. Operating from -55 °C to 85°C, it spans frequencies from 2-30 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11 dB

20 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8402 by Analog Devices

HMC8402

Analog Devices

Analog Devices' HMC8402 is a wide band low power RF amplifier with 11 dB gain, operating from 2-30 GHz. It can handle up to 20 dBm CW input power and operates b/w -55 °C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.

50 ohm

COMPONENT

11 dB

20 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN

HMC8410CHIPS-SX by Analog Devices

HMC8410CHIPS-SX

Analog Devices

Analog Devices' HMC8410CHIPS-SX is a wide band low power RF amplifier with 13 dB gain and 20 dBm max input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

10000 MHz

10 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8410CHIPS by Analog Devices

HMC8410CHIPS

Analog Devices

Analog Devices' HMC8410CHIPS is a wide band low power RF amplifier with 13 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 °C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

10000 MHz

10 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

HMC7950LS6TR by Analog Devices

HMC7950LS6TR

Analog Devices

Analog Devices' HMC7950LS6TR is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

50 ohm

COMPONENT

13 dB

20 dBm

28000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TUNGSTEN NICKEL GOLD

HMC7950LS6 by Analog Devices

HMC7950LS6

Analog Devices

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

50 ohm

COMPONENT

13 dB

20 dBm

28000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TUNGSTEN NICKEL GOLD

HMC8113 by Analog Devices

HMC8113

Analog Devices

Analog Devices' HMC8113 is a wide band high power RF module with 85 dB gain, operating from 2-6 GHz. It can handle up to 5 dBm CW input power and has a VSWR of 2. Ideal for RF & microwave applications requiring high power amplification in the temperature range of -10 °C to +50°C.

TTL COMPATIBLE

50 ohm

MODULE

85 dB

5 dBm

6000 MHz

2000 MHz

50 Cel

10 Cel

WIDE BAND HIGH POWER

2

HMC8114 by Analog Devices

HMC8114

Analog Devices

HMC8114 by Analog Devices is a wide band high power RF module with 53 dB gain, operating from 5800 MHz to 18000 MHz. It has a max input power of 5 dBm and VSWR of 2, suitable for RF & microwave applications requiring high power amplification in the temperature range of -20 °C to 64°C.

TTL COMPATIBLE

50 ohm

MODULE

53 dB

5 dBm

18000 MHz

5800 MHz

64 Cel

-20 Cel

WIDE BAND HIGH POWER

2

HMC5805ALS6TR by Analog Devices

HMC5805ALS6TR

Analog Devices

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

9 dB

22 dBm

e4

40000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

HMC797ALP5E by Analog Devices

HMC797ALP5E

Analog Devices

HMC797ALP5E by Analog Devices is a GAAS RF amplifier with 11dB gain, operating from 0-22000MHz. It has a max input power of 27dBm and VSWR of 7, suitable for wideband medium power applications. With a compact design and surface mount feature, it operates at temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

11 dB

27 dBm

SURFACE MOUNT

1

32

22000 MHz

0 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

3.5,10

WIDE BAND MEDIUM POWER

440 mA

GAAS

7

HMC797APM5E by Analog Devices

HMC797APM5E

Analog Devices

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

50 ohm

COMPONENT

13 dB

27 dBm

e4

22000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

NICKEL PALLADIUM GOLD

7

HMC797A by Analog Devices

HMC797A

Analog Devices

Analog Devices' HMC797A is a RF & Microwave Amplifier with 27 dBm CW input power, 7 VSWR, and 14 dB gain. Ideal for wide band medium power applications from 0-22000 MHz, it operates b/w -55 to 85 °C with a characteristic impedance of 50 ohm.

50 ohm

COMPONENT

14 dB

27 dBm

22000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC863ALC4 by Analog Devices

HMC863ALC4

Analog Devices

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7