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HMC1121LP6GETR

Analog Devices

HMC1121LP6GETR by Analog Devices

HMC1121LP6GETR by Analog Devices is a wide band high power RF amplifier with 25 dB gain and 50 ohm impedance. It operates b/w 5500-8500 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40 to 85 °C.

Median Price

$88.071

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

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$88.071

10k+ parts

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500

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$88.071

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,421 parts In-Stock

1+ parts

-

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4,421

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Digiode

USA . 607 parts In-Stock

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607

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,532 parts In-Stock

1+ parts

$2.479

100+ parts

-

1k+ parts

$2.306

10k+ parts

-

1,532

$2.479

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$2.306

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IDEA Electronic Components Group

UK . 1 parts In-Stock

1+ parts

$2.666

100+ parts

-

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$2.533

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1

$2.666

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$2.533

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DigiPath Technology Company

USA . 843 parts In-Stock

1+ parts

$4.159

100+ parts

$3.993

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-

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843

$4.159

$3.993

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AZTECH Wire

Italy . 795 parts In-Stock

1+ parts

$19.670

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795

$19.670

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Ampacity Inc.

Singapore . 421 parts In-Stock

1+ parts

$74.860

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421

$74.860

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Semicontronic

India . 52 parts In-Stock

1+ parts

$74.860

100+ parts

$72.988

1k+ parts

$72.614

10k+ parts

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52

$74.860

$72.988

$72.614

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Lixinc

USA . 1,818 parts In-Stock

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1,818

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Corphita

USA . 307 parts In-Stock

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307

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RC Electronics

USA . 300 parts In-Stock

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300

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Overview

Elevate your RF and microwave amplifier game with the HMC1121LP6GETR by Analog Devices. Known for their top-notch quality and reliability, Analog Devices delivers a wide band high power amplifier that offers exceptional performance in various applications. With a gain of 25 dB and a maximum input power of 24 dBm, this component is designed to provide superior functionality and efficiency. Whether you're in the telecommunications, aerospace, or defense industry, this amplifier is sure to elevate your projects to new heights. Trust Analog Devices to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Maximum Input Power (CW) 24 dBm

This high maximum input power allows this amplifier to handle strong input signals without distortion, ensuring reliable performance.

Construction COMPONENT

Being a component-level amplifier, this product can be easily integrated into larger RF systems for customized applications.

Maximum Operating Temperature 85 °C

With a high maximum operating temperature, this amplifier can withstand harsh environmental conditions without performance degradation.

Minimum Operating Temperature -40 °C

The low minimum operating temperature ensures this amplifier can operate in a wide range of temperature environments, making it versatile for various applications.

Terminal Finish MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring reliable connections in the RF system.

RF or Microwave Device Type WIDE BAND HIGH POWER

As a wide band high power amplifier, this product can amplify a broad range of frequencies with high gain, making it suitable for diverse RF applications.

Characteristic Impedance 50 ohm

The 50 ohm characteristic impedance matches standard RF systems, facilitating easy integration and optimal signal transmission.

Gain 25 dB

With a high gain of 25 dB, this amplifier can boost the input signal significantly, ensuring strong output power for communication or testing purposes.

Minimum Operating Frequency 5500 MHz

The low minimum operating frequency allows this amplifier to amplify signals in the higher frequency range, making it suitable for RF applications that require such frequencies.

Maximum Operating Frequency 8500 MHz

The high maximum operating frequency enables this amplifier to handle signals up to 8500 MHz, making it suitable for a wide range of RF applications.

Technical Specifications

RF & Microwave Amplifiers HMC1121LP6GETR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

25 dB

Maximum Input Power (CW):

24 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

8500 MHz

Minimum Operating Frequency:

5500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC1121LP6GETR RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.2.B

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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