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HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

Median Price

$766.430

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Analog Devices Inc

USA . 167 parts In-Stock

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$772.920

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-

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$573.370

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167

$772.920

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$573.370

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DigiKey

USA . 27 parts In-Stock

1+ parts

$855.360

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27

$855.360

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Verical

USA . 65 parts In-Stock

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-

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$624.774

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$624.774

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$624.774

65

-

$624.774

$624.774

$624.774

Richardson RFPD

USA . 1 parts In-Stock

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-

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$759.940

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1

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$759.940

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Distributors (In-Stock)

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Digiode

USA . 813 parts In-Stock

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$678.062

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813

$678.062

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Nova Conductors

Japan . 36 parts In-Stock

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$787.220

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36

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Vyrian

USA . 2,083 parts In-Stock

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2,083

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Distributors (Availability)

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Parana Technologies

USA . 4,025 parts In-Stock

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$1.680

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$1.562

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4,025

$1.680

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$1.562

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Corohmni

South Africa . 27 parts In-Stock

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$1.791

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27

$1.791

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IDEA Electronic Components Group

UK . 1,267 parts In-Stock

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$1.806

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$1.716

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1,267

$1.806

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$1.716

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$2.170

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100

$2.170

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DigiPath Technology Company

USA . 1,954 parts In-Stock

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$2.817

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$2.705

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1,954

$2.817

$2.705

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AZTECH Wire

Italy . 201 parts In-Stock

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$11.200

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$11.200

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Ampacity Inc.

Singapore . 23 parts In-Stock

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$531.060

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23

$531.060

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Semicontronic

India . 17 parts In-Stock

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$531.060

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$517.784

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$515.128

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17

$531.060

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$515.128

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Corphita

USA . 209 parts In-Stock

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$642.375

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Continental Prestige Electronics

USA . 2,770 parts In-Stock

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$787.220

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$771.476

2,770

$787.220

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$771.476

Argo Parts USA

USA . 598 parts In-Stock

1+ parts

$787.220

100+ parts

$779.348

1k+ parts

$771.476

10k+ parts

$763.603

598

$787.220

$779.348

$771.476

$763.603

Netroflash

USA . 500 parts In-Stock

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$787.220

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500

$787.220

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QUARKTWIN TECHNOLOGY LTD

USA . 18,104 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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5,880

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Overview

Elevate your RF & Microwave Amplifier game with the HMC1087F10 by Analog Devices. Designed with cutting-edge GAN technology, this wide-band high-power amplifier offers exceptional performance and reliability. With a maximum input power of 34 dBm and a gain of 11 dB, the HMC1087F10 is perfect for a variety of applications. From telecommunications to radar systems, this component is sure to meet your demanding requirements. Trust Analog Devices for quality products that deliver unmatched value and benefits to you and your customers.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity and high mechanical strength, making the amplifier durable and reliable for high-power applications.

Maximum Input Power (CW): 34 dBm

The high maximum input power capability allows the amplifier to handle high power levels without distortion, ensuring signal integrity and high performance.

Maximum Voltage Standing Wave Ratio: 6

A low VSWR value indicates efficient power transfer and minimal signal reflection, resulting in better overall signal quality and performance.

Technology: GAN

Gallium Nitride technology offers high electron mobility and power density, enabling high efficiency and power handling capabilities in a compact size.

Gain: 11 dB

With a high gain value, this amplifier can amplify weak signals effectively, improving overall signal strength and quality.

Minimum Operating Frequency: 2000 MHz

The wide frequency range allows the amplifier to be used in a variety of applications requiring amplification across different frequency bands.

Technical Specifications

RF & Microwave Amplifiers HMC1087F10 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

11 dB

Maximum Input Power (CW):

34 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Frequency:

20000 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

28

RF or Microwave Device Type:

Technology:

GAN

Maximum Voltage Standing Wave Ratio:

6

Trade Compliance

HMC1087F10 RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.2.C

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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