Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.
Median Price
$12.314
Lifecycle Status
Suppliers In-Stock
12
In-Stock Inventory
1k+
Arrow
1+ parts
100+ parts
$9.806
1k+ parts
10k+ parts
Mouser Electronics
$15.480
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Element14
$22.770
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$15.180
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Verical
Farnell
$7.760
Digiode
$11.698
Nova Conductors
$12.125
Vyrian
Anansix
Chip Stock
Flip Electronics
Cogito LLC
Modulus Dynamics
$1.618
Aztec Data Supply Inc.
$1.671
Corohmni
$2.974
Semicontronic
$6.600
$6.435
$6.402
Corphita
$11.083
Aranea Global
$11.882
$11.407
Ampacity Inc.
$14.360
Perfect Parts
Argo Parts USA
UNI Independent Distributors
iodParts Technologies Inc.
Continental Prestige Electronics
$9.960
The use of plastic/epoxy material for the package body ensures durability and reliability of the amplifier, making it suitable for various environmental conditions.
With a high maximum input power capacity of 38 dBm, this amplifier can handle high power signals effectively without distortion, ensuring consistent performance.
A maximum VSWR of 10 indicates good impedance matching, resulting in efficient power transfer and minimal signal reflection in the amplifier.
Operating at 28 volts, this amplifier provides sufficient power for high performance applications, making it a reliable choice for demanding RF and microwave systems.
Utilizing MOS technology allows for efficient power handling and low noise operation, enhancing the overall performance and reliability of the amplifier.
With a gain of 21.5 dB, this amplifier can boost the strength of input signals effectively, making it suitable for applications where signal amplification is needed.
Operating at a minimum frequency of 100 MHz, this amplifier covers a wide frequency range, making it versatile and suitable for various RF and microwave applications.
With a maximum operating frequency of 1000 MHz, this amplifier can handle high frequency signals, making it suitable for broadband applications requiring wide frequency coverage.
RF & Microwave Amplifiers MW7IC008NT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors
Characteristic Impedance:
Construction:
Gain:
Maximum Input Power (CW):
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No. of Functions:
No. of Terminals:
Maximum Operating Frequency:
Minimum Operating Frequency:
Package Body Material:
Package Equivalence Code:
Power Supplies (V):
RF or Microwave Device Type:
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Maximum Voltage Standing Wave Ratio:
MW7IC008NT1 RF & Microwave trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
OPA2277UA
Texas Instruments
OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
Synsemi
MMBF170LT1G
Onsemi
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
International Semiconductor
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
2N2222A
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
A64
M/a-com
RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Maximum Supply Current: 38 mA; Power Supplies (V): 15; Maximum Operating Temperature: 50 Cel;
TRF37C73IDSGT
TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.
MAAL-011141-000PPR
M/a-com Technology Solutions
MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
SST12CP11-QVCE
Microchip Technology
SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.
SMA70-2
WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;
NBB-400-T1
Rf Micro Devices
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 8000 MHz;
HMC960LP4ETR
Analog Devices
Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.
AMMC-6442-W50
Broadcom
AMMC-6442-W50 by Broadcom is a wide band medium power RF amplifier with 20 dB gain. It operates b/w 37-40 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring a 50 ohm characteristic impedance and powered by a 5V supply.
TGF2023-20
Triquint Semiconductor
WIDE BAND HIGH POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3/e4; Terminal Finish: MATTE TIN/GOLD; Minimum Operating Frequency: 0 MHz; Maximum Input Power (CW): 43 dBm;
MGA-82563-TR1G
Agilent Technologies
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);
TGA2701-SM
Qorvo
TGA2701-SM by Qorvo is a wide band high power RF amplifier with 18 dB gain. It operates from 5900 MHz to 8500 MHz, handling up to 29 dBm CW input power. Ideal for applications requiring high power amplification in RF and microwave systems.
MAX2659ELT/V+
Maxim Integrated
NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
QPA9121SR
Qorvo's QPA9121SR is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact surface mount package and low supply current of 130mA at 5V, it offers high performance in RF & microwave systems.
MSA-1105
Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.
CMD328K3
WIDE BAND LOW POWER;
HMC506LP4ETR
Hittite Microwave
NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
HMC499LC4TR
Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
ADL8111ACCZN
ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
XB1007-QT-0G00
Mimix Broadband
WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
NBB-300-T1
Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
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MW7IC2220NR1
Freescale Semiconductor
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.
MW7IC008NT1
WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Gain: 21.5 dB;
MW7IC2750NBR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
MW7IC930NR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Power Supplies (V): 28; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
MW7IC2040NR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; Power Supplies (V): 28; Maximum Operating Frequency: 1990 MHz;
MW7IC2725NBR1
NARROW BAND HIGH POWER; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 22 dBm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 10; Characteristic Impedance: 50 ohm;
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;
MW7IC2240GNR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz;
MW7IC2040NBR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Voltage Standing Wave Ratio: 5; JESD-609 Code: e3; No. of Functions: 1;
MW7IC2240N
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 5; Construction: COMPONENT; Maximum Operating Frequency: 2170 MHz; Minimum Operating Frequency: 2110 MHz;
MW7IC18100NBR1
NARROW BAND HIGH POWER; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 5; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 1805 MHz;
MW7IC2240NBR1
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 150 Cel; Minimum Operating Frequency: 2000 MHz; Gain: 28 dB;
MW7IC2240NR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Power Supplies (V): 28; Terminal Finish: TIN; Minimum Operating Frequency: 2000 MHz;
MW7IC2725GNR1
NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10;
MW7IC18100NR1
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 5; Gain: 27 dB;
MW7IC2020NT1
NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; No. of Functions: 1;
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