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MW7IC2040NBR1

NXP Semiconductors

MW7IC2040NBR1 by NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Voltage Standing Wave Ratio: 5; JESD-609 Code: e3; No. of Functions: 1;

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

MW7IC2040NBR1 by NXP Semiconductors
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Digiode

USA . 3,849 parts In-Stock

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Vyrian

USA . 2,469 parts In-Stock

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Anansix

USA . 2,006 parts In-Stock

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2,006

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Chip Stock

USA . 712 parts In-Stock

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Cyclops Electronics Ltd

UK . 30 parts In-Stock

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LWI Electronics Inc

India . 14 parts In-Stock

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Bristol Electronics

USA . 12 parts In-Stock

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Cogito LLC

Ukraine . 6 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 5 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,718 parts In-Stock

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$21.000

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A-Z Elektronik GmbH

Germany . 7,395 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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UNI Independent Distributors

Spain . 2,861 parts In-Stock

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Perfect Parts

USA . 2,589 parts In-Stock

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GreenTree Electronics

Israel . 812 parts In-Stock

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Corphita

USA . 306 parts In-Stock

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Technical Specifications

RF & Microwave Amplifiers MW7IC2040NBR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

29.5 dB

Maximum Input Power (CW):

25 dBm

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Frequency:

1990 MHz

Minimum Operating Frequency:

1805 MHz

Package Body Material:

Package Equivalence Code:

FLNG,.8''H SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

5

Trade Compliance

MW7IC2040NBR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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