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MW7IC2725NBR1

NXP Semiconductors

MW7IC2725NBR1 by NXP Semiconductors

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

Median Price

$59.455

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

MW7IC2725NBR1 by NXP Semiconductors
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Arrow

USA . 278 parts In-Stock

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$56.050

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Verical

USA . 278 parts In-Stock

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$62.860

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$62.860

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$62.860

Distributors (In-Stock)

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Digiode

USA . 2,687 parts In-Stock

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$53.248

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Nova Conductors

Japan . 50 parts In-Stock

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$94.280

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$94.280

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Vyrian

USA . 6,068 parts In-Stock

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Anansix

USA . 590 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 496 parts In-Stock

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$13.148

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One Stop Electronics

USA . 278 parts In-Stock

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$47.640

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Ampacity Inc.

Singapore . 278 parts In-Stock

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$47.640

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Corphita

USA . 3,281 parts In-Stock

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$50.445

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Continental Prestige Electronics

USA . 706 parts In-Stock

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$94.280

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$92.394

706

$94.280

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$92.394

Netroflash

USA . 500 parts In-Stock

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$94.280

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 3,742 parts In-Stock

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Lixinc

USA . 3,302 parts In-Stock

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UNI Independent Distributors

Spain . 2,343 parts In-Stock

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GreenTree Electronics

Israel . 60 parts In-Stock

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Overview

Elevate your RF & Microwave Amplification with the MW7IC2725NBR1 from NXP Semiconductors. Designed for narrow band high power applications, this component boasts a gain of 25.5 dB and a maximum input power of 22 dBm. With a characteristic impedance of 50 ohms and a matte tin finish, this amplifier ensures top-notch performance and reliability. Whether you're in the telecommunications, aerospace, or defense industries, this product offers unparalleled value and efficiency for all your amplification needs. Upgrade to NXP Semiconductors for superior quality and performance.

Feature Benefit Bullets

Maximum Input Power (CW): 22 dBm

The high maximum input power ensures that the amplifier can handle high power levels without distortion, making it suitable for demanding RF and microwave applications.

Maximum Voltage Standing Wave Ratio: 10

The low VSWR indicates good impedance matching and efficient power transfer, resulting in minimal signal reflection and high output power.

Construction: COMPONENT

Being a component-based construction, the amplifier can be easily integrated into existing RF and microwave systems for customized applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides a reliable and durable connection, ensuring long-term performance and stability in varied environmental conditions.

RF or Microwave Device Type: NARROW BAND HIGH POWER

This device type is specialized for narrow-band applications requiring high power output, making it ideal for specific frequency ranges with focused amplification.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches common RF components, ensuring compatibility and efficient signal transmission within standard RF systems.

Gain: 25.5 dB

With a high gain value, the amplifier boosts signal strength effectively, improving overall system performance and enhancing communication capabilities.

Minimum Operating Frequency: 2300 MHz

The ability to operate at low frequencies allows the amplifier to cover a wide range of RF applications with varying frequency requirements.

Maximum Operating Frequency: 2700 MHz

The high maximum operating frequency enables the amplifier to support a broad range of RF applications, making it versatile for diverse frequency bands.

Technical Specifications

RF & Microwave Amplifiers MW7IC2725NBR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

25.5 dB

Maximum Input Power (CW):

22 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2300 MHz

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MW7IC2725NBR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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