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MW7IC2220NR1

NXP Semiconductors

MW7IC2220NR1 by NXP Semiconductors

The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.

Median Price

$35.210

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

MW7IC2220NR1 by NXP Semiconductors
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1,805 parts In-Stock

1+ parts

$32.140

100+ parts

-

1k+ parts

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1,805

$32.140

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Rochester

USA . 1,520 parts In-Stock

1+ parts

-

100+ parts

$35.210

1k+ parts

$31.500

10k+ parts

$29.650

1,520

-

$35.210

$31.500

$29.650

DigiKey

USA . 1,135 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,135

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Farnell

UK . 1,135 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$47.830

10k+ parts

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1,135

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$47.830

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Flip Electronics (Authorized)

USA . 500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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500

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,681 parts In-Stock

1+ parts

$30.182

100+ parts

-

1k+ parts

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10k+ parts

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3,681

$30.182

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$37.650

100+ parts

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500

$37.650

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Anansix

USA . 2,408 parts In-Stock

1+ parts

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2,408

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Vyrian

USA . 845 parts In-Stock

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845

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Flip Electronics

USA . 500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 985 parts In-Stock

1+ parts

$27.320

100+ parts

-

1k+ parts

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10k+ parts

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985

$27.320

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One Stop Electronics

USA . 755 parts In-Stock

1+ parts

$27.320

100+ parts

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755

$27.320

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Corphita

USA . 2,593 parts In-Stock

1+ parts

$28.593

100+ parts

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2,593

$28.593

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Continental Prestige Electronics

USA . 4,043 parts In-Stock

1+ parts

$37.650

100+ parts

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1k+ parts

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10k+ parts

$36.897

4,043

$37.650

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$36.897

Netroflash

USA . 50 parts In-Stock

1+ parts

$37.650

100+ parts

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50

$37.650

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Component Stockers USA

USA . 4,215 parts In-Stock

1+ parts

$40.480

100+ parts

$38.050

1k+ parts

$34.400

10k+ parts

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4,215

$40.480

$38.050

$34.400

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A-Z Elektronik GmbH

Germany . 6,635 parts In-Stock

1+ parts

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6,635

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UNI Independent Distributors

Spain . 6,075 parts In-Stock

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6,075

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,602 parts In-Stock

1+ parts

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3,602

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GreenTree Electronics

Israel . 2,450 parts In-Stock

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2,450

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 7 parts In-Stock

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7

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Overview

Elevate your RF and microwave amplifier needs with the MW7IC2220NR1 by NXP Semiconductors. Known for their top-notch quality and reliability, NXP delivers cutting-edge technology in the RF & Microwave Amplifiers category. With a maximum input power of 20 dBm and a gain of 29dB, this narrow band high-power device is perfect for a wide range of applications. From communication systems to radar and aerospace, this component offers unmatched performance and efficiency. Trust NXP Semiconductors to provide you with the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, ideal for portable applications.

Maximum Input Power (CW): 20 dBm

Handles high input power levels without distortion, suitable for demanding RF applications.

Maximum Voltage Standing Wave Ratio: 5

Ensures efficient power transfer with minimal signal reflection, leading to improved performance.

Construction: COMPONENT

Modular design allows for easy customization and integration with existing systems.

Power Supplies (V): 28

Works with standard power sources, making it convenient for a wide range of applications.

Maximum Operating Temperature: 150 °C

Operates reliably in high temperature environments, suitable for harsh conditions.

Terminal Finish: Matte Tin (Sn)

Provides a secure and reliable connection, ensuring consistent performance.

Technology: MOS

Utilizes advanced MOS technology for high efficiency and low power consumption.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Specifically designed for narrow band high power applications, delivering exceptional performance.

Characteristic Impedance: 50 ohm

Matches standard RF systems for maximum power transfer and signal integrity.

Gain: 29 dB

Offers high gain for amplifying weak signals and improving overall signal strength.

Minimum Operating Frequency: 2000 MHz

Covers a wide frequency range, suitable for various RF and microwave applications.

Maximum Operating Frequency: 2200 MHz

Supports high frequency operations, making it versatile for different communication systems.

Technical Specifications

RF & Microwave Amplifiers MW7IC2220NR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

29 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Frequency:

2200 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

150 Cel

Package Body Material:

Package Equivalence Code:

FLNG,.67"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

5

Trade Compliance

MW7IC2220NR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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