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FDN5618P

Onsemi

FDN5618P by Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 57,620 parts In-Stock

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$0.113

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$0.113

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$0.113

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$0.113

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$0.113

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Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.159

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$0.151

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$0.151

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$0.159

$0.151

$0.151

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Mouser Electronics

USA . 37,193 parts In-Stock

1+ parts

$0.760

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$0.301

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$0.206

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37,193

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$0.206

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DigiKey

USA . 24,454 parts In-Stock

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$0.760

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$0.301

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$0.205

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$0.150

24,454

$0.760

$0.301

$0.205

$0.150

Distrelec

Netherlands . 2,080 parts In-Stock

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$0.916

100+ parts

$0.739

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$0.596

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2,080

$0.916

$0.739

$0.596

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Future Electronics

Canada . 8,940,000 parts In-Stock

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$0.210

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EBV Elektronik

Germany . 1,695,000 parts In-Stock

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Element14

Singapore . 235,724 parts In-Stock

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$0.385

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$0.264

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$0.259

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$0.259

Farnell

UK . 199,754 parts In-Stock

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$0.242

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$0.184

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Flip Electronics (Authorized)

USA . 176,000 parts In-Stock

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RS (Exports)

UK . 88,405 parts In-Stock

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Arrow

USA . 51,000 parts In-Stock

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Verical

USA . 51,000 parts In-Stock

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Master Electronics

USA . 42,442 parts In-Stock

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Chip1Stop

Japan . 2,800 parts In-Stock

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$0.270

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2,800

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Distributors (In-Stock)

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Digiode

USA . 2,946 parts In-Stock

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$0.151

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Nova Conductors

Japan . 750 parts In-Stock

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TME

Poland . 482 parts In-Stock

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$0.241

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$0.190

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$0.147

482

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$0.147

Maritex

Poland . 151,430 parts In-Stock

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$0.583

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$0.149

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$0.109

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151,430

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$0.149

$0.109

$0.091

IBS Electronics

USA . 14,421,000 parts In-Stock

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NAC Semi

USA . 7,863,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 229,822 parts In-Stock

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Chip Stock

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Pride Electronics

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Electro Sonic

Canada . 21,000 parts In-Stock

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Sensible Micro Corp

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Component Sense

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Bristol Electronics

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ComSIT Distribution GmbH

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Bas Electronics GmbH & Co. KG

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ACDS - Activité Composants Distribution Service

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LIBRA Elektronik GmbH

Germany . 2,973 parts In-Stock

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Dark Horse Electronics

USA . 2,836 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,580 parts In-Stock

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Flip Electronics

USA . 500 parts In-Stock

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Semi Source

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Halfin

Belgium . 9 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 112,940 parts In-Stock

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$0.094

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Corphita

USA . 2,620 parts In-Stock

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$0.143

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Argo Parts USA

USA . 934 parts In-Stock

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$0.179

934

$0.185

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Modulus Dynamics

Lithuania . 5,858 parts In-Stock

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$0.201

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$0.201

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$0.201

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Corohmni

South Africa . 651 parts In-Stock

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$0.201

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.197

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Benley Electronics

USA . 3,000 parts In-Stock

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$0.500

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Aztec Data Supply Inc.

USA . 1,518 parts In-Stock

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$1.797

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Continental Prestige Electronics

USA . 417,488 parts In-Stock

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$0.281

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GreenTree Electronics

Israel . 320,000 parts In-Stock

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Perfect Parts

USA . 293,735 parts In-Stock

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Eastek

USA . 182,000 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 106,820 parts In-Stock

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RC Electronics

USA . 77,261 parts In-Stock

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$0.230

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iodParts Technologies Inc.

India . 22,320 parts In-Stock

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Infinite Electronics LLP (Excess)

. 11,679 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Robosynatics

Brazil . 9,568 parts In-Stock

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$0.197

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$0.193

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$0.193

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Lucentia Tech

USA . 9,568 parts In-Stock

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$0.197

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$0.193

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$0.193

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$0.193

S.R.D Solutions

India . 7,000 parts In-Stock

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BidChips

USA . 6,000 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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iBuyXS LLC

. 6,000 parts In-Stock

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$0.145

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Lixinc

USA . 5,918 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,082 parts In-Stock

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Computer Components Inc. - USA

USA . 3,180 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,996 parts In-Stock

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Supply Digital

USA . 2,875 parts In-Stock

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TANS Electronics

Latvia . 2,444 parts In-Stock

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Glotronic Ltd.

UK . 2,397 parts In-Stock

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SupplyDigital Components

Austria . 2,140 parts In-Stock

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Problanco Electronics

Mexico . 2,054 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Spain . 1,400 parts In-Stock

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Germany . 1,110 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Kulean Microsystems

USA . 84 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality FDN5618P Power Field Effect Transistor by Onsemi. Designed for switching applications, this P-CHANNEL transistor offers a single configuration with a built-in diode, providing convenience and efficiency. With a maximum drain current of 1.25 A and a minimum DS breakdown voltage of 60 V, this transistor ensures reliable performance. Whether you're working on power management or motor control systems, the FDN5618P delivers exceptional value and benefits, making it a top choice for electronics enthusiasts and professionals alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and protection for the internal components of the FET.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low ON resistance and high current-carrying capability, making them ideal for high-power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage spikes, enhancing the reliability of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low ON-resistance for efficient power control.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto PCBs, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can safely handle higher voltages, providing added protection for the circuit.

Maximum Drain Current (ID): 1.25 A

The high maximum drain current rating allows for superior power-handling capabilities, making it suitable for a variety of high-current applications.

Maximum Power Dissipation (Abs): 0.5 W

The low power dissipation helps in reducing heat generation and improving efficiency, leading to better overall performance of the FET.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh environments.

Technical Specifications

Power Field Effect Transistors (FET) FDN5618P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.25 A

Maximum Drain Current (ID):

1.25 A

Maximum Drain-Source On Resistance:

.17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDN5618P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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