Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
Median Price
$2.360
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Suppliers In-Stock
15
In-Stock Inventory
1k+
Farnell
1+ parts
$2.190
100+ parts
$0.982
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$0.743
10k+ parts
$0.608
Newark
$2.530
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Mouser Electronics
$3.100
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$1.010
DigiKey
$1.386
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Element14
$4.210
$1.890
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$1.250
Arrow
$0.889
Verical
Future Electronics
$1.130
Nova Conductors
$1.260
IBS Electronics
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NAC Semi
$6.900
Vyrian
Chip Stock
Velocity Electronics
NexGen Digital
Semicontronic
$0.720
$0.702
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Ampacity Inc.
Aranea Global
$1.235
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Modulus Dynamics
$1.255
Corohmni
Continental Prestige Electronics
Argo Parts USA
Aztec Data Supply Inc.
$1.830
Advanced Electronics
$2.145
$1.952
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Microchip USA
$6.450
iBuyXS LLC
$25.000
Robosynatics
Lucentia Tech
$1.230
$1.205
Kepictronics
BidChips
Futuretech Components
iodParts Technologies Inc.
Authorized Procurement Solutions
Formix International (Excess)
Provides good insulation and protection for the components inside, ensuring durability.
N-channel FETs typically have lower on-state resistance and higher electron mobility, making them efficient for various applications.
Can handle high voltage levels, making it suitable for power applications.
Capable of handling high current spikes, ensuring reliability in demanding conditions.
Low on-resistance results in reduced power dissipation and higher efficiency in switching applications.
Can withstand high-temperature soldering processes, ensuring reliable assembly onto circuit boards.
Power Field Effect Transistors (FET) SI7252DP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SI7252DP-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev 07/Jun/2023
PCN Assembly/Origin - New solder paste 26/May/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
STM8S003F3P6TR
STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.
ECA2DHG4R7
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
2N2222A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
1N4148WS
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN6505BDBVR
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
LM555CMX
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
Nexperia
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Daco Semiconductor
IRLL2705TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Drain-Source On Resistance: .051 ohm; Peak Reflow Temperature (C): 260;
IRLML2502TRPBF
Infineon Technologies
IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
IRFP4468PBF
IRFP4468PBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 1120A and EAS of 740mJ, ideal for SWITCHING applications. With 0.0026 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
DMPH3010LK3-13
Diodes Incorporated
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
PSMN040-100MSEX
PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.
IRF7401TRPBF
Infineon's IRF7401TRPBF is an N-channel FET with a 20V breakdown voltage and 8.7A max drain current. Ideal for switching applications, it features a built-in diode, 0.022 ohm on-resistance, and can handle up to 35A pulsed drain current in enhancement mode operation.
FDT439N
FDT439N by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, capable of handling 20A IDM and 6.3A ID. With an operating temperature of up to 150°C, this MOSFET in PLASTIC/EPOXY package is suitable for various high-power electronic designs.
PMV20ENR
PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.
AUIRF5210STRL
AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
JANTX2N6796
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
FQP27P06
FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.
SQJ457EP-T1_GE3
Vishay Intertechnology
Vishay Intertechnology's SQJ457EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.025 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
FDD4243
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
IRLL024NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
IRF640SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
IRF9530
Samsung
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
2N7000
Topaz Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb);
BSC067N06LS3GATMA1
BSC067N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 47mJ EAS, and 0.0067 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
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SI7232DN-T1-GE3
Vishay Intertechnology's SI7232DN-T1-GE3 is an N-channel Power FET with 2 elements, built-in diode, and a max drain current of 25A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 20V. With a package style of small outline and matte tin terminal finish, it offers high performance in a compact design.
SI7288DP-T1-GE3
Vishay Intertechnology's SI7288DP-T1-GE3 is an N-channel FET with 2 separate elements and built-in diode, ideal for switching applications. Features include max pulsed drain current of 50A, avalanche energy rating of 5mJ, and max power dissipation of 15.6W. With a max operating temperature of 150°C, this MOSFET has a drain-source on resistance of 0.019 ohm and can handle a max drain current of 10A.
SI7216DN-T1-E3
Vishay Intertechnology's SI7216DN-T1-E3 is an N-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.032 ohm Drain-Source On Resistance. Ideal for power management in various electronic devices due to its high power dissipation of 20.8W and small outline package style.
SI7252ADP-T1-GE3
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
SI7216DN-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6.5 A;
SI7272DP-T1-GE3
Vishay Intertechnology's SI7272DP-T1-GE3 is an N-channel Power FET with 30V DS breakdown voltage and 60A IDM. Ideal for switching applications, it features a separate configuration with built-in diode, 0.0093 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount designs, this transistor has a max power dissipation of 22W and can handle up to 150°C operating temperature.
SI7228DN-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI7234DP-T1-GE3
Vishay Intertechnology's SI7234DP-T1-GE3 is an N-channel Power FET with 2 separate elements and built-in diode. It operates in enhancement mode for switching applications, offering a max pulsed drain current of 80A and a min DS breakdown voltage of 12V. Ideal for surface mount designs, it has a max power dissipation of 46W and can handle temperatures from -55 to 150°C.
SI7212DN-T1-E3
Vishay Intertechnology's SI7212DN-T1-E3 is an N-CHANNEL FET for switching applications. With 30V DS breakdown voltage, it features separate configuration with built-in diode. Operating in enhancement mode, it offers 4.9A max drain current and 0.036 ohm max on resistance, suitable for high-power applications.
SI7223DN-T1-GE3
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SI7220DN-T1-E3
Vishay Intertechnology's SI7220DN-T1-E3 is an N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring 2 elements with built-in diode, it has a max pulsed drain current of 20A and 0.06 ohm max drain-source on resistance. Suitable for surface mount, this MOSFET operates in enhancement mode at up to 150°C.
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