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DN3535N8-G

Microchip Technology

DN3535N8-G by Microchip Technology

DN3535N8-G by Microchip Technology is a N-CHANNEL FET with 0.5A IDM, 1.6W Abs Pd, and 10ohm RDS(on). Ideal for switching applications in small outline packages, operating from -55 to 150°C.

Median Price

$0.739

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 8,000 parts In-Stock

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$0.545

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$0.545

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Adafruit Industries

USA . 50 parts In-Stock

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$0.717

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$0.681

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$0.681

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$0.717

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$0.681

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DigiKey

USA . 5,436 parts In-Stock

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$0.900

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$0.750

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Mouser Electronics

USA . 5,400 parts In-Stock

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$0.900

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Master Electronics

USA . 25,500 parts In-Stock

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$0.739

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$0.666

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$0.666

Verical

USA . 25,500 parts In-Stock

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$0.869

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$0.786

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Element14

Singapore . 10,000 parts In-Stock

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Arrow

USA . 2,000 parts In-Stock

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$0.737

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Farnell

UK . 544 parts In-Stock

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$0.566

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Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$0.715

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$0.715

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TME

Poland . 1,623 parts In-Stock

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$0.830

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$0.770

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Bristol Electronics

USA . 476 parts In-Stock

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$1.875

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$0.694

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$0.600

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Electro Sonic

Canada . 49,500 parts In-Stock

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IBS Electronics

USA . 25,500 parts In-Stock

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$0.954

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$0.930

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$0.930

Vyrian

USA . 16,309 parts In-Stock

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Chip Stock

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Sensible Micro Corp

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Goldney Electronics S.L.

Spain . 22 parts In-Stock

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LWI Electronics Inc

India . 15 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 13,674 parts In-Stock

1+ parts

$0.463

100+ parts

$0.451

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$0.449

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13,674

$0.463

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Corohmni

South Africa . 209 parts In-Stock

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$0.622

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Aranea Global

USA . 1,000 parts In-Stock

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$0.701

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$0.673

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$0.701

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Argo Parts USA

USA . 3,562 parts In-Stock

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$0.712

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$0.691

3,562

$0.712

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$0.691

Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.717

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$0.681

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Ampacity Inc.

Singapore . 16,018 parts In-Stock

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$1.010

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Aztec Data Supply Inc.

USA . 2,694 parts In-Stock

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$1.590

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Modulus Dynamics

Lithuania . 13,749 parts In-Stock

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Microchip USA

USA . 6,723 parts In-Stock

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$4.485

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iodParts Technologies Inc.

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Kepictronics

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Lixinc

USA . 19,836 parts In-Stock

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LMD Electronica

Estonia . 8,357 parts In-Stock

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Ledger Components

France . 7,964 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 6,768 parts In-Stock

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Montano Global Distributors

Canada . 6,057 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,512 parts In-Stock

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LOOK Integrated Logistics

Peru . 3,532 parts In-Stock

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NIA Electronics

USA . 2,429 parts In-Stock

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Continental Prestige Electronics

USA . 1,192 parts In-Stock

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$0.590

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Overview

Enhance the performance of your electronic devices with the DN3535N8-G Power Field Effect Transistor by Microchip Technology. Designed with precision and reliability, this N-CHANNEL FET offers seamless switching capabilities for various applications. With a maximum power dissipation of 1.6 W and a maximum drain-source on resistance of 10 ohms, this transistor ensures optimal efficiency and durability. Trust in Microchip Technology's expertise in semiconductor technology to deliver top-notch quality and value. Upgrade your electronics with the DN3535N8-G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow, making it suitable for various electronic applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode offers added functionality and protection in circuits where back EMF could occur.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easy to install and suitable for compact circuit designs, making it ideal for modern electronic devices.

Operating Mode: DEPLETION MODE

Allows for efficient control of current flow with low leakage, improving overall circuit performance.

Maximum Pulsed Drain Current (IDM): 0.5 A

Capable of handling high peak currents, making it suitable for applications that require intermittent high-power operations.

Maximum Power Dissipation (Abs): 1.6 W

Can dissipate heat effectively, ensuring stable performance even under high power conditions.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of temperature environments, increasing its versatility.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, ensuring consistent operation in demanding applications.

Technical Specifications

Power Field Effect Transistors (FET) DN3535N8-G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Microchip Technology

Specs

Case Connection:

DRAIN

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.5 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

50 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

DN3535N8-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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