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NDS7002A_NB9GGTXA

Fairchild Semiconductor

NDS7002A_NB9GGTXA by Fairchild Semiconductor

Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.

Median Price

$1.137

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Adafruit Industries

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$1.080

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Digiode

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Aztec Data Supply Inc.

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Advanced Electronics

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Modulus Dynamics

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Overview

Elevate your power management solutions with the NDS7002A_NB9GGTXA by Fairchild Semiconductor. Crafted with precision and expertise, this N-CHANNEL Power Field Effect Transistor offers unparalleled performance in switching applications. Its compact design and high reliability make it ideal for a wide range of electronic devices. Experience seamless operation and enhanced efficiency with this innovative product. Trust Fairchild Semiconductor to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient electron flow and low on-resistance for better performance.

Configuration: SINGLE

Simplified design and operation without the need for complex circuitry.

Transistor Application: SWITCHING

Suitable for applications that require fast switching speeds and high efficiency.

Surface Mount: YES

Easy integration onto printed circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 60 V

Can withstand high voltage levels, making it suitable for a variety of power applications.

Maximum Drain-Source On Resistance: 2 ohm

Low on-resistance leads to reduced power losses and heat generation, increasing overall efficiency.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) NDS7002A_NB9GGTXA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.28 A

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1.5 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS7002A_NB9GGTXA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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