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FDS3672_NL

Fairchild Semiconductor

FDS3672_NL by Fairchild Semiconductor

FDS3672_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 7.5A Drain Current, 0.023 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in RECTANGULAR shape.

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Overview

Discover the unparalleled quality and reliability of the FDS3672_NL by Fairchild Semiconductor, a leading manufacturer in the industry. This N-CHANNEL Power Field Effect Transistor with a built-in diode is perfect for switching applications, offering a maximum drain current of 7.5 A and a low on-resistance of just 0.023 ohm. Its small outline package and matte tin terminal finish make it ideal for a variety of electronic devices. Trust Fairchild Semiconductor to deliver cutting-edge technology and superior performance for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps protect the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are generally more efficient and have better performance characteristics compared to P-Channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds protection against reverse voltage spikes, making the transistor more reliable in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in tasks that require rapid on/off switching.

Surface Mount: YES

Suitable for automated assembly processes and takes up less space on a circuit board, making it ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers good switching speed and low power consumption, making the FET efficient and reliable.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand heat and operate reliably in a variety of environments.

Technical Specifications

Power Field Effect Transistors (FET) FDS3672_NL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

416 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

7.5 A

Maximum Drain Current (ID):

7.5 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS3672_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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