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FDS3890_NL

Fairchild Semiconductor

FDS3890_NL by Fairchild Semiconductor

FDS3890_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It features 2 elements with built-in diode for SWITCHING applications, offering 20A IDM and 0.044 ohm RDS(on). This small outline transistor in plastic/epoxy package is ideal for high-current switching circuits.

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Overview

Elevate your power management solutions with the FDS3890_NL by Fairchild Semiconductor. Designed with precision and reliability in mind, this N-channel Power FET offers unparalleled performance for switching applications. The separate configuration with built-in diode provides added convenience, while the 80 V minimum DS breakdown voltage ensures optimal safety. With a maximum pulsed drain current of 20 A and a low on-resistance of 0.044 ohm, this transistor delivers exceptional power handling capabilities. Trust Fairchild Semiconductor to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher switching speeds compared to P-channel FETs, making them ideal for efficient switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast response times and efficient power handling capabilities.

Minimum DS Breakdown Voltage: 80 V

With a high breakdown voltage, this FET can withstand high voltage levels, making it suitable for applications that require robust and reliable performance.

Avalanche Energy Rating (EAS): 175 mJ

The high avalanche energy rating ensures that the FET can handle energy spikes without damage, making it suitable for high-power and rugged applications.

Maximum Drain Current (ID): 4.7 A

With a high maximum drain current rating, this FET can handle significant current loads, making it suitable for high-power applications.

Technical Specifications

Power Field Effect Transistors (FET) FDS3890_NL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

175 mJ

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (ID):

4.7 A

Maximum Drain-Source On Resistance:

.044 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS3890_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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