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NX3008NBKW,115

NXP Semiconductors

NX3008NBKW,115 by NXP Semiconductors

NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

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Chip1Stop

Japan . 9,000 parts In-Stock

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Arrow

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Verical

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EBV Elektronik

Germany . 102,000 parts In-Stock

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Element14

Singapore . 78,407 parts In-Stock

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Farnell

UK . 69,002 parts In-Stock

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DigiKey

USA . 42,540 parts In-Stock

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Avnet

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Future Electronics

Canada . 21,000 parts In-Stock

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RS (Exports)

UK . 6,498 parts In-Stock

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TTI

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Rochester

USA . 706 parts In-Stock

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Digiode

USA . 994 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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$0.086

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TME

Poland . 245 parts In-Stock

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245

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IBS Electronics

USA . 657,000 parts In-Stock

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Chip Stock

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NAC Semi

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Semtec, LLC

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Micros

Poland . 3,000 parts In-Stock

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Partservice

France . 3,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,896 parts In-Stock

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Vyrian

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Anansix

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EPE Components Inc.

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ComSIT Distribution GmbH

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Elcom Components

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Ampacity Inc.

Singapore . 156,069 parts In-Stock

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Corphita

USA . 1,141 parts In-Stock

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Semicontronic

India . 292,456 parts In-Stock

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Argo Parts USA

USA . 4,151 parts In-Stock

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AZTECH Wire

Italy . 7,017 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 17,122 parts In-Stock

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Component Stockers USA

USA . 1,298,628 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Modulus Dynamics

Lithuania . 10,923 parts In-Stock

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Aztec Data Supply Inc.

USA . 492 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Eastek

USA . 162,000 parts In-Stock

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Glotronic Ltd.

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Lixinc

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Formix International (Excess)

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Perfect Parts

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UNI Independent Distributors

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Allen Electronics Distributors

USA . 7,798 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,569 parts In-Stock

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A-Z Elektronik GmbH

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Lucentia Tech

USA . 5,508 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,896 parts In-Stock

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Supply Digital

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Robosynatics

Brazil . 500 parts In-Stock

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Kepictronics

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Overview

Looking for high-quality Power FETs for your next project? Look no further than the NX3008NBKW,115 by NXP Semiconductors. With a reputation for excellence in semiconductor manufacturing, NXP delivers top-notch products that offer outstanding performance and reliability. Ideal for a variety of applications, this N-CHANNEL single configuration FET is sure to meet your power management needs. Experience the value, benefits, and advantages that NXP Semiconductors brings to customers with the NX3008NBKW,115. Elevate your projects with NXP today!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have better performance and lower on-state resistance compared to P-CHANNEL FETs, making them a good choice for various power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control of the switching behavior, providing better efficiency and performance in power applications.

Maximum Drain Current (Abs): 0.35 A

With a maximum drain current of 0.35 A, this FET can handle moderate power loads reliably.

Maximum Power Dissipation (Abs): 0.31 W

The FET's low power dissipation ensures minimal heat generation, making it suitable for applications where efficiency is crucial.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low on-state resistance, making this FET suitable for power switching applications.

Maximum Operating Temperature: 150 °C

The FET can operate at a maximum temperature of 150°C, allowing it to be used in high-temperature environments without compromising performance.

Terminal Finish: TIN

The TIN terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection in various operating conditions.

Technical Specifications

Power Field Effect Transistors (FET) NX3008NBKW,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.35 A

Maximum Drain Current (ID):

.35 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NX3008NBKW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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