Loading...

BSC030P03NS3GXT

Infineon Technologies

BSC030P03NS3GXT by Infineon Technologies

BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.

Median Price

$0.650

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.650

10,000

-

-

-

$0.650

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,872

-

-

-

-

VNN

France . 3,171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,171

-

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Digiode

USA . 430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

430

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,881 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

-

10k+ parts

-

9,881

$0.550

-

-

-

Semicontronic

India . 9,859 parts In-Stock

1+ parts

$0.550

100+ parts

$0.536

1k+ parts

$0.534

10k+ parts

-

9,859

$0.550

$0.536

$0.534

-

Aztec Data Supply Inc.

USA . 31,770 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

-

31,770

$0.570

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.785

100+ parts

$0.746

1k+ parts

$0.746

10k+ parts

-

40

$0.785

$0.746

$0.746

-

Corohmni

South Africa . 62 parts In-Stock

1+ parts

$1.119

100+ parts

-

1k+ parts

-

10k+ parts

-

62

$1.119

-

-

-

Modulus Dynamics

Lithuania . 19,485 parts In-Stock

1+ parts

$1.965

100+ parts

$1.886

1k+ parts

$1.808

10k+ parts

-

19,485

$1.965

$1.886

$1.808

-

Argo Parts USA

USA . 4,190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,190

-

-

-

-

Continental Prestige Electronics

USA . 1,323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

-

-

-

-

Corphita

USA . 825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

825

-

-

-

-

Robosynatics

Brazil . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$96.469

1k+ parts

$96.469

10k+ parts

$96.469

150

-

$96.469

$96.469

$96.469

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Unleash the power of innovation with the BSC030P03NS3GXT by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch quality with this P-Channel Power Field Effect Transistor. Perfect for switching applications, this single configuration transistor with built-in diode offers exceptional performance and reliability. With a maximum pulsed drain current of 200 A and an avalanche energy rating of 345 mJ, this transistor ensures efficient operation while maximizing power dissipation at 125W. Trust in Infineon to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-state resistance and high switching speeds, making them ideal for efficient power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps prevent reverse current flow and provides additional protection for the circuit, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast response times and efficient power handling capabilities.

Surface Mount: YES

Being surface-mountable makes the installation and integration of this FET easier and more convenient in modern circuit designs.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage allows this FET to handle higher voltages, making it suitable for a variety of power management tasks.

Maximum Power Dissipation (Abs): 125 W

With a high power dissipation rating, this FET can handle significant amounts of power without overheating, ensuring stable performance under heavy loads.

Maximum Drain Current (ID): 25.4 A

The high drain current rating enables this FET to deliver large amounts of current, making it capable of handling high-power applications.

Technical Specifications

Power Field Effect Transistors (FET) BSC030P03NS3GXT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

345 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

25.4 A

Maximum Drain-Source On Resistance:

.0046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

520 pF

JESD-30 Code:

R-PDSO-N8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

200 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

197 ns

Maximum Turn On Time (ton):

199 ns

Trade Compliance

BSC030P03NS3GXT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19