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BSC093N15NS5ATMA1

Infineon Technologies

BSC093N15NS5ATMA1 by Infineon Technologies

Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.

Median Price

$2.610

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 10,861 parts In-Stock

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$1.380

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$1.380

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$1.380

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Chip1Stop

Japan . 18,474 parts In-Stock

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$3.650

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$2.330

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$3.650

$2.330

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Verical

USA . 18,474 parts In-Stock

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$3.920

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$1.588

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$1.588

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Mouser Electronics

USA . 90 parts In-Stock

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$5.110

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$2.070

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$1.610

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90

$5.110

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$1.610

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DigiKey

USA . 26,047 parts In-Stock

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$5.710

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$2.672

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$2.053

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$1.995

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$2.672

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$1.995

Avnet

USA . 70,000 parts In-Stock

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Element14

Singapore . 28,178 parts In-Stock

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$2.610

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$2.230

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$2.160

28,178

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$2.230

$2.160

RS (Exports)

UK . 9,530 parts In-Stock

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$3.250

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$2.826

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Farnell

UK . 8,464 parts In-Stock

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$1.890

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$1.180

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Arrow

USA . 5,000 parts In-Stock

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Rochester

USA . 303 parts In-Stock

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$1.410

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Distributors (In-Stock)

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Digiode

USA . 101 parts In-Stock

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$1.387

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Nova Conductors

Japan . 700 parts In-Stock

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$2.495

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$2.495

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Maritex

Poland . 36,000 parts In-Stock

1+ parts

$2.732

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$1.565

1k+ parts

$1.409

10k+ parts

$1.261

36,000

$2.732

$1.565

$1.409

$1.261

Rutronik

Germany . 60,000 parts In-Stock

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$1.500

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Chip Stock

USA . 40,680 parts In-Stock

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IBS Electronics

USA . 20,000 parts In-Stock

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Component Sense

UK . 14,568 parts In-Stock

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Vyrian

USA . 9,609 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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TME

Poland . 5,000 parts In-Stock

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VNN

France . 627 parts In-Stock

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Inventory MP

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Bristol Electronics

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 10,582 parts In-Stock

1+ parts

$0.903

100+ parts

$0.867

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$0.831

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10,582

$0.903

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Ampacity Inc.

Singapore . 8,973 parts In-Stock

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$1.010

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Semicontronic

India . 9,888 parts In-Stock

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$1.270

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$1.238

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$1.232

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Corphita

USA . 764 parts In-Stock

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$1.314

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Aztec Data Supply Inc.

USA . 998 parts In-Stock

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$1.510

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Corohmni

South Africa . 453 parts In-Stock

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$1.618

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.913

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$1.817

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$1.817

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Argo Parts USA

USA . 750 parts In-Stock

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$2.401

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Bastille Electronics

Australia . 300 parts In-Stock

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$2.495

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$2.370

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$2.252

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$2.221

300

$2.495

$2.370

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$2.221

Continental Prestige Electronics

USA . 34,518 parts In-Stock

1+ parts

$3.970

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$2.610

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$1.720

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34,518

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$1.720

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RC Electronics

USA . 49,862 parts In-Stock

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$2.870

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$2.620

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$2.540

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Infinite Electronics LLP (Excess)

. 32,270 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

Israel . 14,819 parts In-Stock

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Microchip USA

USA . 6,353 parts In-Stock

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Formix International (Excess)

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Robosynatics

Brazil . 1,506 parts In-Stock

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$0.412

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$0.412

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Lucentia Tech

USA . 1,506 parts In-Stock

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$0.420

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$0.412

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$0.412

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$0.412

Speed Components Ltd (Excess)

Israel . 7 parts In-Stock

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Perfect Parts

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Overview

Elevate your power management with the BSC093N15NS5ATMA1 by Infineon Technologies, a high-quality N-CHANNEL Power Field Effect Transistor designed for switching applications. With a maximum drain current of 87A and a low on-resistance of 0.0093 ohm, this transistor offers unparalleled efficiency and performance. Its compact design and robust construction make it ideal for a wide range of industrial and automotive applications. Trust in Infineon Technologies' expertise and innovation to deliver cutting-edge solutions that meet your needs and exceed your expectations. Upgrade to the BSC093N15NS5ATMA1 today and experience the difference in power management technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good insulation, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and higher efficiency compared to P-channel FETs, making this transistor a good choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the circuit from voltage spikes, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

The surface mount capability of this transistor makes it easy to integrate into compact circuit designs.

Minimum DS Breakdown Voltage: 150 V

With a high breakdown voltage, this transistor can handle high voltages without damage, ensuring reliable operation.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form: FLAT

The flat terminal form provides a stable connection, improving the overall performance of the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the flow of current, making this transistor ideal for precision applications.

Maximum Pulsed Drain Current (IDM): 348 A

The high pulsed drain current rating allows the transistor to handle sudden spikes in current, enhancing its robustness.

Avalanche Energy Rating (EAS): 130 mJ

The high avalanche energy rating ensures that the transistor can withstand energy spikes, increasing its reliability.

No. of Terminals: 8

The multiple terminals provide flexibility in circuit connections, enabling versatility in design options.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and fast switching speeds, making this transistor suitable for demanding applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, ensuring the high performance of this transistor.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, increasing the longevity of the transistor.

Maximum Drain Current (ID): 87 A

With a high maximum drain current rating, this transistor can handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.0093 ohm

The low on-resistance results in minimal power loss and heat generation, improving the efficiency of the transistor.

Terminal Position: DUAL

The dual terminal position allows for easy connections in a variety of circuit configurations, enhancing the versatility of the transistor.

Case Connection: DRAIN

The drain case connection simplifies the circuit layout and improves thermal management, enhancing the overall performance of the transistor.

Technical Specifications

Power Field Effect Transistors (FET) BSC093N15NS5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

130 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

87 A

Maximum Drain-Source On Resistance:

.0093 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

348 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC093N15NS5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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