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BSC035N10NS5ATMA1

Infineon Technologies

BSC035N10NS5ATMA1 by Infineon Technologies

Infineon BSC035N10NS5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0035 ohm RDS(on), and 400A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with DUAL terminals.

Median Price

$1.576

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 15,031 parts In-Stock

1+ parts

$1.390

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$1.110

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$1.390

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Mouser Electronics

USA . 13,565 parts In-Stock

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$3.590

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$1.760

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$1.380

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$1.290

13,565

$3.590

$1.760

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$1.290

DigiKey

USA . 17,999 parts In-Stock

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$3.760

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$1.705

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$1.337

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$1.092

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$3.760

$1.705

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$1.092

Newark

USA . 3,524 parts In-Stock

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$4.080

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$2.250

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Future Electronics

Canada . 30,000 parts In-Stock

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Verical

USA . 13,001 parts In-Stock

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Arrow

USA . 5,000 parts In-Stock

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EBV Elektronik

Germany . 5,000 parts In-Stock

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Farnell

UK . 4,509 parts In-Stock

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Element14

Singapore . 4,509 parts In-Stock

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$1.960

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Rochester

USA . 2,200 parts In-Stock

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RS (Exports)

UK . 50 parts In-Stock

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Digiode

USA . 197 parts In-Stock

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$1.596

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Nova Conductors

Japan . 10 parts In-Stock

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$2.166

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$2.166

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TME

Poland . 3,700 parts In-Stock

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A&K Electronics

USA . 180,000 parts In-Stock

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Rotakorn

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IBS Electronics

USA . 45,000 parts In-Stock

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Rutronik

Germany . 40,000 parts In-Stock

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Chip Stock

USA . 23,500 parts In-Stock

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Bristol Electronics

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Flex Direct, LLC

USA . 13,906 parts In-Stock

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Vyrian

USA . 11,944 parts In-Stock

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Netsource Technology, Inc.

USA . 5,043 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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Connector Distribution Corp

USA . 1,291 parts In-Stock

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Right Parts Inc.

USA . 1,291 parts In-Stock

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VNN

France . 760 parts In-Stock

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ComSIT Distribution GmbH

Germany . 209 parts In-Stock

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South Electronics

USA . 21 parts In-Stock

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LWI Electronics Inc

India . 5 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 42,993 parts In-Stock

1+ parts

$0.347

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$0.347

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.788

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$0.749

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$0.749

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100

$0.788

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Corohmni

South Africa . 643 parts In-Stock

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$0.830

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Modulus Dynamics

Lithuania . 17,619 parts In-Stock

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$0.872

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$0.837

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$0.802

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17,619

$0.872

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$0.802

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Decca Corp

Germany . 9,863 parts In-Stock

1+ parts

$0.910

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$0.892

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$0.883

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9,863

$0.910

$0.892

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Ampacity Inc.

Singapore . 11,386 parts In-Stock

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$0.920

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Semicontronic

India . 10,008 parts In-Stock

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$0.920

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$0.897

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$0.892

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Corphita

USA . 744 parts In-Stock

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$1.512

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744

$1.512

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Argo Parts USA

USA . 2,779 parts In-Stock

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$2.166

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Netroflash

USA . 1,000 parts In-Stock

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$2.166

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$2.123

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$2.166

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Microchip USA

USA . 2,452 parts In-Stock

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$11.287

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GreenTree Electronics

Israel . 1,390,260 parts In-Stock

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RC Electronics

USA . 38,085 parts In-Stock

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$2.360

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$2.160

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$2.090

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$2.090

Continental Prestige Electronics

USA . 11,282 parts In-Stock

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$2.050

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$1.410

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Futuretech Components

Singapore . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 100 parts In-Stock

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Overview

Elevate your power management systems with the BSC035N10NS5ATMA1 by Infineon Technologies. Crafted with precision and innovation, this N-channel Power FET offers unparalleled performance in switching applications. Its single configuration with built-in diode ensures seamless operation, while the high-quality materials guarantee reliability and longevity. With a maximum drain current of 100A and a low on-resistance of 0.0035 ohm, this transistor provides exceptional value and efficiency for your projects. Trust in Infineon's expertise and revolutionize your power solutions today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and reliability are important.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON resistance and higher current carrying capabilities, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces the need for additional components, making this FET a cost-effective and space-saving choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low ON resistance for efficient performance.

Surface Mount: YES

The surface mount capability allows for easy and compact integration onto PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle high voltage applications with ease, ensuring reliability and safety.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, making it easy to mount and suitable for applications with limited space.

Terminal Form: FLAT

The flat terminal form provides a stable connection and ease of soldering, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

As an enhancement mode FET, this product offers low static power consumption and can be easily controlled with a positive voltage, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 400 A

With a high pulsed drain current rating, this FET can handle high peak currents, making it suitable for applications with high transient loads.

Technical Specifications

Power Field Effect Transistors (FET) BSC035N10NS5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

300 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.0035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

400 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC035N10NS5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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