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BSC011N03LSIATMA1

Infineon Technologies

BSC011N03LSIATMA1 by Infineon Technologies

Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.

Median Price

$1.030

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,343 parts In-Stock

1+ parts

$0.590

100+ parts

$0.527

1k+ parts

$0.496

10k+ parts

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1,343

$0.590

$0.527

$0.496

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Chip1Stop

Japan . 9,800 parts In-Stock

1+ parts

$0.764

100+ parts

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9,800

$0.764

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Newark

USA . 12,667 parts In-Stock

1+ parts

$2.120

100+ parts

$0.878

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12,667

$2.120

$0.878

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DigiKey

USA . 34,450 parts In-Stock

1+ parts

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$0.641

34,450

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$0.641

Farnell

UK . 14,887 parts In-Stock

1+ parts

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100+ parts

$1.030

1k+ parts

$0.494

10k+ parts

$0.493

14,887

-

$1.030

$0.494

$0.493

Element14

Singapore . 14,887 parts In-Stock

1+ parts

-

100+ parts

$1.250

1k+ parts

$0.952

10k+ parts

$0.789

14,887

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$1.250

$0.952

$0.789

RS (Exports)

UK . 14,120 parts In-Stock

1+ parts

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$5.293

14,120

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$5.293

Verical

USA . 9,782 parts In-Stock

1+ parts

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100+ parts

$0.981

1k+ parts

$0.812

10k+ parts

$0.627

9,782

-

$0.981

$0.812

$0.627

Future Electronics

Canada . 5,000 parts In-Stock

1+ parts

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100+ parts

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$1.040

5,000

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$1.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 321 parts In-Stock

1+ parts

$0.978

100+ parts

-

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321

$0.978

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.130

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10

$1.130

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Chip Stock

USA . 35,181 parts In-Stock

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Vyrian

USA . 11,643 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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$1.599

10,000

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$1.599

Flip Electronics

USA . 5,000 parts In-Stock

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Component Sense

UK . 2,767 parts In-Stock

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VNN

France . 907 parts In-Stock

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907

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Bristol Electronics

USA . 124 parts In-Stock

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124

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Inventory MP

USA . 64 parts In-Stock

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64

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PC Components Company LLC

USA . 60 parts In-Stock

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60

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Prism Electronics

USA . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,584 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

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10k+ parts

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11,584

$0.408

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Corohmni

South Africa . 240 parts In-Stock

1+ parts

$0.570

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240

$0.570

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Modulus Dynamics

Lithuania . 22,253 parts In-Stock

1+ parts

$0.868

100+ parts

$0.833

1k+ parts

$0.799

10k+ parts

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22,253

$0.868

$0.833

$0.799

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Semicontronic

India . 11,668 parts In-Stock

1+ parts

$0.890

100+ parts

$0.868

1k+ parts

$0.863

10k+ parts

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11,668

$0.890

$0.868

$0.863

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Decca Corp

Germany . 11,493 parts In-Stock

1+ parts

$0.890

100+ parts

$0.872

1k+ parts

$0.863

10k+ parts

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11,493

$0.890

$0.872

$0.863

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Corphita

USA . 618 parts In-Stock

1+ parts

$0.927

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618

$0.927

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Aztec Data Supply Inc.

USA . 149 parts In-Stock

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$0.944

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149

$0.944

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Argo Parts USA

USA . 503 parts In-Stock

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$0.997

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503

$0.997

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.130

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100

$1.130

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.504

100+ parts

$1.429

1k+ parts

$1.429

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50

$1.504

$1.429

$1.429

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Infinite Electronics LLP (Excess)

. 125,004 parts In-Stock

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125,004

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GreenTree Electronics

Israel . 125,000 parts In-Stock

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Perfect Parts

USA . 28,000 parts In-Stock

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Continental Prestige Electronics

USA . 17,782 parts In-Stock

1+ parts

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100+ parts

$1.100

1k+ parts

$0.696

10k+ parts

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17,782

-

$1.100

$0.696

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Robosynatics

Brazil . 14,772 parts In-Stock

1+ parts

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100+ parts

$1.584

1k+ parts

$1.551

10k+ parts

$1.551

14,772

-

$1.584

$1.551

$1.551

Lucentia Tech

USA . 14,772 parts In-Stock

1+ parts

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$1.584

1k+ parts

$1.551

10k+ parts

$1.551

14,772

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$1.584

$1.551

$1.551

Allen Electronics Distributors

USA . 14,750 parts In-Stock

1+ parts

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$0.645

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14,750

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$0.645

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RC Electronics

USA . 11,473 parts In-Stock

1+ parts

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$1.590

1k+ parts

$1.500

10k+ parts

$1.470

11,473

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$1.590

$1.500

$1.470

Futuretech Components

Singapore . 7,800 parts In-Stock

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7,800

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Microchip USA

USA . 5,406 parts In-Stock

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5,406

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Discover the power of the BSC011N03LSIATMA1 by Infineon Technologies, a top-quality N-channel power Field Effect Transistor (FET) designed for switching applications. With its single configuration and built-in diode, this transistor offers enhanced performance and reliability. Ideal for a wide range of electronic devices, this surface-mount transistor provides a high pulsing current rating of 400A and a low drain-source resistance. Trust in the expertise of Infineon Technologies to deliver cutting-edge technology and superior products that meet your needs. Upgrade your applications with the BSC011N03LSIATMA1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material offers durability and protection for the internal components of the FET, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used in various electronic applications due to their high efficiency and reliability in switching operations.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without the risk of damage, making it suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds, low power consumption, and high efficiency, making it ideal for power management in electronic circuits.

Maximum Pulsed Drain Current (IDM): 400 A

A high maximum pulsed drain current rating of 400A allows this FET to handle sudden surge currents without getting damaged, making it a reliable choice for demanding applications.

Avalanche Energy Rating (EAS): 100 mJ

The avalanche energy rating of 100mJ indicates the FET's ability to withstand power surges and transients, ensuring reliable performance in harsh environments.

Maximum Drain Current (ID): 37 A

With a maximum drain current of 37A, this FET can handle high power levels while maintaining efficient operation, making it suitable for a wide range of power management applications.

Maximum Drain-Source On Resistance: 0.0015 ohm

The low drain-source on resistance of 0.0015 ohms reduces power loss and heat generation in the FET, ensuring high efficiency and performance in power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) BSC011N03LSIATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

37 A

Maximum Drain-Source On Resistance:

.0015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

400 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC011N03LSIATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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