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BSC060N10NS3G

Infineon Technologies

BSC060N10NS3G by Infineon Technologies

BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.

Median Price

$2.570

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,337 parts In-Stock

1+ parts

$2.910

100+ parts

$1.270

1k+ parts

$0.953

10k+ parts

$0.860

4,337

$2.910

$1.270

$0.953

$0.860

Verical

USA . 4,143 parts In-Stock

1+ parts

-

100+ parts

$2.231

1k+ parts

$2.053

10k+ parts

$2.008

4,143

-

$2.231

$2.053

$2.008

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 2,223 parts In-Stock

1+ parts

$1.705

100+ parts

$1.029

1k+ parts

$0.870

10k+ parts

-

2,223

$1.705

$1.029

$0.870

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Forefront Electronics and Design

USA . 14 parts In-Stock

1+ parts

$4.900

100+ parts

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14

$4.900

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Cyclops Electronics Ltd

UK . 60,000 parts In-Stock

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Vyrian

USA . 16,789 parts In-Stock

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Rutronik

Germany . 5,000 parts In-Stock

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$1.450

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$1.450

ACDS - Activité Composants Distribution Service

France . 5,000 parts In-Stock

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VNN

France . 883 parts In-Stock

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Sensible Micro Corp

USA . 736 parts In-Stock

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736

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ComSIT Distribution GmbH

Germany . 693 parts In-Stock

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ComSIT USA

USA . 693 parts In-Stock

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Digiode

USA . 629 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Prism Electronics

USA . 7 parts In-Stock

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7

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Component Sense

UK . 4 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,716 parts In-Stock

1+ parts

$0.880

100+ parts

$0.858

1k+ parts

$0.854

10k+ parts

-

16,716

$0.880

$0.858

$0.854

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Ampacity Inc.

Singapore . 16,592 parts In-Stock

1+ parts

$0.880

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16,592

$0.880

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Modulus Dynamics

Lithuania . 17,515 parts In-Stock

1+ parts

$0.882

100+ parts

$0.847

1k+ parts

$0.811

10k+ parts

-

17,515

$0.882

$0.847

$0.811

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.334

100+ parts

$1.267

1k+ parts

$1.267

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200

$1.334

$1.267

$1.267

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Corohmni

South Africa . 322 parts In-Stock

1+ parts

$1.738

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322

$1.738

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CoreStaff

Japan . 4,143 parts In-Stock

1+ parts

$3.771

100+ parts

$1.454

1k+ parts

$1.414

10k+ parts

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4,143

$3.771

$1.454

$1.414

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Infinite Electronics LLP (Excess)

. 159,206 parts In-Stock

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Metaverse IC Inc.

Canada . 33,537 parts In-Stock

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Lixinc

USA . 16,614 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,015 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,010 parts In-Stock

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Technoshack Inc. (Excess)

Canada . 4,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,901 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,105 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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$10.278

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$10.278

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$10.278

500

-

$10.278

$10.278

$10.278

Bastille Electronics

Australia . 450 parts In-Stock

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450

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Corphita

USA . 88 parts In-Stock

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88

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Overview

Infineon Technologies Industrial Robotics Motor Control Solutions feature products that provide semiconductor solutions to boost industrial motor control applications. These solutions include low-voltage power MOSFETs, EiceDRIVER™ gate drivers, and XMC4800 microcontrollers. The OptiMOS™ 5 80V and 100V MOSFETs offer low on-state resistance. High power density and efficiency in motor control applications can be achieved with the combination of the Infineon EiceDRIVER 2EDL and 6EDL products. Use the XMC4800 microcontroller as the heart of motor control for superior motor control and real-time communication via EtherCAT®.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it a suitable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher efficiency and performance compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this FET a convenient choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast response times and low power consumption.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle high voltage applications with ease.

Package Shape: RECTANGULAR

The rectangular shape of the package saves space and allows for efficient placement on the PCB.

Terminal Form: NO LEAD

The no-lead terminal form simplifies soldering and ensures a reliable connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control and regulation, making them ideal for precise applications.

Maximum Pulsed Drain Current (IDM): 360 A

The high pulsed drain current rating allows for reliable operation in high current spikes.

Avalanche Energy Rating (EAS): 230 mJ

This FET can withstand high energy spikes, providing protection for the circuit.

Maximum Drain Current (Abs) (ID): 90 A

With a high drain current rating, this FET can handle demanding applications with ease.

No. of Terminals: 8

The 8 terminals provide flexibility for different connection configurations.

Maximum Power Dissipation (Abs): 125 W

The high power dissipation rating ensures stable operation even under heavy loads.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and fast switching speeds.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand harsh environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in various applications.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and reliability in the connections.

Maximum Drain-Source On Resistance: 0.006 ohm

The low on-resistance ensures minimal power loss and high efficiency in the circuit.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and connection options.

Case Connection: DRAIN

The drain case connection simplifies the circuit design and ensures efficient heat dissipation.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this FET can withstand the soldering process without damage.

Technical Specifications

Power Field Effect Transistors (FET) BSC060N10NS3G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

230 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

90 A

Maximum Drain Current (ID):

14.9 A

Maximum Drain-Source On Resistance:

.006 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

360 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC060N10NS3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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