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BSC011N03LSATMA1

Infineon Technologies

BSC011N03LSATMA1 by Infineon Technologies

Infineon BSC011N03LSATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS rating. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power circuits.

Median Price

$0.834

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

1+ parts

$0.556

100+ parts

-

1k+ parts

-

10k+ parts

$0.378

5,000

$0.556

-

-

$0.378

Chip1Stop

Japan . 9,765 parts In-Stock

1+ parts

$0.860

100+ parts

-

1k+ parts

-

10k+ parts

-

9,765

$0.860

-

-

-

Farnell

UK . 6,470 parts In-Stock

1+ parts

$1.940

100+ parts

$0.836

1k+ parts

$0.617

10k+ parts

$0.514

6,470

$1.940

$0.836

$0.617

$0.514

Future Electronics

Canada . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.565

15,000

-

-

-

$0.565

Verical

USA . 9,765 parts In-Stock

1+ parts

-

100+ parts

$0.807

1k+ parts

$0.677

10k+ parts

$0.561

9,765

-

$0.807

$0.677

$0.561

RS (Exports)

UK . 9,370 parts In-Stock

1+ parts

-

100+ parts

$1.655

1k+ parts

$1.262

10k+ parts

$0.999

9,370

-

$1.655

$1.262

$0.999

Element14

Singapore . 6,470 parts In-Stock

1+ parts

-

100+ parts

$1.430

1k+ parts

$1.060

10k+ parts

$0.898

6,470

-

$1.430

$1.060

$0.898

Rochester

USA . 2,638 parts In-Stock

1+ parts

-

100+ parts

$0.748

1k+ parts

$0.621

10k+ parts

$0.553

2,638

-

$0.748

$0.621

$0.553

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 981 parts In-Stock

1+ parts

$0.562

100+ parts

-

1k+ parts

-

10k+ parts

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981

$0.562

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$1.079

100+ parts

-

1k+ parts

-

10k+ parts

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550

$1.079

-

-

-

IBS Electronics

USA . 155,000 parts In-Stock

1+ parts

$1.417

100+ parts

$1.332

1k+ parts

-

10k+ parts

$0.652

155,000

$1.417

$1.332

-

$0.652

Bristol Electronics

USA . 2,912 parts In-Stock

1+ parts

$1.711

100+ parts

$0.633

1k+ parts

$0.445

10k+ parts

-

2,912

$1.711

$0.633

$0.445

-

Chip Stock

USA . 174,000 parts In-Stock

1+ parts

-

100+ parts

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174,000

-

-

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Vyrian

USA . 59,640 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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59,640

-

-

-

-

Rutronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.584

5,000

-

-

-

$0.584

Dan-Mar Components

USA . 2,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,912

-

-

-

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VNN

France . 100 parts In-Stock

1+ parts

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100+ parts

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100

-

-

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Cogito LLC

Ukraine . 20 parts In-Stock

1+ parts

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100+ parts

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20

-

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Prism Electronics

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

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-

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5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 59,762 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

-

10k+ parts

-

59,762

$0.336

-

-

-

Semicontronic

India . 59,754 parts In-Stock

1+ parts

$0.336

100+ parts

$0.328

1k+ parts

$0.326

10k+ parts

-

59,754

$0.336

$0.328

$0.326

-

Corphita

USA . 236 parts In-Stock

1+ parts

$0.533

100+ parts

-

1k+ parts

-

10k+ parts

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236

$0.533

-

-

-

Aztec Data Supply Inc.

USA . 112 parts In-Stock

1+ parts

$0.900

100+ parts

-

1k+ parts

-

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112

$0.900

-

-

-

Argo Parts USA

USA . 722 parts In-Stock

1+ parts

$0.914

100+ parts

-

1k+ parts

-

10k+ parts

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722

$0.914

-

-

-

Modulus Dynamics

Lithuania . 14,571 parts In-Stock

1+ parts

$0.960

100+ parts

$0.922

1k+ parts

$0.883

10k+ parts

-

14,571

$0.960

$0.922

$0.883

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$1.079

100+ parts

-

1k+ parts

-

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50

$1.079

-

-

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.695

100+ parts

$1.611

1k+ parts

$1.611

10k+ parts

-

2,500

$1.695

$1.611

$1.611

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Corohmni

South Africa . 245 parts In-Stock

1+ parts

$1.882

100+ parts

-

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245

$1.882

-

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Microchip USA

USA . 6,834 parts In-Stock

1+ parts

$5.387

100+ parts

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6,834

$5.387

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RC Electronics

USA . 80,976 parts In-Stock

1+ parts

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80,976

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-

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Perfect Parts

USA . 51,583 parts In-Stock

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51,583

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iodParts Technologies Inc.

India . 6,711 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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6,711

-

-

-

-

Continental Prestige Electronics

USA . 6,707 parts In-Stock

1+ parts

-

100+ parts

$0.945

1k+ parts

$0.643

10k+ parts

-

6,707

-

$0.945

$0.643

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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500

-

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

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200

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Lucentia Tech

USA . 200 parts In-Stock

1+ parts

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200

-

-

-

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Overview

Unlock the power of efficient and reliable switching with the BSC011N03LSATMA1 by Infineon Technologies. Designed with precision and expertise, this N-CHANNEL Power Field Effect Transistor offers top-notch quality and performance. Ideal for a variety of applications, this transistor provides seamless operation and enhanced functionality. With a built-in diode and small outline package style, this transistor delivers maximum value and benefits to customers seeking durability and efficiency in their electronic devices. Take your projects to the next level with the BSC011N03LSATMA1 and experience the difference Infineon Technologies can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and high conductivity, making it suitable for various applications.

Minimum DS Breakdown Voltage: 30 V

Can handle high levels of voltage, making it suitable for power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in this function.

Maximum Pulsed Drain Current (IDM): 400 A

Capable of handling high currents, making it suitable for power-intensive applications.

Avalanche Energy Rating (EAS): 190 mJ

Resistant to breakdown under high energy conditions, ensuring reliability in harsh environments.

No. of Terminals: 8

Provides multiple connection points for flexibility in circuit design and integration.

Maximum Drain Current (ID): 37 A

Capable of handling high levels of continuous current, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.0014 ohm

Low on-resistance ensures minimal power loss and efficient performance.

Technical Specifications

Power Field Effect Transistors (FET) BSC011N03LSATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

190 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

37 A

Maximum Drain-Source On Resistance:

.0014 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

400 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC011N03LSATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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