Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.
Median Price
$2.080
Lifecycle Status
Suppliers In-Stock
30
In-Stock Inventory
1k+
Newark
1+ parts
$0.785
100+ parts
1k+ parts
10k+ parts
Farnell
$1.010
$0.820
-
DigiKey
$2.920
$1.305
$0.974
$0.883
Mouser Electronics
$1.270
Arrow
$2.991
$1.337
$1.050
Element14
$4.060
$1.560
$1.300
Verical
Master Electronics
$1.054
$0.917
$0.859
RS (Exports)
$1.356
$1.204
Rochester
$1.200
$0.996
$0.888
Digiode
$0.902
Nova Conductors
$1.275
TME
$2.750
$1.240
$1.180
Forefront Electronics and Design
$2.940
Chip Stock
Vyrian
IBS Electronics
$1.478
$1.286
$1.187
Bristol Electronics
NAC Semi
$4.500
$4.150
NexGen Digital
Jameco Electronics
Semtec, LLC
Sensible Micro Corp
Holdelec - ElecDif-Pro
Micros
$2.079
$2.048
Partservice
$2.008
$1.978
Micros sp.j. W. Kędra i J. Lic
$2.151
$2.119
LIBRA Elektronik GmbH
ACDS - Activité Composants Distribution Service
Prism Electronics
Semicontronic
$0.810
$0.790
$0.786
Ampacity Inc.
Advanced Electronics
$0.832
$0.791
Corohmni
$0.846
Corphita
$0.855
Continental Prestige Electronics
$1.029
Argo Parts USA
Aztec Data Supply Inc.
$1.099
Aranea Global
$1.249
Component Stockers USA
$1.370
$0.930
$0.980
$0.870
Modulus Dynamics
$1.919
Microchip USA
$13.650
Kepictronics
Perfect Parts
Lixinc
TANS Electronics
SupplyDigital Components
Problanco Electronics
Supply Digital
Kulean Microsystems
Eastek
Robosynatics
$1.013
$0.993
Lucentia Tech
Authorized Procurement Solutions
UHIMA Technologies
iodParts Technologies Inc.
Cyclops Electronics Ltd (Excess)
Computer Components Inc. - USA
The use of plastic/epoxy makes this FET lightweight and durable, ideal for applications where weight and durability are important.
P-channel FETs are known for their low on-state resistance and high current-carrying capability, making this product suitable for high-power applications.
The built-in diode allows for easier circuit design and helps protect against reverse voltage spikes, increasing the reliability of the system.
Designed specifically for switching applications, this FET provides fast switching speeds and efficient power handling.
With a high breakdown voltage, this FET can withstand high voltage levels without breakdown, ensuring reliable operation in demanding conditions.
The rectangular shape of the package allows for easy mounting and efficient use of space in the application.
Through-hole terminals provide a secure connection and ease of soldering, ensuring reliable electrical connections.
Enhancement mode FETs offer easy control of the gate voltage, making this product easy to integrate into existing circuit designs.
The high pulsed drain current rating allows for peak power handling capability, making this FET suitable for high current applications.
The high avalanche energy rating ensures that the FET can withstand high energy spikes, enhancing overall system reliability.
With a maximum drain current of 27A, this FET can handle high-current loads with ease, making it suitable for power applications.
The 3-terminal configuration provides ease of connection and flexibility in circuit design.
With a high power dissipation rating, this FET can handle high power levels without overheating, ensuring reliable operation.
The flange mount style allows for easy mounting and secure attachment in the application, reducing the risk of mechanical failure.
The use of metal-oxide semiconductor technology offers high performance and reliability in a compact form factor.
With a high operating temperature range, this FET can operate reliably in high-temperature environments without degradation in performance.
Silicon transistors offer high performance and reliability, making this FET a durable and long-lasting option.
The matte tin terminal finish provides a reliable and corrosion-resistant connection, ensuring long-term performance.
The low drain-source on resistance of 0.07 ohms ensures efficient power handling and minimal power loss in the system.
The single terminal position simplifies connection and allows for easy integration into circuit designs.
Power Field Effect Transistors (FET) FQP27P06 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
FQP27P06 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Postponed Qualification 27/Dec/2022 Wafer Fab Change 27/Sep/2022 Logo 17/Aug/2017
PCN Packaging - Mult Devices 24/Oct/2017 Tape and Box/Reel Barcode Update 07/Aug/2014
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
FDLL4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MC33269T-3.3G
Onsemi
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
1N4148
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
BAV99
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
MBRS140T3G
MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.
ROHM
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
MC7805CTG
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
EU2B-YS303C
Idec
ROTARY SWITCH;
M39029/58-360
Tri-star Electronics International
CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
IRF7413ZTRPBF
Infineon Technologies
Infineon's IRF7413ZTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 100A IDM, 32mJ EAS, and 0.01 ohm RDS(on). With a max temp of 150°C, this MOSFET in GULL WING package is designed for high-power ENHANCEMENT MODE operations.
IRFHS9301TRPBF
Infineon's IRFHS9301TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.037 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with DUAL terminals.
AUIRFR5305TRL
AUIRFR5305TRL by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating. Suitable for automotive use with AEC-Q101 standard compliance.
IPT020N10N3ATMA1
IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
PSMN040-100MSEX
NXP Semiconductors
PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.
IRFR4104TRPBF
IRFR4104TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 42A Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 480A Pulsed Drain Current, and 145mJ Avalanche Energy Rating. Ideal for surface mount designs in power electronics.
G3R75MT12K
Genesic Semiconductor
Power Field-Effect Transistors;
IRLML5203TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BS170
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMP4065S-7
DMP4065S-7 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage and 20A IDM, ideal for switching applications. It operates in enhancement mode, has 0.08 ohm RDS(on), and can handle up to 1.4W power dissipation. With a max temp of 150°C, it's suitable for various electronic designs requiring high-performance MOSFETs.
FDMS86101DC
FDMS86101DC by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 200A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 125W.
JANTX2N6796
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-205AF;
IRFR3410TRPBF
IRFR3410TRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 125A IDM and 140mJ EAS, ideal for SWITCHING applications. With 0.039 ohm RDS(on) and 110W Pd, it operates in ENHANCEMENT MODE at up to 175°C.
IRLML6401
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
FDT434P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 6 A; No. of Terminals: 4;
STW9N150
STMicroelectronics
STW9N150 by STMicroelectronics is a Power FET with 1500V DS Breakdown Voltage, 32A IDM, and 320W Pd. Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode, and operates in ENHANCEMENT MODE.
JANTX2N6796U
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Turn On Time (ton): 105 ns; Maximum Power Dissipation Ambient: 25 W;
IRFP460APBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
IRF3205PBF
IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.
BSC030P03NS3GAUMA1
BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
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FQP27P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
FQP20N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
FQP20N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 170mJ, operating in ENHANCEMENT MODE. With a 0.07 ohm RDS(on), this transistor can handle up to 21A drain current, making it suitable for high-power switching circuits.
FQP27N25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; No. of Elements: 1; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
FQP20N06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; No. of Elements: 1; Transistor Application: SWITCHING;
FQP22N30
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; No. of Terminals: 3; Terminal Position: SINGLE;
FQP24N08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; No. of Terminals: 3; Terminal Form: THROUGH-HOLE;
FQP2N40-F080
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQP2N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB;
FQP2N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain-Source On Resistance: 6.3 ohm; Package Shape: RECTANGULAR;
FQP2N90
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
FQP2P40-F080
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
FQP26N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
FQP20N06LJ69Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
FQP27P06J69Z
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQP27P06_NL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .07 ohm; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
FQP27N25_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Minimum DS Breakdown Voltage: 250 V; JESD-30 Code: R-PSFM-T3;
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