Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FQP24N08 by Onsemi is a Power FET with 80V DS Breakdown Voltage, 96A IDM, and 0.06 ohm RDS. Ideal for switching applications in enhancement mode operation, it features a single configuration with built-in diode. With a max power dissipation of 75W and operating temperature up to 175 °C, this N-channel transistor is suitable for various high-power electronic designs.
Median Price
$0.508
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Rochester
1+ parts
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$0.478
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$0.432
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Digiode
$0.483
DF Sales Co.
$0.950
Chip Stock
Vyrian
Flip Electronics
EMSNET
Corphita
$0.457
Corohmni
Native Components
$7.865
Northwest PG Solutions
$8.651
$7.786
RC Electronics
$0.640
$0.590
$0.570
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Problanco Electronics
Supply Digital
Perfect Parts
TANS Electronics
Kulean Microsystems
SupplyDigital Components
Kepictronics
UHIMA Technologies
Authorized Procurement Solutions
The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.
N-channel FETs typically have lower on-resistance and higher mobility, making them efficient for power switching applications.
The integrated diode simplifies circuit design and protects against reverse voltage, increasing reliability and efficiency.
The high minimum breakdown voltage allows for operation in high voltage applications, providing reliable performance.
Designed specifically for switching applications, ensuring fast and efficient operation in power control circuits.
Enhancement mode transistors require positive gate voltage to turn on, offering precise control over the switching process.
With a high maximum power dissipation rating, this FET can handle significant power levels without overheating, ensuring long-term reliability.
Metal-oxide semiconductor technology offers high electron mobility and low gate leakage, providing efficient performance in power applications.
The low on-resistance of 0.06 ohm results in minimal power loss and higher efficiency during operation.
Power Field Effect Transistors (FET) FQP24N08 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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JESD-609 Code:
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Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
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FQP24N08 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
1N4148
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
1N4148WT
Diodes Incorporated
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
LM358N
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SS14
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
Bytesonic Electronics
Taitron Components
Formosa Microsemi
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
IRFP4668PBF
IRFP4668PBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 520A and EAS of 760mJ, suitable for SWITCHING applications. With 0.0097 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
IRF530PBF-BE3
Vishay Intertechnology
Power Field-Effect Transistors;
IRFR9024NTRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (Abs) (ID): 11 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SQ3427AEEV-T1_GE3
SI7489DP-T1-GE3
Vishay Intertechnology's SI7489DP-T1-GE3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM, 61mJ EAS, and 0.041 ohm Drain-Source On Resistance. Operating in Enhancement Mode, it has a max temp of 150°C and -55°C min temp.
NDT3055
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
IRFR9024PBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
2N7002BKW,115
NXP Semiconductors
2N7002BKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.31A and power dissipation of 0.88W. It operates in enhancement mode, suitable for applications requiring a single configuration such as power management systems or voltage regulators.
IRFR7440TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Minimum Operating Temperature: -55 Cel; Maximum Pulsed Drain Current (IDM): 760 A;
IRLR3110ZTRPBF
IRLR3110ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling up to 250A pulsed drain current. With 0.014 ohm max on-resistance and 175°C max operating temp, it's suitable for high-power systems.
CSD19536KTT
Texas Instruments
CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
BSP315PH6327
Infineon's BSP315PH6327 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 4.68A IDM. Ideal for automotive applications, it features a built-in diode, 0.8 ohm RDS(on), and 24mJ EAS rating. AEC-Q101 compliant, this MOSFET has a small outline package and matte tin finish for enhanced performance in harsh environments.
IRFZ44NSTRL
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
IRF7493TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FQP47P06
FQP47P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 47A Drain Current. Ideal for SWITCHING applications, it features an IDM of 188A, EAS of 820mJ, and 0.026 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 160W at 175°C.
IRFP460LC
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
IRFS4410ZTRLPBF
IRFS4410ZTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 390A IDM, 242mJ EAS, and 0.009 ohm RDS(on). Ideal for SWITCHING applications, this ENHANCEMENT MODE transistor operates at up to 175°C and has a max power dissipation of 230W in a SMALL OUTLINE package.
IRF7413ZTRPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IRF4905STRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Terminal Finish: MATTE TIN OVER NICKEL; Terminal Position: SINGLE;
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FQP27P06
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
FQP20N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
FQP20N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 170mJ, operating in ENHANCEMENT MODE. With a 0.07 ohm RDS(on), this transistor can handle up to 21A drain current, making it suitable for high-power switching circuits.
FQP27N25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; No. of Elements: 1; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
FQP20N06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; No. of Elements: 1; Transistor Application: SWITCHING;
FQP22N30
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; No. of Terminals: 3; Terminal Position: SINGLE;
FQP2N40-F080
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQP2N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB;
FQP2N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain-Source On Resistance: 6.3 ohm; Package Shape: RECTANGULAR;
FQP2N90
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
FQP2P40-F080
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
FQP2N40J69Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
FQP26N03LJ69Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .048 ohm;
FQP20N06LJ69Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
FQP24N08J69Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
FQP24N08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Drain-Source On Resistance: .06 ohm; Maximum Operating Temperature: 175 Cel;
FQP20N06_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 20 A; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE;
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